Search Results - "Elhamri, Said"
-
1
Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas
Published in Applied physics letters (23-12-2019)“…Through magnetotransport measurements and analysis of the observed Shubnikov de-Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting…”
Get full text
Journal Article -
2
Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene
Published in Nature communications (06-01-2015)“…Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic…”
Get full text
Journal Article -
3
Nucleation and quantum confinement of nano-platelet Bi2–Bi2Se3
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2023)“…The nucleation, nano-platelet growth, and optical properties under quantum confinement are investigated in the topological semimetal superlattice Bi2–Bi2Se3 as…”
Get full text
Journal Article -
4
Epitaxial titanium nitride on sapphire: Effects of substrate temperature on microstructure and optical properties
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2018)“…Titanium nitride (TiN) is a mechanically robust, high-temperature stable, metallic material receiving considerable attention for resilient plasmonics. In this…”
Get full text
Journal Article -
5
Approach to multifunctional device platform with epitaxial graphene on transition metal oxide
Published in Scientific reports (23-09-2015)“…Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties and new device concepts not…”
Get full text
Journal Article -
6
Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy grown
Published in Applied physics letters (26-03-2012)“…We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap…”
Get full text
Journal Article -
7
-
8
-
9
Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy
Published in Applied physics letters (27-03-2012)“…We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap…”
Get full text
Journal Article -
10
Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure
Published in Carbon (New York) (01-05-2017)“…The oxide/semiconductor structure is key to controlling current in electronic devices and HfO2 is a common gate material in conventional electronic devices due…”
Get full text
Journal Article -
11
-
12
Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density
Published in Physica Status Solidi. B: Basic Solid State Physics (01-04-2016)“…We investigate the minority carrier lifetime of Be‐doped InAs/InAsSb type‐II superlattices as a function of doping density and temperature using time‐resolved…”
Get full text
Journal Article -
13
Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Published in Japanese Journal of Applied Physics (01-01-2000)“…High quality AlGaN/GaN heterostructures have been grown by rf plasma-assisted molecular beam epitaxy (MBE) on n-type GaN templates grown on sapphire by…”
Get full text
Journal Article -
14
Band gap formation in graphene by in-situ doping
Published in Applied physics letters (16-05-2011)“…We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular…”
Get full text
Journal Article -
15
Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric
Published in Journal of electronic materials (01-10-2015)“…Guanine and poly(methyl methacrylate) (PMMA) layers 60 nm thick were fabricated by physical vapor deposition and spin-coating, respectively, for potential…”
Get full text
Journal Article -
16
Abnormal hopping conduction in semiconducting polycrystalline graphene
Published in Physical review. B, Condensed matter and materials physics (11-07-2013)“…We report the observation of an abnormal carrier transport phenomenon in polycrystalline semiconducting graphene grown by solid carbon source molecular beam…”
Get full text
Journal Article -
17
Zeeman Spin-Splitting in the (010) $\beta$-Ga2O3 Two-Dimensional Electron Gas
Published 06-01-2020“…Appl. Phys. Lett. 115, 262103 (2019) Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010)…”
Get full text
Journal Article -
18
Magnetotransport properties of gallium indium phosphide/gallium arsenide quantum semiconductor heterostructures
Published 01-01-1995“…My dissertation focuses on the study of persistent photoconductivity and interface roughness scattering in the unintentionally doped InGaP/GaAs quantum…”
Get full text
Dissertation -
19
Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells
Published in Applied physics letters (22-08-1994)“…We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated…”
Get full text
Journal Article -
20
Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells
Published in Applied physics letters (19-09-1994)“…Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by…”
Get full text
Journal Article