Search Results - "Elhamri, Said"

Refine Results
  1. 1

    Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas by Neal, Adam T., Zhang, Yuewei, Elhamri, Said, Rajan, Siddharth, Mou, Shin

    Published in Applied physics letters (23-12-2019)
    “…Through magnetotransport measurements and analysis of the observed Shubnikov de-Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting…”
    Get full text
    Journal Article
  2. 2

    Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene by Park, Jeongho, Mitchel, William C., Elhamri, Said, Grazulis, Lawrence, Hoelscher, John, Mahalingam, Krishnamurthy, Hwang, Choongyu, Mo, Sung-Kwan, Lee, Jonghoon

    Published in Nature communications (06-01-2015)
    “…Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic…”
    Get full text
    Journal Article
  3. 3
  4. 4

    Epitaxial titanium nitride on sapphire: Effects of substrate temperature on microstructure and optical properties by Smith, Hadley A., Elhamri, Said, Eyink, Kurt G., Grazulis, Lawrence, Hill, Madelyn J., Back, Tyson C., Urbas, Augustine M., Howe, Brandon M., Reed, Amber N.

    “…Titanium nitride (TiN) is a mechanically robust, high-temperature stable, metallic material receiving considerable attention for resilient plasmonics. In this…”
    Get full text
    Journal Article
  5. 5

    Approach to multifunctional device platform with epitaxial graphene on transition metal oxide by Park, Jeongho, Back, Tyson, Mitchel, William C., Kim, Steve S., Elhamri, Said, Boeckl, John, Fairchild, Steven B., Naik, Rajesh, Voevodin, Andrey A.

    Published in Scientific reports (23-09-2015)
    “…Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties and new device concepts not…”
    Get full text
    Journal Article
  6. 6

    Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy grown by Park, Jeongho, Mitchel, W. C., Back, Tyson C., Elhamri, Said

    Published in Applied physics letters (26-03-2012)
    “…We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap…”
    Get full text
    Journal Article
  7. 7
  8. 8
  9. 9

    Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy by Park, Jeongho, Mitchel, W. C., Elhamri, Said, Back, Tyson C.

    Published in Applied physics letters (27-03-2012)
    “…We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap…”
    Get full text
    Journal Article
  10. 10

    Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure by Park, Jeongho, Back, Tyson, Fairchild, Steven B., Mitchel, William C., Elhamri, Said, Boeckl, John, Martinotti, Dominique, Douillard, Ludovic, Soukiassian, Patrick

    Published in Carbon (New York) (01-05-2017)
    “…The oxide/semiconductor structure is key to controlling current in electronic devices and HfO2 is a common gate material in conventional electronic devices due…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density by Connelly, Blair C., Steenbergen, Elizabeth H., Smith, Howard E., Elhamri, Said, Mitchel, William C., Mou, Shin, Metcalfe, Grace D., Brown, Gail J., Wraback, Michael

    “…We investigate the minority carrier lifetime of Be‐doped InAs/InAsSb type‐II superlattices as a function of doping density and temperature using time‐resolved…”
    Get full text
    Journal Article
  13. 13
  14. 14

    Band gap formation in graphene by in-situ doping by Park, Jeongho, Mitchel, W. C., Brown, Gail J., Elhamri, Said, Grazulis, Lawrence, Smith, Howard E., Pacley, Shanee D., Boeckl, John J., Eyink, Kurt G., Mou, Shin, Tomich, David H., Hoelscher, John E.

    Published in Applied physics letters (16-05-2011)
    “…We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular…”
    Get full text
    Journal Article
  15. 15

    Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric by Williams, Adrienne D., Ouchen, Fahima, Kim, Steve S., Ngo, Yen H., Elhamri, Said, Siwecki, Arthur, Mou, Shin, Campo, Eva M., Kozlowski, Gregory, Naik, Rajesh R., Grote, James

    Published in Journal of electronic materials (01-10-2015)
    “…Guanine and poly(methyl methacrylate) (PMMA) layers 60 nm thick were fabricated by physical vapor deposition and spin-coating, respectively, for potential…”
    Get full text
    Journal Article
  16. 16

    Abnormal hopping conduction in semiconducting polycrystalline graphene by Park, Jeongho, Mitchel, William C., Elhamri, Said, Grazulis, Larry, Altfeder, Igor

    “…We report the observation of an abnormal carrier transport phenomenon in polycrystalline semiconducting graphene grown by solid carbon source molecular beam…”
    Get full text
    Journal Article
  17. 17

    Zeeman Spin-Splitting in the (010) $\beta$-Ga2O3 Two-Dimensional Electron Gas by Neal, Adam T, Zhang, Yuewei, Elhamri, Said, Rajan, Siddharth, Mou, Shin

    Published 06-01-2020
    “…Appl. Phys. Lett. 115, 262103 (2019) Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010)…”
    Get full text
    Journal Article
  18. 18

    Magnetotransport properties of gallium indium phosphide/gallium arsenide quantum semiconductor heterostructures by Elhamri, Said

    Published 01-01-1995
    “…My dissertation focuses on the study of persistent photoconductivity and interface roughness scattering in the unintentionally doped InGaP/GaAs quantum…”
    Get full text
    Dissertation
  19. 19

    Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells by Lo, Ikai, Mitchel, W. C., Kaspi, R., Elhamri, Said, Newrock, R. S.

    Published in Applied physics letters (22-08-1994)
    “…We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated…”
    Get full text
    Journal Article
  20. 20

    Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells by Mitchel, W. C., Brown, G. J., Lo, Ikai, Elhamri, Said, Ahoujja, Mohamed, Ravindran, K., Newrock, R. S., Razeghi, Manijeh, He, Xiaguang

    Published in Applied physics letters (19-09-1994)
    “…Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by…”
    Get full text
    Journal Article