Search Results - "Elhamri, S"

Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection by Haugan, H.J., Brown, G.J., Elhamri, S., Grazulis, L.

“…Authors discuss how anion incorporation was controlled during the epitaxial growth process to develop InAs/GaInSb superlattice (SL) materials for very long…”
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Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices by Steenbergen, E. H., Elhamri, S., Mitchel, W. C., Mou, Shin, Brown, G. J.

“…The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with…”
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Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection by Haugan, H. J., Brown, G. J., Elhamri, S., Mitchel, W. C., Mahalingam, K., Kim, M., Noe, G. T., Ogden, N. E., Kono, J.

“…We explore the optimum growth space for a 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long…”
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Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors by Mitchel, W. C., Elhamri, S., Haugan, H. J., Berney, R., Mou, Shin, Brown, G. J.

“…Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared…”
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Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors by Haugan, H.J., Elhamri, S., Ullrich, B., Szmulowicz, F., Brown, G.J., Mitchel, W.C.

“…The mid-infrared 21 Å InAs/24 Å GaSb superlattices (SLs) designed for the 4 μm cutoff wavelength were grown by molecular beam epitaxy at growth temperatures…”
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Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC by Elhamri, S., Mitchel, W. C., Mitchell, W. D., Landis, G. R., Berney, R., Saxler, A.

“…Transport measurements were used to characterize AlGaN∕AlN∕GaN∕SiC. While the carrier concentration, n=9.2×1012cm−2, remained relatively unchanged from 300…”
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Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates by Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S., Mitchel, W. C.

“…High quality Al0.15Ga0.85N/GaN heterostructures have been fabricated on 6H–SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A…”
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InAs/GaSb type-II superlattices for high performance mid-infrared detectors by Haugan, H.J., Brown, G.J., Szmulowicz, F., Grazulis, L., Mitchel, W.C., Elhamri, S., Mitchell, W.D.

“…The superlattice (SL) design parameters of a 50 period InAs/GaSb SL structure with InSb-like interfaces (IFs) were systematically varied around the 26 Å InAs/…”
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High mobility in n -type GaN substrates by Saxler, A., Look, D. C., Elhamri, S., Sizelove, J., Mitchel, W. C., Sung, C. M., Park, S. S., Lee, K. Y.

“…High peak electron mobilities were observed in freestanding c-plane GaN layers. Two well-defined electrical layers, a low mobility degenerate interface layer,…”
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb by Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Fastenau, J. M., Liu, A. W. K., Elhamri, S., Cellek, O. O., Zhang, Y.-H.

“…Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412ns at 77K under low excitation for a long-wavelength infrared InAs/InAs…”
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Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures by Elhamri, S, Mitchel, W C, Mitchell, W D, Berney, R, Landis, G R

“…Magnetoresistance measurements were performed on van der Pauw shaped AlGaN/GaN heterostructures grown on either sapphire or silicon carbide. These measurements…”
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Calculation of vertical and horizontal mobilities in InAs/GaSb superlattices by Szmulowicz, F., Haugan, H. J., Elhamri, S., Brown, G. J.

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Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures by Lo, Ikai, Tsai, J. K., Tu, Li-Wei, Hsieh, K. Y., Tsai, M. H., Liu, C. S., Huang, J. H., Elhamri, S., Mitchel, W. C., Sheu, J. K.

“…Al 0.35−δ In δ Ga 0.65 N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov–de Haas (SdH)…”
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A magnetotransport study of AlGaN/GaN heterostructures on silicon by Elhamri, S., Mitchel, W. C., Mitchell, W. D., Berney, R., Ahoujja, M., Roberts, J. C., Rajagopal, P., Gehrke, T., Piner, E. L., Linthicum, K. J.

“…Resistivity and Hall effect measurements as functions of temperature and magnetic field have been made on AlGaN/GaN heterostructures grown on silicon…”
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Investigation of strain and stoichiometry of epitaxial titanium nitride on sapphire by Smith, H.A., Elhamri, S., Eyink, K.G., Biegler, Z.J., Adams, R.L., Mahalingam, K., Back, T.C., Urbas, A.M., Reed, A.N.

“…•TiN films grown with varying deposition temperatures are compositionally similar.•Low-angle tilt boundaries observed for all films as strain relaxation…”
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Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation by Haugan, H. J., Elhamri, S., Szmulowicz, F., Ullrich, B., Brown, G. J., Mitchel, W. C.

“…The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the…”
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Transport coefficients of AlGaN/GaN heterostructures by Ahoujja, M., Mitchel, W. C., Elhamri, S., Newrock, R. S., Mast, D. B., Redwing, J. M., Tischler, M. A., Flynn, J. S.

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Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices by Szmulowicz, F., Haugan, H.J., Elhamri, S., Brown, G.J.

“…► Temperature dependence of vertical and horizontal mobilities in InAs/GaSb superlattices was calculated. ► The calculated mobilities are strong functions of…”
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Reprint of "Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices" by Szmulowicz, F., Haugan, H.J., Elhamri, S., Brown, G.J.

“…► Temperature dependence of vertical and horizontal mobilities in InAs/GaSb superlattices was calculated. ► The calculated mobilities are strong functions of…”
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Study of residual background carriers in midinfrared In As ∕ Ga Sb superlattices for uncooled detector operation by Haugan, H. J., Elhamri, S., Szmulowicz, F., Ullrich, B., Brown, G. J., Mitchel, W. C.

“…The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430 ° C in order to study…”
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