Search Results - "El jani, B."

Thermodynamic approach of AlGaN MOVPE growth at atmospheric pressure by Halidou, I., Touré, A., El Jani, B.

“…Al x Ga 1-x N epilayers were grown on GaN/sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure. Different trimethylaluminum…”
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Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy by Essouda, Y., Fitouri, H., Boussaha, R., Elayech, N., Rebey, A., Jani, B. El

“…We report the synthesis of GaAsBi nanowires using Bi as catalyst. Nanoislands of bismuth are grown on GaAs substrates by atmospheric pressure metalorganic…”
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Oxidation of bismuth nanodroplets deposit on GaAs substrate by Fitouri, H., Boussaha, R., Rebey, A., El Jani, B.

“…Bismuth nanodroplets on GaAs substrate were obtained by metalorganic vapor phase epitaxy (MOVPE). New products have been synthesized when Bi nanodroplets are…”
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Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy by Boussaha, R., Fitouri, H., Rebey, A., Jani, B. El

“…•The growth of InAsBi nanoislands by MOVPE is investigated.•The influence of growth temperature on the surface morphologies of InAsBi nanoislands has been…”
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Stress and density of defects in Si-doped GaN by Chine, Z., Rebey, A., Touati, H., Goovaerts, E., Oueslati, M., Jani, B. El, Laugt, S.

“…We report a study by photoluminescence (PL), Raman scattering, and highly resolved X‐ray diffraction (HRXRD) of a series of Si‐doped n‐type GaN layers grown by…”
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AP-MOVPE of thin GaAs1-xBix alloys by FITOURI, H, MOUSSA, I, REBEY, A, FOUZRI, A, EL JANI, B

“…GaAs1-xBix alloy was grown by atmospheric-pressure metalorganic vapour-phase epitaxy using a horizontal reactor. GaAs1-xBix epilayers were elaborated on…”
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High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE by Chaaben, N., Boufaden, T., Fouzri, A., Bergaoui, M.S., Jani, B. El

“…High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as…”
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In situ optical monitoring of the decomposition of GaN thin films by Rebey, A, Boufaden, T, El Jani, B

“…The GaN thermal decomposition versus the annealing ambient (H 2, N 2+H 2, H 2+NH 3), is investigated in an atmospheric pressure metalorganic vapour phase…”
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Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment by Fitouri, H., Benzarti, Z., Halidou, I., Boufaden, T., Jani, B. El

“…We present the simulation of laser reflectance measurements performed during GaN growth by metalorganic vapor phase epitaxy (MOVPE). We used the scattering…”
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Laser-reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: study and simulation by Fitouri, H., Benzarti, Z., Halidou, I., Boufaden, T., Jani, B. El

“…The SiN treatment of the sapphire substrate for GaN growth induces a spectacular effect on the in situ reflectometry monitoring signal. Different growth modes…”
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Surface analysis of different oriented GaAs substrates annealed under bismuth flow by Fitouri, H., Moussa, I., Rebey, A., El Jani, B.

“…Several orientations of GaAs substrates, including (1 0 0), (4 1 1), (1 1 1) and (5 1 1) have been annealed in a metalorganic vapour phase epitaxy (MOVPE)…”
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Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment by Halidou, I, Benzarti, Z, Boufaden, T, El Jani, B, Juillaguet, S, Ramonda, M

“…In this paper, the influence of silane flow on metalorganic vapour phase epitaxy (MOVPE) grown GaN on sapphire substrate by an in situ SiN treatment has been…”
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Effect of growth conditions on the Al composition and optical properties of AlxGa1−xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy by Soltani, S., Bouzidi, M., Chine, Z., Touré, A., Halidou, I., Jani, B. El, Shakfa, M.K.

“…The effect of growth conditions on the Al composition and optical properties of AlxGa1−xN layers grown by atmospheric-pressure metal organic vapor phase…”
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Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements by Benzarti, Z., Khelifi, M., Halidou, I., El Jani, B.

“…GaN films were grown using SiN treatment of sapphire substrate by metalorganic vapor-phase epitaxy in a home-made vertical reactor at atmospheric pressure. The…”
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MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance by Boussaha, R., Fitouri, H., Rebey, A., El Jani, B.

“…InAsBi/InAs heterostructures were elaborated on semi-insulating GaAs substrate by atmospheric pressure metalorganic vapor phase epitaxy. Spectral reflectance…”
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Effect of SiN treatment on GaN epilayer quality by Benzarti, Z., Halidou, I., Boufaden, T., El Jani, B., Juillaguet, S., Ramonda, M.

“…High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire…”
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Statistical analysis of vanadium in gallium arsenide by Rebey, A., Bchetnia, A., Jani, B. El

“…The electrical properties of vanadium‐doped GaAs grown by metalorganic vapor phase epitaxy were studied between 77 and 300 K. The temperature‐dependent…”
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Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55μm by Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.

“…The effect of an applied stationary electric field on the band structure of GaNAsBi/GaAs quantum wells has been investigated using self-consistent calculation…”
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Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy by Bilel, C., Fitouri, H., Zaied, I., Bchetnia, A., Rebey, A., Jani, B. El

“…We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by…”
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Photoreflectance investigation of exciton-acoustic phonon scattering in GaN grown by MOVPE by Bouzidi, M., Soltani, S., Halidou, I., Chine, Z., El Jani, B.

“…In this paper, we report a systematic investigation of the near band edge (NBE) excitonic states in GaN using low temperature photoluminescence (PL) and…”
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