Search Results - "El Husseini, Joanna"

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  1. 1

    Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide by Subirats, Alexandre, Garros, Xavier, El Husseini, Joanna, Vincent, Emmanuel, Reimbold, Gilles, Ghibaudo, Gerard

    Published in IEEE transactions on electron devices (01-02-2015)
    “…In this paper, we revisit the classic single layer defect centric model (DCM), largely used in reliability studies, in the more realistic case of bilayer gate…”
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    Journal Article
  2. 2

    Impact of Single Charge Trapping on the Variability of Ultrascaled Planar and Trigate FDSOI MOSFETs: Experiment Versus Simulation by Subirats, Alexandre, Garros, Xavier, El Husseini, Joanna, Le Royer, Cyrille, Reimbold, Gilles, Ghibaudo, Gerard

    Published in IEEE transactions on electron devices (01-08-2013)
    “…The impact of single charge trapping on the threshold voltage Vt of ultrascaled fully depleted silicon-on-insulator transistors is investigated through dynamic…”
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  3. 3

    A Complete Characterization and Modeling of the BTI-Induced Dynamic Variability of SRAM Arrays in 28-nm FD-SOI Technology by El Husseini, Joanna, Garros, Xavier, Cluzel, Jacques, Subirats, Alexandre, Makosiej, Adam, Weber, Olivier, Thomas, Olivier, Huard, Vincent, Federspiel, Xavier, Reimbold, Gilles

    Published in IEEE transactions on electron devices (01-12-2014)
    “…In this paper, we present for the first time a direct measurement procedure to characterize the bias temperature instability (BTI)-induced dynamic variability…”
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    Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer by Parola, S., Vauthelin, A., Tournet, J., Kret, J., El Husseini, J., Martinez, F., Rouillard, Y., Tournié, E., Cuminal, Y.

    Published in Solar energy materials and solar cells (15-09-2019)
    “…The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context,…”
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