Search Results - "El Gmili, Y."

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber by Arif, M., Elhuni, W., Streque, J., Sundaram, S., Belahsene, S., El Gmili, Y., Jordan, M., Li, X., Patriarche, G., Slaoui, A., Migan, A., Abderrahim, R., Djebbour, Z., Voss, P.L., Salvestrini, J.P., Ougazzaden, A.

“…We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber…”
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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors by Bishop, C., Salvestrini, J. P., Halfaya, Y., Sundaram, S., El Gmili, Y., Pradere, L., Marteau, J. Y., Assouar, M. B., Voss, P. L., Ougazzaden, A.

“…We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm by Li, X., Sundaram, S., Disseix, P., Le Gac, G., Bouchoule, S., Patriarche, G., Réveret, F., Leymarie, J., El Gmili, Y., Moudakir, T., Genty, F., Salvestrini, J-P., Dupuis, R. D., Voss, P. L., Ougazzaden, A.

“…We report on the growth of Al sub(0.57)Ga sub(0.43)N/Al sub(0.38)Ga sub(0.63)N MQWs grown on a relaxed Al sub(0.58)Ga sub(0.42)N buffer on AlN template by…”
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Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE by Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A.

“…AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack…”
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Bandgap energy bowing parameter of strained and relaxed InGaN layers by Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

“…This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal…”
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Observation of the early stages of GaN thermal decomposition at 1200 °C under N2 by Bouazizi, H., Bouzidi, M., Chaaben, N., El Gmili, Y., Salvestrini, J.P., Bchetnia, A.

“…In the early stages, the GaN thermal decomposition under N2 is carried out according to lateral and vertical etching processes. They alternately leaded to…”
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MOVPE grown periodic AlN/BAlN heterostructure with high boron content by Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

“…Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been…”
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Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates by Sundaram, S., El Gmili, Y., Puybaret, R., Li, X., Bonanno, P. L., Pantzas, K., Patriarche, G., Voss, P. L., Salvestrini, J. P., Ougazzaden, A.

“…We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium…”
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm by Li, X, Le Gac, G, Bouchoule, S, El Gmili, Y, Patriarche, G, Sundaram, S, Disseix, P, Reveret, F, Leymarie, J, Streque, J, Genty, F, Salvestrini, J-P, Dupuis, R D, Li, X-H, Voss, P L, Ougazzaden, A

“…10-period Al sub(0.57)Ga sub(0.43)N/Al sub(0.38)Ga sub(0.62)N multi-quantum wells (MQWs) were grown on a relaxed Al sub(0.58)Ga sub(0.42)N buffer on AlN…”
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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates by El Gmili, Y., Bonanno, P. L., Sundaram, S., Li, X., Puybaret, R., Patriarche, G., Pradalier, C., Decobert, J., Voss, P. L., Salvestrini, J-P., Ougazzaden, A.

“…In this paper, we studied the effect of temperature and mask margin size on optical emission and growth rate enhancement (GRE) of InGaN grown by metal organic…”
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Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction by Bonanno, P.L., Gautier, S., Gmili, Y.El, Moudakir, T., Sirenko, A.A., Kazimirov, A., Cai, Z.-H., Martin, J., Goh, W.H., Martinez, A., Ramdane, A., Le Gratiet, L., Maloufi, N., Assouar, M.B., Ougazzaden, A.

“…Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition…”
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire by Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a…”
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Observation of the early stages of GaN thermal decomposition at 1200 °C under N 2 by Bouazizi, H., Bouzidi, M., Chaaben, N., El Gmili, Y., Salvestrini, J.P., Bchetnia, A.

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Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates by Laifi, J., Saidi, C., Chaaben, N., Bchetnia, A., El Gmili, Y., Salvestrini, J.P.

“…The role of the TMG flow rate on the properties of the GaN layer grown by MOVPE on (001) and (11n)/n=2,3 GaAs substrates were investigated. The surface…”
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Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature by Laifi, J., Chaaben, N., El Gmili, Y., Salvestrini, J.P., Bchetnia, A., El Jani, B.

“…The inclusion of cubic phase in MOVPE-grown hexagonal GaN on GaAs substrate and its dependence with the growth temperature are investigated by high-resolution…”
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Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree by Bouazizi, H., Chaaben, N., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.

“…We investigated the partial decomposition of GaN layers grown with different coalescence degrees by atmospheric pressure metal organic vapor phase epitaxy…”
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm by Li, X., Le Gac, G., Bouchoule, S., El Gmili, Y., Patriarche, G., Sundaram, S., Disseix, P., Réveret, F., Leymarie, J., Streque, J., Genty, F., Salvestrini, J-P., Dupuis, R.D., Li, X.-H., Voss, P.L., Ougazzaden, A.

“…10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading…”
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