Search Results - "Eizenberg, M"

Intrinsic electron traps in atomic-layer deposited HfO2 insulators by Cerbu, F., Madia, O., Andreev, D. V., Fadida, S., Eizenberg, M., Breuil, L., Lisoni, J. G., Kittl, J. A., Strand, J., Shluger, A. L., Afanas'ev, V. V., Houssa, M., Stesmans, A.

“…Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the…”
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Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests by FISHER, I, EIZENBERG, M

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Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks by Palumbo, F., Shekhter, P., Cohen Weinfeld, K., Eizenberg, M.

“…In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the…”
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Non-life threatening disorders (NLTDs): attitudes toward Autistic Spectrum Disorders (ASDs) among students of allied health professions by Simonstein, F, Mashiach-Eizenberg, M

“…Highlights • Health care professionals may determine access to health care of people with ASDs. • Negative attitude of HCP may expose people with ASDs to…”
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Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks by Palumbo, F., Winter, R., Krylov, I., Eizenberg, M.

“…The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the…”
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Band offsets determination and interfacial chemical properties of the Al2O3/GaSb system by Geppert, I., Eizenberg, M., Ali, A., Datta, S.

“…Band offsets of the Al2O3/GaSb system and various surface passivation treatments of the GaSb substrate by HCl, NH4OH, and (NH4)2S solutions were investigated…”
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The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack by Winter, R, Krylov, I, Ahn, J, McIntyre, P C, Eizenberg, M

“…The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/ InGaAs gate stacks was investigated. Using a systematic method for…”
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The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric by Shekhter, P., Chaudhuri, A. R., Laha, A., Yehezkel, S., Shriki, A., Osten, H. J., Eizenberg, M.

“…One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of…”
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Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs by Palumbo, F., Shekhter, P., Eizenberg, M.

“…•We examine the post breakdown characteristics of metal gate/Al2O3/InGaAs.•It is observed resistive switching (RS) effect.•The oxide-substrate interface is…”
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The contribution of grain boundary scattering versus surface scattering to the resistivity of thin polycrystalline films by Marom, H., Ritterband, M., Eizenberg, M.

“…Materials with nanometric dimensions exhibit higher electrical resistivity due to additional scattering centers for the conduction electrons, mainly from…”
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Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization by Kohn, A., Eizenberg, M., Shacham-Diamand, Y., Sverdlov, Y.

“…Thin Co(W,P) films, 100–200 nm thick, were electroless deposited on oxidized silicon wafers using sputtered copper or cobalt as catalytic seed layers. The…”
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Resistive switching effect on Al2O3/InGaAs stacks by Palumbo, F., Shekhter, P., Krylov, I., Ritter, D., Eizenberg, M.

“…[Display omitted] •We examine the post breakdown characteristics of metal gate/Al2O3/InGaAs.•It is observed resistive switching (RS) effect.•The…”
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Band alignment of Hf―Zr oxides on Al2O3/GeO2/Ge stacks by FADIDA, S, EIZENBERG, M, NYNS, L, VAN ELSHOCHT, S, CAYMAX, M

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FTIR and ellipsometry characterization of ultra-thin ALD TaN films by Wu, Y.Y., Eizenberg, M.

“…In this paper, Fourier-transform infrared (FTIR) spectroscopy and ellipsometric spectroscopy were used to characterize the optical properties of atomic…”
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Compositional dependence of work function and Fermi level position of the HfNx/SiO2 system by ROTHSCHILD, J. A, EIZENBERG, M

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Ultraviolet-oxidized mercaptan-terminated organosilane nanolayers as diffusion barriers at Cu-silica interfaces by Gandhi, D. D., Tisch, U., Singh, B., Eizenberg, M., Ramanath, G.

“…We demonstrate the use of UV-exposed molecular nanolayers (MNLs) of 3-mercaptan-propyl-trimethoxysilane to inhibit copper-transport across Cu–SiO2 interfaces…”
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The role of microstructure in nanocrystalline conformal Co0.9W0.02P0.08 diffusion barriers for copper metallization by Kohn, A., Eizenberg, M., Shacham-Diamand, Y.

“…Electroless deposition of diffusion barriers for Cu metallization is an attractive process as it is selective, deposits conformal films at a low temperature…”
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Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization by Kohn, A., Eizenberg, M., Shacham-Diamand, Y., Israel, B., Sverdlov, Y.

“…Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures…”
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Effects of thermal treatment on structures of Cu/atomic-layer-deposited TaN films/Si stacks by Wu, Y.Y., Eizenberg, M.

“…Atomic layer deposition (ALD) TaN films are designed as diffusion barriers for Cu metallization of silicon devices. In a previous paper, we characterized the…”
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Copper-related degradation of SiO2 in metal–oxide–semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer by Kohn, A., Lipp, E., Eizenberg, M., Shacham-Diamand, Y.

“…We describe a mechanism of Cu-related degradation of SiO2 in metal–oxide–semiconductor capacitors subjected to bias thermal stress (BTS). The commonly used…”
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