Search Results - "Eiting, J"

GaN avalanche photodiodes by Carrano, J. C., Lambert, D. J. H., Eiting, C. J., Collins, C. J., Li, T., Wang, S., Yang, B., Beck, A. L., Dupuis, R. D., Campbell, J. C.

“…We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The…”
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Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition by Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Lambert, D. J. H., Eiting, C. J., Dupuis, R. D.

“…Defects were observed in GaN:Mg grown on sapphire substrates using metal–organic chemical-vapor deposition (MOCVD) with Mg-delta doping similar to those…”
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Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition by Park, J., Grudowski, P. A., Eiting, C. J., Dupuis, R. D.

“…We describe the characteristics of single-crystal GaN regions obtained by selective-area and subsequent lateral epitaxial overgrowth using metal organic…”
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Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors by Carrano, J. C., Li, T., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

“…We report on the current transport mechanisms dominant at the Schottky interface of metal–semiconductor–metal photodetectors fabricated on single-crystal GaN,…”
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Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers by Carrano, J. C., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

“…We report a very low dark current (∼57 pA at 10 V reverse bias) metal–semiconductor–metal photodetectors fabricated on GaN epitaxial layers grown by…”
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Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN by Carrano, J. C., Li, T., Brown, D. L., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

“…We report on the temporal and the frequency response of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN. The best devices…”
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Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition by Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Wong, M. M., Dupuis, R. D., Liliental-Weber, Z., Benamara, M.

“…GaN epitaxial layers with different crystalline quality grown on sapphire substrates by metalorganic chemical vapor deposition are investigated using…”
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Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure by Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T.-G., Dupuis, R. D.

“…We have studied the low-temperature (4 K) photoluminescence (PL) of a modulation-doped Al0.37Ga0.63N/GaN single heterostructure. Radiative recombination is…”
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Very high-speed ultraviolet photodetectors fabricated on GaN by Carrano, J. C., Li, T., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

“…We report on the temporal and the frequency response of both metal-semiconductor-metal (MSM) and p-i-n ultraviolet photodetectors fabricated on single-crystal…”
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The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition by Grudowski, P. A., Holmes, A. L., Eiting, C. J., Dupuis, R. D.

“…We report the growth and photoluminescence (300 and 4.2 K) characterization of unintentionally doped GaN on both exact and vicinal (0001) sapphire substrates…”
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Activation studies of low-dose Si implants in gallium nitride by Eiting, C. J., Grudowski, P. A., Dupuis, R. D., Hsia, H., Tang, Z., Becher, D., Kuo, H., Stillman, G. E., Feng, M.

“…The implantation of Si ions into undoped high-resistivity GaN films is of interest for the realization of high-performance digital and monolithic microwave…”
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Demonstration of a radiation resistant, high efficiency SiC betavoltaic by Eiting, C. J., Krishnamoorthy, V., Rodgers, S., George, T., Robertson, J. David, Brockman, John

“…A SiC p - i - n junction betavoltaic was fabricated, and electrical power output under irradiation from an 8.5 GBq P 33 source was monitored over a period of…”
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Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition by Grudowski, P. A., Eiting, C. J., Park, J., Shelton, B. S., Lambert, D. J. H., Dupuis, R. D.

“…We report the growth and characterization of InGaN heteroepitaxial thin films and quantum-well heterostructures on (0001) sapphire substrates. The III-N…”
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Influence of Dopants on Defect Formation in GaN by Liliental-Weber, Z., Jasinski, J., Benamara, M., Grzegory, I., Porowski, S., Lampert, D.J.H., Eiting, C.J., Dupuis, R.D.

“…The influence of p‐dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be…”
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Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN by Shiojima, Kenji, McInturff, David T., Woodall, Jerry M., Grudowski, Paul A., Eiting, Christopher J., Dupuis, Russ D.

“…A comprehensive annealing study of W, WSiN, and Nb refractory contacts to both p- and n-GaN was performed. Samples were examined by current-voltage (I-V)…”
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The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD by Grudowski, P. A., Holmes, A. L., Eiting, C. J., Dupuis, R. D.

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P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition by Eiting, C. J., Grudowski, P. A., Dupuis, R. D.

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Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition by Dupuis, R.D., Park, J., Grudowski, P.A., Eiting, C.J., Liliental-Weber, Z.

“…We describe the characteristics of single-crystal GaN regions obtained by selective-area and subsequent lateral epitaxial overgrowth using metalorganic…”
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Activation of silicon ion-implanted gallium nitride by furnace annealing by Dupuis, R. D., Eiting, C. J., Grudowski, P. A., Hsia, H., Tang, Z., Becher, D., Kuo, H., Stillman, G. E., Feng, M.

“…Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated…”
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Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition by HO KI KWON, EITING, C. J, LAMBERT, D. J. H, SHELTON, B. S, WONG, M. M, ZHU, T. G, DUPUIS, R. D

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