Search Results - "Eitan, Boaz"

Unified retention model for localized charge trapping nonvolatile memory device by Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz

“…Retention after cycling in an NROM nonvolatile memory cell is investigated. Electrical characterizations combined with two-dimensional simulations were…”
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Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device by Lusky, Eli, Shacham-Diamand, Yosi, Shappir, Assaf, Bloom, Ilan, Eitan, Boaz

“…A spectroscopy method is proposed and implemented for Si3Ni4 layer using the NROM® cell and the gate-induced-drain-leakage measurement. The proposed method…”
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Spatial characterization of localized charge trapping and charge redistribution in the NROM device by Shappir, Assaf, Levy, David, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz

“…This paper discusses the spatial characterization and redistribution of hot carriers injected into the gate dielectric stack of the NROM localized charge…”
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Lateral charge transport in the nitride layer of the NROM non-volatile memory device by Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz

“…NROM is a two bits per cell, localized charge trapping non-volatile memory device. A unique erase state threshold voltage drift in the NROM cell is presented…”
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NROMTM––a new technology for non-volatile memory products by Bloom, Ilan, Pavan, Paolo, Eitan, Boaz

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UV surface disinfection in a wearable drug delivery device by Zrehen, Adam, Hili, Uri, Weil, Noam, Ben-David, Ori, Yosef, Andrei, Eitan, Boaz

“…The advent of recombinant DNA technology fundamentally altered the drug discovery landscape, replacing traditional small-molecule drugs with protein and…”
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NROM: A novel localized trapping, 2-bit nonvolatile memory cell by Eitan, B., Pavan, P., Bloom, I., Aloni, E., Frommer, A., Finzi, D.

“…This paper presents a novel flash memory cell based on localized charge trapping in a dielectric layer and on a new read operation. It is based on the storage…”
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Characterization of channel hot electron injection by the subthreshold slope of NROM[trademark] device by Lusky, E, Shacham-Diamand, Y, Bloom, I, Eitan, B

“…Channel hot electron (CHE) injection, is widely used as main programming method in flash products. The spatial distribution could only be measured indirectly…”
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Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric by Lusky, E., Shacham-Diamand, Y., Bloom, I., Eitan, B.

“…An electrons retention model for localized charge, trapped in ONO stacked dielectric, is introduced utilizing the nitride read-only memory (NROM) device. The…”
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Unified retention model for localized charge trapping nonvolatilememory device by Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz

“…Retention after cycling in an NROM nonvolatile memory cell is investigated. Electrical characterizations combined with two-dimensional simulations were…”
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Investigation of channel hot electron injection by localized charge-trapping nonvolatile memory devices by Lusky, E., Shacham-Diamand, Y., Mitenberg, G., Shappir, A., Bloom, I., Eitan, B.

“…A novel measurement method to extract the spatial distribution of channel hot electron injection is described. The method is based on characterization of…”
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On the physical mechanism of the NROM memory erase by Larcher, L., Pavan, P., Eitan, B.

“…The purpose of this paper is to investigate the physical mechanism of NROM memory erase. Three conduction mechanisms potentially responsible of NROM erase will…”
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Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells by Larcher, L., Verzellesi, G., Pavan, P., Lusky, E., Bloom, I., Eitan, B.

“…The aim of this paper is to achieve a correct description of the programming charge distribution in NROM memory devices. This is essential to prove device…”
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Relaxation of localized charge in trapping-based nonvolatile memory devices by Janai, M., Shappir, A., Bloom, I., Eitan, B.

“…Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster…”
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Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices by Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz

“…An analytical model is presented for the subthreshold slope degradation of localized-charge-trapping based non-volatile memory devices. The model incorporates…”
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NROM TM––a new technology for non-volatile memory products by Bloom, Ilan, Pavan, Paolo, Eitan, Boaz

“…NROM TM––is a new technology for non-volatile memories (NVMs); it offers three major improvements relative to the Floating Gate technology: one technology for…”
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Hot carrier effects in FLASH by Eitan, Boaz

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NROM™ — a new non-volatile memory technology: from device to products by Bloom, Ilan, Pavan, Paolo, Eitan, Boaz

“…NROM™ — a new NVM technology has recently been introduced, enabling three major improvements relative to the floating gate technology: one technology for all…”
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Read Disturb in NROM Charge Trapping Non-Volatile Memory Device by Shainsky, N., Bloom, I., Shacham, Y., Eitan, B.

“…We investigated threshold voltage (V T ) shifts during read operation of NROM devices in advanced non-volatile memory (NVM) process generations (75nm). For the…”
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The kinetics of degradation of data retention of post-cycled NROM non-volatile memory products by Janai, M., Eitan, B.

“…The kinetics of degradation of the threshold voltage of post-cycled NROM products is investigated. The root cause of the threshold voltage drift is attributed…”
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