Charge Loss Mechanisms in a Localized Trapping Based Nonvolatile Memory Device

In this work, quantification of the theories and models attributed to the NROM cell V t decay and the dominant charge loss mechanism dictating this phenomenon are discussed. The main objective is to determine whether the transport of the localized trapped charge is mainly lateral within the nitride...

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Bibliographic Details

Published in:	2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel pp. 364 - 365
Main Authors:	Yael Shur, Shacham-Diamand, Y., Lusky, E., Eitair, B., Shappir, A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-11-2006
Subjects:	Dielectrics Electron traps FETs Hot carrier injection Nonvolatile memory Silicon Solid state circuits Substrates Temperature Threshold voltage
Online Access:	Get full text
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