Search Results - "Eikyu, K."

Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport by Nishimura, T., Eikyu, K., Sonoda, K., Ogata, T.

“…SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put into practical use. However, its stress…”
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Multi-trench-gate Cell Concept for Low Voltage Superjunction Power MOSFETs by Eikyu, K., Sakai, A., Yamashita, T., Shimomura, A., Yanagigawa, H., Mori, K.

“…Multi-trench-gate (multi-TG) cell concept is proposed for below 60V class superjunction (SJ) power MOSFETs. The proposed SJ cell improves manufacturability by…”
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Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis by Tanizawa, M, Ohbayashi, S, Okagaki, T, Sonoda, K, Eikyu, K, Hirano, Y, Ishikawa, K, Tsuchiya, O, Inoue, Y

“…A statistical compact RTN (Random Telegraph Noise) model with a fixed V th shift and V gs dependent trap time constants is proposed. It accurately reproduces…”
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Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation by Nishimura, T., Eikyu, K., Sonoda, K., Ogata, T.

“…•The stress response of the drift velocity of 4H-SiC is analyzed by FMBC simulation.•In low electric field the drift velocity depends on the curvature at…”
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Test structure measuring inter- and intralayer coupling capacitance of interconnection with subfemtofarad resolution by Kunikiyo, T., Watanabe, T., Kanamoto, T., Asazato, H., Shirota, M., Eikyu, K., Ajioka, Y., Makino, H., Ishikawa, K., Iwade, S., Inoue, Y.

“…We present a new test structure measuring inter- and intralayer coupling capacitance parasitic to the same target interconnection with subfemtofarad…”
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Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs by Matsumoto, T., Maeda, S., Hirano, Y., Eikyu, K., Yamaguchi, Y., Maegawa, S., Inuishi, M., Nishimura, T.

“…We point out for the first time that floating-body effects cause the reduction of the saturation drive current in partially depleted (PD) SOI MOSFETs. It is…”
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A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films by Sakakibara, K., Ajika, N., Eikyu, K., Ishikawa, K., Miyoshi, H.

“…In the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress, three reproducible stress-induced leakage current (SILC) components have been…”
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Study on the improved short-circuit behavior of narrow mesa Si-IGBTs with emitter connected trenches by Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y.

“…The impacts of the self-heating and autonomous hole supply adjustment on the short-circuit (SC) behavior of narrow mesa Si-IGBTs are investigated. As reported…”
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Threshold Voltage Modulation Using \hbox^ Implantation Into Substrate for Ni Fully Silicided Gate/High- k NMOS by Yamashita, T., Nishida, Y., Eikyu, K., Oda, H., Inoue, Y., Shibahara, K.

“…The significance of controlling threshold voltage using nitrogen molecule ion (N 2 + ) implantation into a silicon substrate was demonstrated for an n-channel…”
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Threshold Voltage Modulation Using [Formula Omitted] Implantation Into Substrate for Ni Fully Silicided Gate/High-[Formula Omitted] NMOS by Yamashita, T, Nishida, Y, Eikyu, K, Oda, H, Inoue, Y, Shibahara, K

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Threshold Voltage Modulation Using hbox N 2 + Implantation Into Substrate for Ni Fully Silicided Gate/High- k NMOS by Yamashita, T, Nishida, Y, Eikyu, K, Oda, H, Inoue, Y, Shibahara, K

“…The significance of controlling threshold voltage using nitrogen molecule ion (N sub(2) super(+)) implantation into a silicon substrate was demonstrated for an…”
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Impact of Shear Strain and Quantum Confinement on \langle\hbox\rangle Channel nMOSFET With High-Stress CESL by Takashino, H., Okagaki, T., Uchida, T., Hayashi, T., Tanizawa, M., Tsukuda, E., Eikyu, K., Wakahara, S., Ishikawa, K., Tsuchiya, O., Inoue, Y.

“…In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator…”
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Impact of Shear Strain and Quantum Confinement on langlehbox{110}rangle Channel nMOSFET With High-Stress CESL by Takashino, H, Okagaki, T, Uchida, T, Hayashi, T, Tanizawa, M, Tsukuda, E, Eikyu, K, Wakahara, S, Ishikawa, K, Tsuchiya, O, Inoue, Y

“…In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator…”
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Impact of Shear Strain and Quantum Confinement on langlehbox 110 rangle Channel nMOSFET With High-Stress CESL by Takashino, H, Okagaki, T, Uchida, T, Hayashi, T, Tanizawa, M, Tsukuda, E, Eikyu, K, Wakahara, S, Ishikawa, K, Tsuchiya, O, Inoue, Y

“…In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator…”
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2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide by Eikyu, K., Sakakibara, K., Ishikawa, K., Nishimura, T.

“…Two-dimensional effect of trapped electrons on device characteristics are calculated using a two-dimensional device simulator including a trap-filling current…”
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Impact of Shear Strain and Quantum Confinement on (110) Channel nMOSFET With High-Stress CESL by TAKASHINO, Hiroyuki, OKAGAKI, Takeshi, INOUE, Yasuo, UCHIDA, Tetsuya, HAYASHI, Takashi, TANIZAWA, Motoaki, TSUKUDA, Eiji, EIKYU, Katsumi, WAKAHARA, Shoji, ISHIKAWA, Kiyoshi, TSUCHIYA, Osamu

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Non-destructive inverse modeling of copper interconnect structure for 90nm technology node by Kunikiyo, T., Watanabe, T., Kanamoto, T., Asazato, H., Shirota, M., Eikyu, K., Ajioka, Y., Makino, H., Ishikawa, K., Iwade, S., Inoue, Y., Yamashita, K., Kobayashi, M., Gohda, A., Oda, Y., Yamaguchi, R., Umimoto, H., Ohtani, K.

“…We propose non-destructive inverse modeling of copper interconnect cross-sectional structures, which reproduces the pitch dependence of intraand interlayer…”
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Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors by Eikyu, K., Takashino, H., Kidera, M., Teramoto, A., Umeda, H., Ishikawa, K., Kotani, N., Inuishi, M.

“…The physical oxide thickness of ultrathin oxides is extracted using the tunneling current characteristics of MOS capacitors. An extraction tool has been…”
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Dopant redistribution during gate oxidation including transient enhanced diffusion in oxidizing ambient by Uchida, T., Eikyu, K., Fujinaga, M., Teramoto, A., Miyoshi, H.

“…Dopant redistribution during gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to oxidation occur…”
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Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 /spl mu/m partially depleted SOI MOSFETs by Matsumoto, T., Maeda, S., Hirano, Y., Eikyu, K., Yamaguchi, Y., Maegawa, S., Inuishi, M., Nishimura, T.

“…We point out for the first time that floating-body effects cause the reduction of the saturation drive current in partially depleted (PD) Sol MOSFETs. It is…”
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