Optimization of Stress Memorization Technique for 45 nm Complementary Metal–Oxide–Semiconductor Technology

Optimization of Stress Memorization Technique for 45 nm Complementary Metal–Oxide–Semiconductor Technology

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 48; no. 3R; p. 31203
Main Authors: Morifuji, Eiji, Eiho, Ayumi, Sanuki, Tomoya, Iwai, Masaaki, Matsuoka, Fumitomo
Format: Journal Article
Language:English
Published: 01-03-2009
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.48.031203