Search Results - "Eftychis, S."

Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy by Eftychis, S., Kruse, J.E., Tsagaraki, K., Koukoula, T., Kehagias, Th, Komninou, Ph, Georgakilas, A.

“…•Slight variations in ultrathin AlN prelayers result in drastic GaN NW changes.•Increasing the AlN nominal thickness between 0 and 0.5 nm, doubles NW…”
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Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires by Eftychis, S., Kruse, J., Koukoula, T., Kehagias, Th, Komninou, Ph, Adikimenakis, A., Tsagaraki, K., Androulidaki, M., Tzanetakis, P., Iliopoulos, E., Georgakilas, A.

“…The effects of an amorphous interfacial silicon nitride (SiXNY) layer on the morphology, structure and optoelectronic properties of GaN nanowires (NWs), grown…”
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