Search Results - "Efremov, M. A."

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  1. 1

    Sufficient condition for a quantum state to be genuinely quantum non-Gaussian by Happ, L, Efremov, M A, Nha, H, Schleich, W P

    Published in New journal of physics (20-02-2018)
    “…We show that the expectation value of the operator  ˆ exp ( − c x ˆ 2 ) + exp ( − c p ˆ 2 ) defined by the position and momentum operators x ˆ and p ˆ with a…”
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  2. 2

    Representation-free description of atom interferometers in time-dependent linear potentials by Zimmermann, M, Efremov, M A, Zeller, W, Schleich, W P, Davis, J P, Narducci, F A

    Published in New journal of physics (18-07-2019)
    “…In this article we present a new representation-free formalism, which can significantly simplify the analysis of interferometers comprised of atoms moving in…”
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  3. 3

    Synthesis of Electromagnetic Pulses with Different Frequency Bands in Free Space by Efremov, A. M., Koshelev, V. I., Plisko, V. V.

    “…The synthesis of electromagnetic pulses with an extended spectrum is studied using summation of radiation pulses with different frequency bands in free space…”
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  4. 4

    T3 Stern-Gerlach Matter-Wave Interferometer by Amit, O, Margalit, Y, Dobkowski, O, Zhou, Z, Japha, Y, Zimmermann, M, Efremov, M A, Narducci, F A, Rasel, E M, Schleich, W P, Folman, R

    Published in Physical review letters (23-08-2019)
    “…We present a unique matter-wave interferometer whose phase scales with the cube of the time the atom spends in the interferometer. Our scheme is based on a…”
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    Observation of nonspreading wave packets in an imaginary potential by Stützle, R, Göbel, M C, Hörner, Th, Kierig, E, Mourachko, I, Oberthaler, M K, Efremov, M A, Fedorov, M V, Yakovlev, V P, van Leeuwen, K A H, Schleich, W P

    Published in Physical review letters (09-09-2005)
    “…We propose and experimentally demonstrate a method to prepare a nonspreading atomic wave packet. Our technique relies on a spatially modulated absorption…”
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  7. 7

    On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma by EFREMOV, A. M, KIM, Gwan-Ha, KIM, Jong-Gyu, BOGOMOLOV, A. V, KIM, Chang-Il

    Published in Microelectronic engineering (2007)
    “…This work reports the results on the influence of gas mixing ratio, gas pressure (0.26-3.3Pa) and input power (400-900W) on the Cl2/Ar plasma parameters in the…”
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  8. 8

    Four-Channel Former of Bipolar Pulses of Various Durations in a Circuit with One Spark Gap by Efremov, A. M., Alexeenko, V. M.

    Published in Russian physics journal (01-12-2023)
    “…A four-channel bipolar pulse former with an amplitude of up to 80 kV, a duration of 1 ns (2 channels) and 2 ns (2 channels) and a repetition rate of 100 Hz at…”
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  9. 9

    Melatonin and its bioisosteres as potential therapeutic agents for the treatment of retinopathy of prematurity by Osipova, N. A., Panova, A. Y., Efremov, A. M., Lozinskaya, N. A., Beznos, O. V., Katargina, L. A.

    Published in Chemical biology & drug design (01-03-2024)
    “…We conducted a study on the impact of intraperitoneal injections of melatonin and its three bioisosteres (compounds 1–3) on the development of oxygen‐induced…”
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  10. 10

    A low-impedance high-voltage bipolar pulse former by Efremov, A. M.

    “…The results on the formation of bipolar pulses with amplitudes of up to 100 kV, a duration of 2 ns, and a pulse repetition rate of 100 Hz across a 12.5-Ω load…”
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  11. 11

    Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma by Efremov, A. M., Kwon, K.-H.

    Published in Russian microelectronics (01-12-2022)
    “…The electrophysical parameters of plasma, concentrations of fluorine atoms, and kinetics of reactive-ion heterogeneous processes in the CF 4 + C 4 F 8 + Ar +…”
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  12. 12

    The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma by Efremov, A. M., Smirnov, S. A., Betelin, V. B.

    Published in Russian microelectronics (01-10-2023)
    “…A comparative study of the effect of small (up to 20%) substituting additives F 2 , H 2 , and HF on the kinetics and stationary concentrations of neutral…”
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  13. 13

    Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio by Miakonkikh, A. V., Kuzmenko, V. O., Efremov, A. M., Rudenko, K. V.

    Published in Russian microelectronics (01-02-2024)
    “…The electrophysical parameters of the plasma and the kinetics of plasma-chemical processes in a CF 4 + H 2 + Ar mixture while varying the CF 4 /H 2 ratio are…”
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    Excitation Pulse Selection for UWB Antenna by Andreev, Yu. A., Efremov, A. M., Plisko, V. V.

    Published in Russian physics journal (01-12-2023)
    “…The paper studies the influence of the voltage pulse waveform exciting the UWB antenna, on the radiated E-field amplitude. It is shown that the radiated pulse…”
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  16. 16

    Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures by Efremov, A. M., Bobylev, A. V., Kwon, K.-H.

    Published in Russian microelectronics (01-08-2023)
    “…A comparative study of the electrophysical parameters of the plasma, the fluorine atom concentrations, and the kinetics of reactive-ion etching of silicon in…”
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  17. 17

    Kinetics of Reactive Ion Etching of Si, SiO2, and Si3N4 in C4F8 + O2 + Ar Plasma: Effect of the C4F8/O2 Mixing Ratio by Efremov, A. M., Kwon, K.-H.

    Published in Russian microelectronics (01-03-2021)
    “…The kinetics of reactive ion etching of an Si, SiO 2 , and Si 3 N 4 in the C 4 F 8 + O 2 + Ar mixture with a varied C 4 F 8 /O 2 mixing ratio under the…”
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  18. 18

    A High-Power Source of Ultrawideband Radiation of Subnanosecond Duration with Controllable Characteristics by Balzovsky, E. V., Buyanov, Yu. I., Efremov, A. M., Koshelev, V. I., Nekrasov, E. S., Smirnov, S. S.

    “…A high-power source of ultrawideband radiation of subnanosecond duration based on a hybrid antenna with an offset reflector has been developed. At the focus of…”
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  19. 19

    Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture by Efremov, A. M., Betelin, V. B., Kwon, K.-H.

    Published in Russian microelectronics (01-04-2023)
    “…The parameters of the gas phase and the kinetics of reactive ion etching of SiO 2 and Si 3 N 4 under conditions of an induction RF (13.56 MHz) discharge with a…”
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  20. 20

    On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma by Amirov, I. I., Izyumov, M. O., Efremov, A. M.

    Published in Russian microelectronics (2022)
    “…The effect of the initial composition of the Cl 2 + O 2 + Ar mixture on the electrical parameters of a plasma and stationary concentrations of atomic particles…”
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