Search Results - "Edwall, D."

High-Operating Temperature HgCdTe: A Vision for the Near Future by Lee, D., Carmody, M., Piquette, E., Dreiske, P., Chen, A., Yulius, A., Edwall, D., Bhargava, S., Zandian, M., Tennant, W. E.

“…We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer…”
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Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures by Shojaei, B., Wang, S., Gruenewald, J., Ellsworth, J., Edwall, D., Daraselia, M., Dreiske, M., Edirisooriya, M., Yulius, A., Carmody, M.

“…An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for…”
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Small-Pitch HgCdTe Photodetectors by Tennant, W. E., Gulbransen, D. J., Roll, A., Carmody, M., Edwall, D., Julius, A., Dreiske, P., Chen, A., McLevige, W., Freeman, S., Lee, D., Cooper, D. E., Piquette, E.

“…If we can make wavelength-sized detectors, we approach the limit at which smaller detectors have no further advantage for imaging focal plane arrays with…”
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Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates by Carmody, M., Yulius, A., Edwall, D., Lee, D., Piquette, E., Jacobs, R., Benson, D., Stoltz, A., Markunas, J., Almeida, A., Arias, J.

“…Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of…”
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Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates by Maloney, P.G., DeWames, R., Pellegrino, J.G., Billman, C., Arias, J.M., Edwall, D.D., Lee, D., Khurgin, J.

“…This paper correlates measurements of minority carrier lifetime using photoconductivity transient or photoconductive decay (PCD) with measurements and analysis…”
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Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy by Piquette, E.C., Edwall, D.D., Arnold, H., Chen, A., Auyeung, J.

“…Removal of the CdZnTe substrate offers several performance benefits for near-infrared (NIR, 1.7  μ m) and short-wave infrared (SWIR, 2.5  μ m) focal-plane…”
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Model for minority carrier lifetimes in doped HgCdTe by KRISHNAMURTHY, S, BERDING, M. A, YU, Z. G, SWARTZ, C. H, MYERS, T. H, EDWALL, D. D, DEWAMES, R

“…We calculate the radiative, Auger, and the Shockley-Read-Hall recombination rates with Fermi-Dirac statistics and accurate band structures to explain the…”
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Status of LWIR HgCdTe-on-Silicon FPA Technology by Carmody, M., Pasko, J.G., Edwall, D., Piquette, E., Kangas, M., Freeman, S., Arias, J., Jacobs, R., Mason, W., Stoltz, A., Chen, Y., Dhar, N.K.

“…The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of…”
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Surface structure of molecular beam epitaxy (211)B HgCdTe by BENSON, J. D, ALMEIDA, L. A, CARMODY, M. W, EDWALL, D. D, MARKUNAS, J. K, JACOBS, R. N, MARTINKA, M, LEE, U

“…The as-grown molecular beam epitaxy (MBE) (211)B HgCdTe surface has variable surface topography, which is primarily dependent on substrate temperature and…”
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Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion by PIQUETTE, E. C, EDWALL, D. D, LEE, D. L, ARIAS, J. M

“…Characterization data are presented for arsenic-doped Hg^sub 1-x^Cd^sub x^Te epilayers, grown on CdZnTe substrates by molecular beam epitaxy. Arsenic…”
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A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays by TENNANT, W. E, THOMAS, M, MUZILLA, M, STOLTZ, A, DINAN, J. H, KOZLOWSKI, L. J, MCLEVIGE, W. V, EDWALL, D. D, ZANDIAN, M, SPARIOSU, K, HILDEBRANDT, G, GIL, V, ELY, P

“…In the last few years Rockwell has developed a novel simultaneous unipolar multispectral integrated HgCdTe detector and focal plane array technology that is a…”
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Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structures by DARASELIA, M, CARMODY, M, EDWALL, D. D, TIWALD, T. E

“…This paper reports the further development of the model for the analysis of FTIR transmission spectra from the dual-color Hg^sub 1-x^Cd^sub x^Te (MCT)…”
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Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon by CARMODY, M, EDWALL, D, DHAR, N. K, ELLSWORTH, J, ARIAS, J, GROENERT, M, JACOBS, R, ALMEIDA, L. A, DINAN, J. H, CHEN, Y, BRILL, G

“…It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier…”
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Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy by Arkun, F. Erdem, Edwall, Dennis D., Ellsworth, Jon, Douglas, Sheri, Zandian, Majid, Carmody, Michael

“…Recent advances in growth of Hg 1− x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg 1− x Cd x Te with good…”
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Fundamental materials studies of undoped, in-doped, and as-doped Hg1-xCdxTe by SWARTZ, C. H, TOMPKINS, R. P, VURGAFTMAN, I, MEYER, J. R, GILES, N. C, MYERS, T. H, EDWALL, D. D, ELLSWORTH, J, PIQUETTE, E, ARIAS, J, BERDING, M, KRISHNAMURTHY, S

“…Variable magnetic-field Hall and transient photoconductance-lifetime measurements were performed on a series of undoped, In-doped, and As-doped HgCdTe samples…”
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Optical absorption properties of HgCdTe epilayers with uniform composition by MOAZZAMI, K, LIAO, D, PHILLIPS, J. D, LEE, D. L, CARMODY, M, ZANDIAN, M, EDWALL, D. D

“…Hg1-xCdxTe is an important material for high-performance infrared detection for a wide spectral range, from 1.7 *mm to beyond 14 *mm. An accurate understanding…”
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LWIR HgCdTe on Si detector performance and analysis by CARMODY, M, PASKO, J. G, DHAR, N. K, EDWALL, D, BAILEY, R, ARIAS, J, GROENERT, M, ALMEIDA, L. A, DINAN, J. H, CHEN, Y, BRILL, G

“…We have fabricated a series of 256 pixel × 256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown…”
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MCT-on-silicon negative luminescence devices with high efficiency by LINDLE, J. R, BEWLEY, W. W, VURGAFTMAN, I, MEYER, J. R, THOMAS, M. L, TENNANT, W. E, EDWALL, D. D, PIQUETTE, E

“…We used an InSb radiometric thermal imager to characterize the performance of 1'' × 1'' negative luminescent (NL) arrays. The devices grown on both CdZnTe (two…”
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Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays by ALMEIDA, L. A, THOMAS, M, LARSEN, W, SPARIOSU, K, EDWALL, D. D, BENSON, J. D, MASON, W, STOLTZ, A. J, DINAN, J. H

“…We report the development and fabrication of two-color mid-wavelength infrared (MWIR) and short-wavelength infrared (SWIR) HgCdTe-based focalplane arrays…”
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Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance by CARMODY, M, PASKO, J. G, DHAR, N. K, EDWALL, D, DARASELIA, M, ALMEIDA, L. A, MOLSTAD, J, DINAN, J. H, MARKUNAS, J. K, CHEN, Y, BRILL, G

“…In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the…”
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