GaN/Si vs GaAs LNA Linear and Nonlinear Characterizations, New FOMs, in Millimeter Wave T/R Chip Context

This paper presents a comparative performance analysis of two LNAs realized in GaAs and GaN technologies for millimeter wave T/R chip (transceiver/receiver) applications. Circuits are fabricated using two different technologies and characterized on board. Measurements are performed in 24-32 GHz freq...

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Bibliographic Details
Published in:	2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) pp. 1 - 3
Main Authors:	Letailleur, Lucas, Hajjar, Ahmad Al, Villegas, Martine, Edoua K, Charle, El Kamouchi, Majid, Leblanc, Remv
Format:	Conference Proceeding
Language:	English
Published:	IEEE 07-04-2022
Subjects:	Figure of merit Gallium arsenide GaN integrated circuit Linearity Low noise amplifier mHEMTs Millimeter wave measurements mmWave Performance evaluation Power measurement receiver Semiconductor device measurement
Online Access:	Get full text
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Summary:	This paper presents a comparative performance analysis of two LNAs realized in GaAs and GaN technologies for millimeter wave T/R chip (transceiver/receiver) applications. Circuits are fabricated using two different technologies and characterized on board. Measurements are performed in 24-32 GHz frequency band. A first comparison based on classic measurements is done by introducing a linear factor of merit. Non-linear characterizations complete this set of measurements to quantify the power handling of the two LNAs in order to determine the linear and non-linear operating areas and the handling of the spurious signals. We introduce a new large signal figure of merit (FOMLS) to quantify these performances. These two FOMs are applied to a state of the art to analyse performances according to system requirements.
ISSN:	2689-5498
DOI:	10.1109/INMMiC54248.2022.9762168