Search Results - "Edge, L F"

Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon by Mi, X., Cady, J. V., Zajac, D. M., Stehlik, J., Edge, L. F., Petta, J. R.

“…We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an…”
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How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces by Dodson, J P, Ercan, H Ekmel, Corrigan, J, Losert, Merritt P, Holman, Nathan, McJunkin, Thomas, Edge, L F, Friesen, Mark, Coppersmith, S N, Eriksson, M A

“…The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital…”
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Coherent Control and Spectroscopy of a Semiconductor Quantum Dot Wigner Molecule by Corrigan, J., Dodson, J. P., Ercan, H. Ekmel, Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Knapp, T. J., Holman, Nathan, McJunkin, Thomas, Neyens, Samuel F., MacQuarrie, E. R., Foote, Ryan H., Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.

“…Semiconductor quantum dots containing more than one electron have found wide application in qubits, where they enable readout and enhance polarizability…”
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Coherent transfer of quantum information in a silicon double quantum dot using resonant SWAP gates by Sigillito, A. J., Gullans, M. J., Edge, L. F., Borselli, M., Petta, J. R.

“…Spin-based quantum processors in silicon quantum dots offer high-fidelity single and two-qubit operation. Recently multi-qubit devices have been realized;…”
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Measurement of the band offsets between amorphous LaAlO3 and silicon by Edge, L. F., Schlom, D. G., Chambers, S. A., Cicerrella, E., Freeouf, J. L., Holländer, B., Schubert, J.

“…The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These…”
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Microwave engineering for semiconductor quantum dots in a cQED architecture by Holman, Nathan, Dodson, J. P., Edge, L. F., Coppersmith, S. N., Friesen, Mark, McDermott, R., Eriksson, M. A.

“…We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for dot…”
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Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon by Edge, L. F., Schlom, D. G., Sivasubramani, P., Wallace, R. M., Holländer, B., Schubert, J.

“…Amorphous La Al O 3 thin films were deposited at room temperature directly on n -type and p -type Si (001) by molecular beam deposition. The dielectric…”
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Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond by Liu, Q, Yagishita, A, Loubet, N, Khakifirooz, A, Kulkarni, P, Yamamoto, T, Cheng, K, Fujiwara, M, Cai, J, Dorman, D, Mehta, S, Khare, P, Yako, K, Zhu, Y, Mignot, S, Kanakasabapathy, S, Monfray, S, Boeuf, F, Koburger, C, Sunamura, H, Ponoth, S, Reznicek, A, Haran, B, Upham, A, Johnson, R, Edge, L F, Kuss, J, Levin, T, Berliner, N, Leobandung, E, Skotnicki, T, Hane, M, Bu, H, Ishimaru, K, Kleemeier, W, Takayanagi, M, Doris, B, Sampson, R

“…We present UTBB devices with a gate length (L G ) of 25nm and competitive drive currents. The process flow features conventional gate-first high-k/metal and…”
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Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon by Edge, L. F., Schlom, D. G., Brewer, R. T., Chabal, Y. J., Williams, J. R., Chambers, S. A., Hinkle, C., Lucovsky, G., Yang, Y., Stemmer, S., Copel, M., Holländer, B., Schubert, J.

“…Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We…”
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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3 by AFANAS' EV, V. V, SHAMUILIA, S, BADYLEVICH, M, STESMANS, A, EDGE, L. F, TIAN, W, SCHLOM, D. G, LOPES, J. M. J, ROECKERATH, M, SCHUBERT, J

“…Spectroscopy of internal photoemission, photoconductivity, and optical absorption is used to characterize the differences in the electronic structure of…”
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Split-gate cavity coupler for silicon circuit quantum electrodynamics by Borjans, F., Croot, X., Putz, S., Mi, X., Quinn, S. M., Pan, A., Kerckhoff, J., Pritchett, E. J., Jackson, C. A., Edge, L. F., Ross, R. S., Ladd, T. D., Borselli, M. G., Gyure, M. F., Petta, J. R.

“…Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQDs). Here, we demonstrate a versatile split-gate…”
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Optical properties of La-based high- K dielectric films by Cicerrella, E., Freeouf, J. L., Edge, L. F., Schlom, D. G., Heeg, T., Schubert, J., Chambers, S. A.

“…We have characterized thin films of La Sc O 3 and La Al O 3 which were grown by molecular beam deposition on Si substrates. Samples of La Sc O 3 were also…”
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Progress toward a capacitively mediated CNOT between two charge qubits in Si/SiGe by MacQuarrie, E. R., Neyens, Samuel F., Dodson, J. P., Corrigan, J., Thorgrimsson, Brandur, Holman, Nathan, Palma, M., Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.

“…Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device…”
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Analysis of the (100)Si/LaALo3 structure by electron spin resonance : nature of the interface by CLEMER, K, STESMANS, A, AFANAS'EV, V. V, EDGE, L. F, SCHLOM, D. G

“…Electron spin resonance of paramagnetic point defects was used to probe (100)Si/LaAlO3 structures with nm-thick amorphous high-dielectric constant (κ) LaAlO3…”
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High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond by Liu, Q., Vinet, M., Gimbert, J., Loubet, N., Wacquez, R., Grenouillet, L., Le Tiec, Y., Khakifirooz, A., Nagumo, T., Cheng, K., Kothari, H., Chanemougame, D., Chafik, F., Guillaumet, S., Kuss, J., Allibert, F., Tsutsui, G., Li, J., Morin, P., Mehta, S., Johnson, R., Edge, L. F., Ponoth, S., Levin, T., Kanakasabapathy, S., Haran, B., Bu, H., Bataillon, J.-L, Weber, O., Faynot, O., Josse, E., Haond, M., Kleemeier, W., Khare, M., Skotnicki, T., Luning, S., Doris, B., Celik, M., Sampson, R.

“…We report, for the first time, high performance Ultra-thin Body and Box (UTBB) FDSOI devices with a gate length (L G ) of 20nm and BOX thickness (T BOX ) of…”
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Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001) by Sivasubramani, P., Kim, M. J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Craft, H. S., Maria, J.-P.

“…We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and…”
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces by Afanas’ev, V. V., Stesmans, A., Edge, L. F., Schlom, D. G., Heeg, T., Schubert, J.

“…Incorporation of a ∼1-nm-thick SiOx interlayer is found to have little effect on the band alignment between a (100) Si substrate and amorphous LaAlO3, LaScO2,…”
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How valley-orbit states in silicon quantum dots probe quantum well interfaces by Dodson, J. P, Ercan, H. Ekmel, Corrigan, J, Losert, Merritt, Holman, Nathan, McJunkin, Thomas, Edge, L. F, Friesen, Mark, Coppersmith, S. N, Eriksson, M. A

“…Physical Review Letters (Vol. 128, Issue 14), (2022) The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood…”
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Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides by Edge, L.F., Schlom, D.G., Stemmer, S., Lucovsky, G., Luning, J.

“…Nanocrystallinity has been detected in the X-ray absorption spectra of transition metal and rare-earth oxides by (i) removal of d-state degeneracies in the (a)…”
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Extremely thin SOI (ETSOI) technology: Past, present, and future by Cheng, K, Khakifirooz, A, Kulkarni, P, Ponoth, S, Kuss, J, Edge, L F, Kimball, A, Kanakasabapathy, S, Schmitz, S, Reznicek, A, Adam, T, He, H, Mehta, S, Upham, A, Seo, S, Herman, J L, Johnson, R, Zhu, Y, Jamison, P, Haran, B S, Zhu, Z, Fan, S, Bu, H, Sadana, D K, Kozlowski, P, O'Neill, J, Doris, B, Shahidi, G

“…As the mainstream bulk devices face formidable challenges to scale beyond 20nm node, there is an increasingly renewed interest in fully depleted devices for…”
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