Unusual Growth of InP Nanowires Grown on Silicon Surfaces

Unusual Growth of InP Nanowires Grown on Silicon Surfaces

Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on

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Bibliographic Details
Published in:2006 Sixth IEEE Conference on Nanotechnology Vol. 2; pp. 620 - 623
Main Authors: Kimukin, I., Johns, C.D., Edgar, C.W., Islam, M.S., Sungsoo Yi
Format: Conference Proceeding
Language:English
Published: IEEE 2006
Subjects:
Absorption
Atomic layer deposition
Gallium arsenide
Gold
Indium phosphide
InP
Lattices
MOCVD Growth
Nanowire
Nanowires
Optical microscopy
Scanning electron microscopy
Silicon
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Description
Summary:Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on
ISBN:9781424400775
1424400775
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2006.247730