Search Results - "Eddy, Charles R"

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  1. 1

    Coherent X‑ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth by Myint, Peco, Woodward, Jeffrey M., Wang, Chenyu, Zhang, Xiaozhi, Wiegart, Lutz, Fluerasu, Andrei, Headrick, Randall L., Eddy, Charles R., Ludwig, Karl F.

    Published in ACS nano (23-01-2024)
    “…Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low…”
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    Journal Article
  2. 2

    Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3 by Johnson, Nicholas R., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles. R., George, Steven M.

    Published in Applied physics letters (17-06-2019)
    “…Gallium nitride (GaN) is a wide-bandgap semiconductor that is useful for optoelectronics and high speed and high power electronics. Fabrication of GaN devices…”
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    Journal Article
  3. 3

    Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation by Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.

    Published in IEEE electron device letters (01-08-2014)
    “…AlGaN/GaN high electron mobility transistors grown on Si, SiC, and sapphire substrates were exposed to 2-MeV proton irradiation in incremental fluences up to 6…”
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    Journal Article
  4. 4

    Structural Characterization of Atomic Layer Deposited Vanadium Dioxide by Kozen, Alexander C., Joress, Howie, Currie, Marc, Anderson, Virginia R., Eddy, Charles R., Wheeler, Virginia D.

    Published in Journal of physical chemistry. C (07-09-2017)
    “…Vanadium dioxide (VO2) is a promising smart material particularly appealing for added functionality in both electronic and optical applications. We investigate…”
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    Journal Article
  5. 5

    Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions by Yakes, Michael K, Gunlycke, Daniel, Tedesco, Joseph L, Campbell, Paul M, Myers-Ward, Rachael L, Eddy, Charles R, Gaskill, D. Kurt, Sheehan, Paul E, Laracuente, Arnaldo R

    Published in Nano letters (12-05-2010)
    “…We present the first microscopic transport study of epitaxial graphene on SiC using an ultrahigh vacuum four-probe scanning tunneling microscope. Anisotropic…”
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    Journal Article
  6. 6

    Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates by Caldwell, Joshua D, Anderson, Travis J, Culbertson, James C, Jernigan, Glenn G, Hobart, Karl D, Kub, Fritz J, Tadjer, Marko J, Tedesco, Joseph L, Hite, Jennifer K, Mastro, Michael A, Myers-Ward, Rachael L, Eddy, Charles R, Campbell, Paul M, Gaskill, D. Kurt

    Published in ACS nano (23-02-2010)
    “…To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry…”
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    Journal Article
  7. 7

    Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene by Friedman, Adam L., Tedesco, Joseph L., Campbell, Paul M., Culbertson, James C., Aifer, Edward, Perkins, F. Keith, Myers-Ward, Rachael L., Hite, Jennifer K., Eddy, Charles R., Jernigan, Glenn G., Gaskill, D. Kurt

    Published in Nano letters (13-10-2010)
    “…We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene…”
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    Journal Article
  8. 8

    Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films by Tadjer, M. J., Anderson, T. J., Hobart, K. D., Feygelson, T. I., Caldwell, J. D., Eddy, C. R., Kub, F. J., Butler, J. E., Pate, B., Melngailis, J.

    Published in IEEE electron device letters (01-01-2012)
    “…Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the…”
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    Journal Article
  9. 9

    Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation by Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.

    Published in IEEE electron device letters (01-09-2013)
    “…Enhancements in AlGaN/GaN high-electron-mobility transistor (HEMT) performance have been realized through ultrathin (4 nm) AlN passivation layers, formed by…”
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    Journal Article
  10. 10

    Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates by Hite, Jennifer K, Robinson, Zachary R, Eddy, Charles R, Feigelson, Boris N

    Published in ACS applied materials & interfaces (22-07-2015)
    “…Hexagonal boron nitride (h-BN) is an important material for the development of new 2D heterostructures. To enable this development, the relationship between…”
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    Journal Article
  11. 11
  12. 12

    Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates by Hwang, Wan Sik, Zhao, Pei, Tahy, Kristof, Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Gaskill, D. Kurt, Robinson, Joshua A., Haensch, Wilfried, Xing, Huili (Grace), Seabaugh, Alan, Jena, Debdeep

    Published in APL materials (01-01-2015)
    “…We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the…”
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    Journal Article
  13. 13
  14. 14

    Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes by Kim, Byung-Jae, Lee, Chongmin, Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Ren, Fan, Pearton, Stephen J., Kim, Jihyun

    Published in Applied physics letters (16-07-2012)
    “…We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was…”
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    Journal Article
  15. 15

    GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes by Kim, Byung-Jae, Yang, Gwangseok, Kim, Hong-Yeol, Baik, Kwang Hyeon, Mastro, Michael A, Hite, Jennifer K, Eddy, Jr, Charles R, Ren, Fan, Pearton, Stephen J, Kim, Jihyun

    Published in Optics express (18-11-2013)
    “…We demonstrate AuCl3-doped graphene transparent conductive electrodes integrated in GaN-based ultraviolet (UV) light-emitting diodes (LEDs) with an emission…”
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    Journal Article
  16. 16

    Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect by Ellis, Chase T., Stier, Andreas V., Kim, Myoung-Hwan, Tischler, Joseph G., Glaser, Evan R., Myers-Ward, Rachael L., Tedesco, Joseph L., Eddy, Charles R., Gaskill, D. Kurt, Cerne, John

    Published in Scientific reports (05-11-2013)
    “…The remarkable electronic properties of graphene strongly depend on the thickness and geometry of graphene stacks. This wide range of electronic tunability is…”
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    Journal Article
  17. 17

    Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates by Ito, Takashi, Forman, Sarah M, Cao, Chundi, Li, Feng, Eddy, Charles R, Mastro, Michael A, Holm, Ronald T, Henry, Richard L, Hohn, Keith L, Edgar, J. H

    Published in Langmuir (01-07-2008)
    “…In this paper we describe the formation and characterization of self-assembled monolayers of octadecylphosphonic acid (ODPA) on epitaxial (0001) GaN films on…”
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    Journal Article
  18. 18

    The role of plasma in plasma-enhanced atomic layer deposition of crystalline films by Boris, David R., Wheeler, Virginia D., Nepal, Neeraj, Qadri, Syed B., Walton, Scott G., Eddy, Charles (Chip) R.

    “…The inclusion of plasma in atomic layer deposition processes generally offers the benefit of substantially reduced growth temperatures and greater flexibility…”
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    Book Review Journal Article
  19. 19

    Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes by Kim, Byung-Jae, Mastro, Michael A, Hite, Jennifer, Eddy, Jr, Charles R, Kim, Jihyun

    Published in Optics express (25-10-2010)
    “…We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was…”
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    Journal Article
  20. 20

    Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition by Johnson, Scooter D, Glaser, Evan R, Kub, Fritz J, Eddy, Jr, Charles R

    Published in Journal of visualized experiments (15-05-2015)
    “…Aerosol deposition (AD) is a thick-film deposition process that can produce layers up to several hundred micrometers thick with densities greater than 95% of…”
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    Journal Article