Search Results - "Eddy, Charles R"
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1
Coherent X‑ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth
Published in ACS nano (23-01-2024)“…Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low…”
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2
Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3
Published in Applied physics letters (17-06-2019)“…Gallium nitride (GaN) is a wide-bandgap semiconductor that is useful for optoelectronics and high speed and high power electronics. Fabrication of GaN devices…”
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3
Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
Published in IEEE electron device letters (01-08-2014)“…AlGaN/GaN high electron mobility transistors grown on Si, SiC, and sapphire substrates were exposed to 2-MeV proton irradiation in incremental fluences up to 6…”
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4
Structural Characterization of Atomic Layer Deposited Vanadium Dioxide
Published in Journal of physical chemistry. C (07-09-2017)“…Vanadium dioxide (VO2) is a promising smart material particularly appealing for added functionality in both electronic and optical applications. We investigate…”
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5
Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions
Published in Nano letters (12-05-2010)“…We present the first microscopic transport study of epitaxial graphene on SiC using an ultrahigh vacuum four-probe scanning tunneling microscope. Anisotropic…”
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6
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Published in ACS nano (23-02-2010)“…To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry…”
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7
Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene
Published in Nano letters (13-10-2010)“…We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene…”
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8
Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
Published in IEEE electron device letters (01-01-2012)“…Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the…”
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9
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Published in IEEE electron device letters (01-09-2013)“…Enhancements in AlGaN/GaN high-electron-mobility transistor (HEMT) performance have been realized through ultrathin (4 nm) AlN passivation layers, formed by…”
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10
Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates
Published in ACS applied materials & interfaces (22-07-2015)“…Hexagonal boron nitride (h-BN) is an important material for the development of new 2D heterostructures. To enable this development, the relationship between…”
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11
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
Published in Nano letters (12-08-2009)“…We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall…”
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12
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
Published in APL materials (01-01-2015)“…We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the…”
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13
Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process
Published in Physica status solidi. A, Applications and materials science (01-04-2016)“…Top‐side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable…”
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14
Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
Published in Applied physics letters (16-07-2012)“…We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was…”
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15
GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes
Published in Optics express (18-11-2013)“…We demonstrate AuCl3-doped graphene transparent conductive electrodes integrated in GaN-based ultraviolet (UV) light-emitting diodes (LEDs) with an emission…”
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16
Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect
Published in Scientific reports (05-11-2013)“…The remarkable electronic properties of graphene strongly depend on the thickness and geometry of graphene stacks. This wide range of electronic tunability is…”
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17
Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates
Published in Langmuir (01-07-2008)“…In this paper we describe the formation and characterization of self-assembled monolayers of octadecylphosphonic acid (ODPA) on epitaxial (0001) GaN films on…”
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18
The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-2020)“…The inclusion of plasma in atomic layer deposition processes generally offers the benefit of substantially reduced growth temperatures and greater flexibility…”
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19
Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes
Published in Optics express (25-10-2010)“…We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was…”
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20
Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition
Published in Journal of visualized experiments (15-05-2015)“…Aerosol deposition (AD) is a thick-film deposition process that can produce layers up to several hundred micrometers thick with densities greater than 95% of…”
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