Search Results - "Eblabla, Abdalla"

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit by Varghese, Arathy, Eblabla, Abdalla, Elgaid, Khaled

“…Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides…”
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Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon by Benakaprasad, Bhavana, Eblabla, Abdalla M., Li, Xu, Crawford, Kevin G., Elgaid, Khaled

“…In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven…”
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GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity by Varghese, Arathy, Eblabla, Abdalla, Wu, Zehao, Ghozati, Seyed Urman, Elgaid, Khaled

“…This work presents performance evaluation of GaN High Electron Mobility Transistor (HEMT) based ultraviolet (UV) detector on Si substrate. In addition to the…”
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Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology by Chandrasekar, Hareesh, Uren, Michael J., Casbon, Michael A., Hirshy, Hassan, Eblabla, Abdalla, Elgaid, Khaled, Pomeroy, James W., Tasker, Paul J., Kuball, Martin

“…Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are…”
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Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates by Chandrasekar, Hareesh, Uren, Michael J., Eblabla, Abdalla, Hirshy, Hassan, Casbon, Michael A., Tasker, Paul J., Elgaid, Khaled, Kuball, Martin

“…We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for…”
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GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology by Eblabla, Abdalla Mohamed, Xu Li, Wallis, David J., Guiney, Ivor, Elgaid, Khaled

“…In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ <; 40 Ω·cm) at…”
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Open-Gated GaN HEMT-Based pH Detectors Using Patterned Sensing Area by Varghese, Arathy, Eblabla, Abdalla, Elgaid, Khaled

“…This paper presents a pioneering study on the pH sensing performance of open gated GaN high-electron mobility transistors (HEMTs) with five different device…”
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Mm-wave frequencies gan-on-si hemts and mmic technology development by Eblabla, Abdalla

“…Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs) grown on Silicon (Si) substrates technology is emerging as one of the most promising…”
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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon by Ghosh, Saptarsi, Hinz, Alexander, Fairclough, Simon M, Spiridon, Bogdan F, Eblabla, Abdalla, Casbon, Michael A, Kappers, Menno J, Elgaid, Khaled, Alam, Saiful, Oliver, Rachel A, Wallis, David J

“…The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of…”
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GaN-on-Si Thermoresistive Flow Sensor with Gold Hot-wire by Jones, G. Rhys, Gardner, Julian W., Vincent, Timothy, De Luca, Andrea, Longobardi, Giorgia, Eblabla, Abdalla, Elgaid, Khaled, Wotherspoon, Tracy, Birch, Richard, Udrea, Florin

“…In this paper we present for the first time a Gallium Nitride-on-Silicon (GaN-on-Si) anenometric flow sensor based on a gold (Au) thermoresistive hot-wire. The…”
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Free-standing Lateral AlGaN/GaN Schottky Barrier Diode Based-on GaN-on-Si Technology for High Microwave Power Applications by Eblabla, Abdalla, Sampson, Wesley, Collier, Arthur, Elgaid, Khaled

“…This paper presents the development of a lateral AlGaN/GaN Schottky barrier diode (SBD) on free-standing GaN epilayers achieved through Si substrate removal…”
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Low-Loss MIM Capacitor on Thick SiO2 Dielectric for GaN-on-Si Substrates with Standard and Elevated Top Electrode Configurations by Eblabla, Abdalla, Varghese, Arathy, Chandrashekar, Hareesh, Uren, Michael J., Kuball, Martin, Elgaid, Khaled

“…In this paper, Monolithic Microwave Integrated Circuits (MMICs)-compatible \mathrm{Si}_{3} \mathrm{~N}_{4}-based metal-insulator-metal (MIM)-capacitors with…”
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Membrane Supported GaN CPW Structures for High-frequency and High-power Applications by Eblabla, Abdalla, Alathbah, Moath, Wu, Zehao, Lees, Jonathan, Elgaid, Khaled

“…High performance coplanar waveguides (CPWs) on GaN membrane technology for AlGaN/GaN high electron mobility transistors (HEMTs) grown on low-resistivity (LR)…”
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Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology by Chandrasekar, Hareesh, Uren, Michael J, Casbon, Michael A, Hirshy, Hassan, Eblabla, Abdalla, Elgaid, Khaled, Pomeroy, James W, Tasker, Paul J, Kuball, Martin

“…IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 66, NO. 4, APRIL 2019 Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the…”
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Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC) by Eblabla, Abdalla, Benakaprasad, Bhavana, Xu Li, Wallis, David J., Guiney, Ivor, Humphreys, Colin, Elgaid, Khaled

“…In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed…”
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