Search Results - "Ebke, D."

Large resistivity change and phase transition in the antiferromagnetic semiconductors LiMnAs and LaOMnAs by Beleanu, A., Kiss, J., Kreiner, G., Köhler, C., Müchler, L., Schnelle, W., Burkhardt, U., Chadov, S., Medvediev, S., Ebke, D., Felser, C., Cordier, G., Albert, B., Hoser, A., Bernardi, F., Larkin, T. I., Pröpper, D., Boris, A. V., Keimer, B.

“…Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of…”
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Anomalous Hall effect in perpendicularly magnetized Mn3−xGa thin films by Glas, M., Ebke, D., Imort, I.-M., Thomas, P., Reiss, G.

“…Mn3−xGa (x=0.1, 0.4, 0.7) thin films on MgO and SrTiO3 substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall…”
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Anomalous Hall effect in perpendicularly magnetized thin films by Glas, M., Ebke, D., Imort, I.-M., Thomas, P., Reiss, G.

“…Mn 3 - x Ga (x=0.1, 0.4, 0.7) thin films on MgO and SrTiO3 substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous…”
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Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier by Krumme, B., Ebke, D., Weis, C., Makarov, S. I., Warland, A., Hütten, A., Wende, H.

“…We investigated the electronic structure as well as the magnetic properties of a Co2MnSi film on MgO(100) element-specifically at the interface to a MgO tunnel…”
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Low B2 crystallization temperature and high tunnel magnetoresistance in Co2FeAl/MgO/Co-Fe magnetic tunnel junctions by EBKE, D, THOMAS, P, SCHEBAUM, O, SCHÄFERS, M, NISSEN, D, DREWELLO, V, HÜTTEN, A, THOMAS, A

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Preparation of Heusler thin films: The quaternary alloy Co2Fe0.5Mn0.5Si by Ebke, D., Thomas, A., Hütten, A., Balke, B., Felser, C., Schmalhorst, J., Reiss, G.

“…In this work the basic strategies for the preparation of Co2Mn0.5Fe0.5Si as an example for Heusler alloy thin films will be described. Texture and magnetic…”
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Spin-electronic devices with half-metallic Heusler alloys by Hütten, A., Schmalhorst, J., Thomas, A., Kämmerer, S., Sacher, M., Ebke, D., Liu, N.-N., Kou, X., Reiss, G.

“…We have integrated Co 2MnSi as a representative of the full-Heusler compound family as one magnetic electrode into technological relevant magnetic tunnel…”
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Half-metallic {Co 2MnSi/Co 2FeSi} multilayered Heusler electrodes in magnetic tunnel junctions by Castrup, A., Dasgupta, S., Scherer, T., Rösner, H., Ellrich, J., Kruk, R., Ghafari, M., Hahn, H., Hütten, A., Ebke, D., Liu, N.-N., Ennen, I., Thomas, A., Schmalhorst, J., Reiss, G.

“…It is demonstrated that the atomic ordering of Co 2FeSi can significantly be improved in terms of magnetization and tunnel magnetoresistance using multilayered…”
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Large tunnel magnetoresistance in tunnel junctions with Co2MnSi∕Co2FeSi multilayer electrode by Ebke, D., Schmalhorst, J., Liu, N.-N., Thomas, A., Reiss, G., Hütten, A.

“…Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas…”
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Low B2 crystallization temperature and high tunnel magnetoresistance in magnetic tunnel junctions by Ebke, D., Thomas, P., Schebaum, O., Schäfers, M., Nissen, D., Drewello, V., Hütten, A., Thomas, A.

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Low B2 crystallization temperature and high tunnel magnetoresistance in Co sub(2)FeAl/MgO/Co-Fe magnetic tunnel junctions by Ebke, D, Thomas, P, Schebaum, O, Schaefers, M, Nissen, D, Drewello, V, Huetten, A, Thomas, A

“…We present tunnel magnetoresistance values of up to 147% at room temperature and 273% at 13 K for MgO-based magnetic tunnel junctions with Co sub(2)FeAl and…”
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Low B2 crystallization temperature and high tunnel magnetoresistance in Co 2 FeAl / MgO / Co – Fe magnetic tunnel junctions by Ebke, D., Thomas, P., Schebaum, O., Schäfers, M., Nissen, D., Drewello, V., Hütten, A., Thomas, A.

“…We present tunnel magnetoresistance values of up to 147% at room temperature and 273% at 13 K for MgO-based magnetic tunnel junctions with Co 2 FeAl and Co–Fe…”
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X-ray absorption and magnetic circular dichroism studies of Co2FeAl in magnetic tunnel junctions by Ebke, D., Kugler, Z., Thomas, P., Schebaum, O., Schafers, M., Nissen, D., Schmalhorst, J., Hutten, A., Arenholz, E., Thomas, A.

“…The bulk magnetic moment and the element specific magnetic moment of Co{sub 2}FeAl thin films were examined as a function of annealing temperature by…”
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Preparation of Heusler thin films: The quaternary alloy Co 2 Fe 0.5 Mn 0.5 Si by Ebke, D., Thomas, A., Hütten, A., Balke, B., Felser, C., Schmalhorst, J., Reiss, G.

“…Abstract In this work the basic strategies for the preparation of Co 2 Mn 0.5 Fe 0.5 Si as an example for Heusler alloy thin films will be described. Texture…”
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Large tunnel magnetoresistance in tunnel junctionswith Co 2 Mn Si ∕ Co 2 Fe Si multilayer electrode by Ebke, D., Schmalhorst, J., Liu, N.-N., Thomas, A., Reiss, G., Hütten, A.

“…Two kinds of magnetic tunnel junctions with Co 2 Fe Si electrodes are compared. Using Co 2 Fe Si single layers a tunnel magnetoresistance of 52% is reached,…”
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Chemical and Magnetic Interface Properties of Tunnel Junctions With Co(2) MnSi/Co(2)FeSi Multilayer Electrode Showing Large Tunneling Magnetoresistance by Schmalhorst, J, Ebke, D, Sacher, M D, Liu, Ning-Ning, Thomas, A, Reiss, G, Hutten, A, Arenholz, E

“…Transport, as well as chemical and magnetic interface properties of two kinds of magnetic tunnel junctions (MTJs) with Co(2)FeSi electrode, Al-O barrier, and…”
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Chemical and Magnetic Interface Properties of Tunnel Junctions With Co 2 MnSi/Co 2FeSi Multilayer Electrode Showing Large Tunneling Magnetoresistance by Schmalhorst, J., Ebke, D., Sacher, M.D., Ning-Ning Liu, Thomas, A., Reiss, G., Hutten, A., Arenholz, E.

“…Transport, as well as chemical and magnetic interface properties of two kinds of magnetic tunnel junctions (MTJs) with Co 2 FeSi electrode, Al-O barrier, and…”
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Chemical and Magnetic Interface Properties of Tunnel Junctions With Co2 MnSi/Co2FeSi Multilayer Electrode Showing Large Tunneling Magnetoresistance by Schmalhorst, J, Ebke, D, Sacher, M.D, Ning-Ning Liu, Ning-Ning Liu, Thomas, A, Reiss, G, Hutten, A, Arenholz, E

“…For junctions with Co2FeSi single-layer electrodes, a tunnel magnetoresistance of up to 52% is found after optimal annealing for an optimal Al thickness of 1.5…”
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Chemical and Magnetic Interface Properties of Tunnel Junctions With Co$_2$MnSi/Co$_2$FeSi Multilayer Electrode Showing Large Tunneling Magnetoresistance by Schmalhorst, Jan, Ebke, Daniel, Sacher, Marc D., Liu, Ning-Ning, Thomas, Andy, Reiss, Gnter, Htten, Andreas, Arenholz, Elke

“…Transport, as well as chemical and magnetic interface properties of two kinds of magnetic tunnel junctions (MTJs) with Co sub(2)FeSi electrode, Al-O barrier,…”
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Transport properties of magnetic tunnel junctions with Co 2 Mn Si electrodes: The influence of temperature-dependent interface magnetization and electronic band structure by Schmalhorst, J., Thomas, A., Kämmerer, S., Schebaum, O., Ebke, D., Sacher, M. D., Reiss, G., Hütten, A., Turchanin, A., Gölzhäuser, A., Arenholz, E.

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