Search Results - "Ebersman, B."

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs by Walter, K.M., Ebersman, B., Sunderland, D.A., Berg, G.D., Freeman, G.G., Groves, R.A., Jadus, D.K., Harame, D.L.

“…A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially…”
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A scalable, statistical SPICE Gummel-Poon model for SiGe HBTs by Walter, K.M., Ebersman, B., Sunderland, D.A., Berg, G.D., Freeman, G.G., Groves, R.A., Jadus, D.K., Harame, D.L.

“…A scaleable, statistical model has been developed for SiGe HBTs. SPICE Gummel-Poon model parameters are scaled, and statistics added, using language features…”
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Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs by Jeng, S.J., Ahlgren, D.C., Berg, G.D., Ebersman, B., Freeman, G., Greenberg, D.R., Malinowski, J., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Colavito, D., Longstreet, M., Ronsheim, P., Subbanna, S., Harame, D.L.

“…We have explored the process window for polysilicon resistor in the self-aligned epi-base HBT process utilizing various structure and implant conditions. We…”
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Yield Learning Methodology in Early Technology Development by Xu Ouyang, Riggs, D., Ahsan, I., Patterson, O.D., Lea, D.M., Ebersman, B., Hawkins, K.V., Miller, K., Fox, S., Rice, J.

“…Yield learning during early technology development is critical to ensuring successful integration of new process technologies, meeting development schedules,…”
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