Search Results - "Eaglesham, D.J."

Implantation and transient boron diffusion: the role of the silicon self-interstitial by Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., Poate, J.M.

“…The phenomena associated with the transient diffusion of implanted B in Si are reviewed. The Si self-interstitial flux, which causes the B interstitialcy…”
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Light nitrogen implant for preparing thin-gate oxides by Liu, C.T., Ma, Y., Becerro, J., Nakahara, S., Eaglesham, D.J., Hillenius, S.J.

“…We have implanted nitrogen (N/sup +/) into Si substrates before growing thin thermal oxides, and discovered that light N/sup +/ doses of 5×10/sup 13/-5×10/sup…”
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The effect of carbon on diffusion in silicon by Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., Poate, J.M.

“…This paper presents experimental studies on the interaction between C and interstitials in crystalline Si. Boron doped Si superlattices, grown by molecular…”
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High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology by Jacobson, D.C., Kamgar, A., Eaglesham, D.J., Lloyd, E.J., Hillenius, S.J., Poate, J.M.

“…High energy ion implantation has been utilized to fabricate profiled tubs and to create gettering sites in deep submicron CMOS devices in bulk and epitaxial…”
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Efficient production of silicon-on-insulator films by co-implantation of He+ with H by Agarwal, Aditya, Haynes, T. E., Venezia, V. C., Holland, O. W., Eaglesham, D. J.

“…We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on…”
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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation by Weldon, M. K., Collot, M., Chabal, Y. J., Venezia, V. C., Agarwal, A., Haynes, T. E., Eaglesham, D. J., Christman, S. B., Chaban, E. E.

“…Infrared spectroscopy and secondary ion mass spectrometry are used to elucidate the mechanism by which co-implantation of He with H facilitates the shearing of…”
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon by Venezia, V. C., Haynes, T. E., Agarwal, Aditya, Pelaz, L., Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J.

“…We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal…”
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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling by Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

“…A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes…”
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Boron-enhanced diffusion of boron from ultralow-energy ion implantation by Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., Haynes, T. E.

“…We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the…”
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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials by Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

“…The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1×1014 cm−2 Si+ was…”
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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon by Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., Poate, J. M.

“…Ion implantation of Si (60 keV, 1×1014/cm2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B,…”
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Interstitial defects in silicon from 1–5 keV Si+ ion implantation by Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

“…Extended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3×1014 cm−2…”
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Transient enhanced diffusion of Sb and B due to MeV silicon implants by Eaglesham, D. J., Haynes, T. E., Gossmann, H.-J., Jacobson, D. C., Stolk, P. A., Poate, J. M.

“…We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si+ ion implants at very high…”
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Island formation in Ge/Si epitaxy by Eaglesham, D.J., Hull, R.

“…We review current understanding of the island formation process, and outline some of the remaining problems. The initial island formation is coherent, with…”
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Implant damage and transient enhanced diffusion in Si by Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Haynes, T.E., Poate, J.M.

“…Transmission electron microscopy is used to address two key questions for ion-implant technology in Si. First, how does ion damage influence the diffusion of…”
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Transient enhanced diffusion from decaborane molecular ion implantation by Agarwal, Aditya, Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J., Sosnowski, M., Poate, J. M., Yamada, I., Matsuo, J., Haynes, T. E.

“…Transient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and…”
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Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon by Agarwal, Aditya, Gossmann, H.-J, Eaglesham, D.J, Pelaz, L, Herner, S.B, Jacobson, D.C, Haynes, T.E, Simonton, R

“…Continued use of ion implantation for doping of silicon integrated circuits will soon require implantation energies below 5 keV to form electrical junctions…”
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The mechanism of iron gettering in boron-doped silicon by Stolk, P. A., Benton, J. L., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Myers, S. M., Haynes, T. E.

“…High-energy B implantation was used to introduce gettering layers into float-zone Si wafers contaminated with 2×1014 Fe/cm3. Secondary ion mass spectrometry…”
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0.18 /spl mu/m CMOS and beyond by Eaglesham, D.J.

“…As we move to the 0.18 /spl mu/m node and beyond, the dominant trend in device and process technology is a simple continuation of several decades of scaling…”
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The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si by Libertino, S., Benton, J. L., Jacobson, D. C., Eaglesham, D. J., Poate, J. M., Coffa, S., Fuochi, P. G., Lavalle, M.

“…We compare the defect complexes generated in crystalline Si by electron irradiation and ion implantation, using irradiation fluences which deposit the same…”
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