Search Results - "EROKHIN, Y. N"

Ga delta-doping layers in silicon by ZAGWIJN, P. M, EROKHIN, Y. N, SLIJKERMAN, W. F. J, VAN DER VEEN, J. F, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

“…Delta-doping layers in silicon have been made by deposition of 0.39 monolayer Ga on Si(001). The dopant atoms have been buried in the host crystal using a…”
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Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon by PRAMANICK, S, EROKHIN, Y. N, PATNAIK, B. K, ROZGONYI, G. A

“…In this letter we examine the interdiffusion and reaction of deposited cobalt layers during the formation of nanoscale (<35 nm) silicide films on heavily…”
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In   situ electric field perturbations of deep trap accumulation in silicon during proton ion implantation by Erokhin, Yu. N., Ravi, J., Rozgonyi, G. A., White, C. W.

“…The influence of in situ perturbations of the silicon target crystal electronic subsystem during H+ ion implantation has been studied in terms of the type,…”
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Recombination enhanced suppression of deep trap accumulation in silicon during He + ion implantation by Erokhin, Yu.N., Ravi, J., White, C.W., Rozgonyi, G.A.

“…The influence of in situ forward bias on the accumulation of defect complexes in p +-n diodes during 75 keV He + ion implantation has been investigated. Deep…”
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Spatially confined nickel disilicide formation at 400°C on ion implantation preamorphized silicon by EROKHIN, YU. N, HONG, F, PRAMANICK, S, ROZGONYI, G. A, PATNAIK, B. K, WHITE, C. W

“…The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni…”
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