Search Results - "EMONET, N"
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1
Protective effects of antioxidants against UVA-induced DNA damage in human skin fibroblasts in culture
Published in Free radical research (01-01-1998)“…Ultraviolet A radiation (UVA, 320-400 nm) is mutagenic and induces genomic damage to skin cells. N-acetyl-cysteine (NAC), selenium and zinc have been shown to…”
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Journal Article -
2
Anticipation of nitrided oxides electrical thickness based on XPS measurement
Published in Materials science in semiconductor processing (2004)“…Plasma nitridation of thermally grown oxide films has proven to be an excellent gate dielectric in meeting the electrical requirements of the 65 nm node. As…”
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Journal Article -
3
Thiols and selenium: protective effect on human skin fibroblasts exposed to UVA radiation
Published in J. PHOTOCHEM. PHOTOBIOL. B:BIOL (01-08-1997)“…The sensitivity of human dermal fibroblasts to UVA radiation has been linked to a decrease in intracellular glutathione (GSH) levels. GSH…”
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Journal Article Conference Proceeding -
4
Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM
Published in Solid-state electronics (2005)“…The architecture, materials choice and process technology for stacked-capacitors in embedded-DRAM applications are a crucial concern for each new technology…”
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5
Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)“…A wide workfunction (/spl Phi//sub m/) tuning range from 4.29eV to 4.99eV using total silicidation of doped polysilicon gate with nickel is presented. As, B…”
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Conference Proceeding -
6
Low cost 65nm CMOS platform for Low Power & General Purpose applications
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)“…A 65nm CMOS platform employing General Purpose (GP) and Low Power (LP) devices and 0.5 /spl mu/m/sup 2/ 6T-SRAM bit-cells was developed using both conventional…”
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Conference Proceeding -
7
Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 nm Embedded DRAM Technologies
Published in 2006 European Solid-State Device Research Conference (01-09-2006)“…For the first time, we report a complete evaluation of a TiN/ZrO 2 /TiN stacked capacitor suitable for 45 nm embedded DRAM (eDRAM). Indeed, this study, done on…”
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Conference Proceeding -
8
Use of the Single-Cell Gel Electrophoresis Assay for the Immunofluorescent Detection of Specific DNA Damage
Published in Analytical biochemistry (15-05-1998)“…The single-cell gel electrophoresis assay or comet assay is now a widely used method to assess the level of DNA damage in irradiated or chemically modified…”
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Journal Article -
9
Isolation and characterization of genomic clones of human sequences presumably coding for hair cysteine-rich proteins
Published in Journal of dermatological science (1997)“…The major biochemical components of the mammalian hair are the intermediate filaments or keratins and the keratin associated proteins. Keratin associated…”
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Journal Article -
10
Effects of cadmium and zinc on solar-simulated light-irradiated cells: potential role of zinc-metallothionein in zinc-induced genoprotection
Published in Archives of biochemistry and biophysics (15-09-2002)“…Zinc is an essential oligoelement for cell growth and cell survival and has been demonstrated to protect cells from oxidative stress induced by UVA or from…”
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11
L‐arginine increases UVA cytotoxicity in irradiated human keratinocyte cell line: potential role of nitric oxide
Published in The FASEB journal (01-10-1999)“…ABSTRACTHuman fibroblasts and keratinocytes possess nitric oxide synthases (NOS), which metabolize L‐arginine (L‐Arg) for producing nitric oxide (NO•). This…”
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12
Low cost 65nm CMOS platform for low power & general purpose applications
Conference Proceeding -
13
Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform
Published in IEEE International Electron Devices Meeting 2003 (2003)“…This work shows the benefits of using plasma nitrided gate oxide which supports the gate leakage requirements for 65 nm platform development. Electrical data…”
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Conference Proceeding -
14
A functional 0.69 /spl mu/m/sup 2/ embedded 6T-SRAM bit cell for 65 nm CMOS platform
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)“…This work highlights a 65 nm CMOS technology platform for low power and general-purpose applications. A 6-T SRAM cell size of 0.69 /spl mu/m/sup 2/ with a 45…”
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Conference Proceeding