Search Results - "EGARD, Mikael"

RF and DC Analysis of Stressed InGaAs MOSFETs by Roll, Guntrade, Lind, Erik, Egard, Mikael, Johansson, Sofia, Ohlsson, Lars, Wernersson, Lars-Erik

“…A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with Al 2 O 3 /HfO 2 dielectric is presented. The main stress variation at…”
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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates by Johansson, S., Egard, M., Ghalamestani, S. G., Borg, B. M., Berg, M., Wernersson, L., Lind, E.

“…We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for…”
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Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration by Ohlsson, L., Bryllert, T., Gustafson, C., Sjoberg, D., Egard, M., Arlelid, M., Wernersson, L.

“…A readily mass-producible, flip-chip assembled, and slot-coupled III-V compound semiconductor dielectric resonator antenna operating in the millimeter-wave…”
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel \hbox\hbox\hbox MOSFET by Egard, M., Ohlsson, L., Arlelid, M., Persson, K.-M, Borg, B. M., Lenrick, F., Wallenberg, R., Lind, E., Wernersson, Lars-Erik

“…We have developed a self-aligned L g = 55 nm In 0.53 Ga 0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n ++ In 0.53 Ga 0.47 As…”
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET by EGARD, Mikael, OHLSSON, Lars, ÄRLELID, Mats, PERSSON, Karl-Magnus, MATTIAS BORG, B, LENRICK, Filip, WALLENBERG, Reine, LIND, Erik, WERNERSSON, Lars-Erik

“…We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source…”
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In0.53Ga0.47As RTD―MOSFET Millimeter-Wave Wavelet Generator by EGARD, Mikael, ÄRLELID, Mats, OHLSSON, Lars, MATTIAS BORG, B, LIND, Erik, WERNERSSON, Lars-Erik

“…We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode…”
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Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration: ANTENNAS AND PROPAGATION AT MM- AND SUB MM-WAVES by OHLSSON, Lars, BRYLLERT, Tomas, GUSTAFSON, Carl, SJÖBERG, Daniel, EGARD, Mikael, ÄRLELID, Mats, WERNERSSON, Lars-Erik

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Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode by Egard, M, Ärlelid, Mats, Lind, E, Wernersson, L

“…The paper reports on the bias stabilization of a 60-GHz resonant-tunneling diode (RTD)-based oscillator operated in pulsed mode. The oscillator contains an…”
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Coherent V-Band Pulse Generator for Impulse Radio BPSK by Arlelid, Mats, Egard, Mikael, Lind, Erik, Wernersson, Lars-Erik

“…A coherent pulse generator for implementation in an impulse radio system is presented. It accurately transforms a 12.5 GHz square wave input signal to 33 ps…”
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hbox\hbox\hbox RTD-MOSFET Millimeter-Wave Wavelet Generator by Egard, M., Arlelid, M., Ohlsson, L., Borg, B. M., Lind, E., Wernersson, L.

“…We report on the fabrication of a self-aligned regrown In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling…”
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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates: Special Issue on Radio-Frequency Nanoelectronics by JOHANSSON, Sofia, EGARD, Mikael, GORJI GHALAMESTANI, Sepideh, MATTIAS BORG, B, BERG, Martin, WERNERSSON, Lars-Erik, LIND, Erik

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Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz by Egard, Mikael, Johansson, Sofia, Johansson, Anne-Charlotte, Persson, Karl-Magnus, Dey, Anil, Borg, Mattias, Thelander, Claes, Wernersson, Lars-Erik, Lind, Erik

“…In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect…”
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RF reliability of gate last InGaAs nMOSFETs with high-k dielectric by Roll, Guntrade, Egard, Mikael, Johannson, Sofia, Ohlsson, Lars, Wernersson, Lars-Erik, Lind, Erik

“…A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al 2 O 3 /HfO 2 gate dielectric is presented. DC gate…”
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20 GHz Wavelet Generator Using a Gated Tunnel Diode by Egard, M., Arlelid, M., Lind, E., Astromskas, G., Wernersson, L.-E.

“…We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator…”
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Gated tunnel diode in oscillator applications with high frequency tuning by Wernersson, L.-E., Ärlelid, M., Egard, M., Lind, E.

“…A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator…”
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Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators by Egard, Mikael, Arlelid, Mats, Ohlsson, Lars, Borg, B. Mattias, Lind, Erik, Wernersson, Lars-Erik

“…Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to…”
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Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers by Egard, Mikael, Ohlsson, Lars, Borg, B. Mattias, Wernersson, Lars-erik, Lind, Erik

“…III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In 1-x Ga x As compounds are…”
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Gated tunnel diode with a reactive bias stabilizing network for 60 GHz impulse radio implementations by Egard, M, Ärlelid, Mats, Lind, E, Wernersson, Lars-Erik

“…We report on a gated tunnel diode (GTD) and its operation in a 60 GHz pulsed oscillator, also known as a wavelet generator. The wavelet generator operates with…”
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Tunneling-based devices and circuits by Wernersson, L.-E, Egard, M, Ärlelid, M, Lind, E

“…We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding…”
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High frequency performance of vertical InAs nanowire MOSFET by Lind, Erik, Egard, Mikael, Johansson, Sofia, Johansson, Anne-Charlotte, Borg, B Mattias, Thelander, Claes, Persson, Karl-Magnus, Dey, Anil W, Wernersson, Lars-Erik

“…We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al 2 O 3 high-K gate oxide. The…”
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