Search Results - "EASTMAN, L. F"

Growth, fabrication, and characterization of InGaN solar cells by Chen, X., Matthews, K. D., Hao, D., Schaff, W. J., Eastman, L. F.

“…The InGaN alloy system offers a unique opportunity to develop high efficiency multi‐junction solar cells. In this study, single junction solar cells made of…”
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Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors by ZHANG, A. P, ROWLAND, L. B, KAMINSKY, E. B, TILAK, V, GRANDE, J. C, TEETSOV, J, VERTIATCHIKH, A, EASTMAN, L. F

“…Device performance and defects in AlGaN/GaN high-electron mobility transistors (HEMTs) have been correlated. Surface depressions and threading dislocations,…”
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Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures by WANG, Z, REIMANN, K, WOERNER, M, ELSAESSER, T, HOFSTETTER, D, HWANG, J, SCHAFF, W. J, EASTMAN, L. F

“…We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a…”
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The role of dislocation scattering in n -type GaN films by Ng, H. M., Doppalapudi, D., Moustakas, T. D., Weimann, N. G., Eastman, L. F.

“…The lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy doped n type with Si to the levels of…”
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Undoped AlGaN/GaN HEMTs for microwave power amplification by Eastman, L.F., Tilak, V., Smart, J., Green, B.M., Chumbes, E.M., Dimitrov, R., Hyungtak Kim, Ambacher, O.S., Weimann, N., Prunty, T., Murphy, M., Schaff, W.J., Shealy, J.R.

“…Undoped AlGaN/GaN structures are used to fabricate high electron mobility transistors (HEMTs). Using the strong spontaneous and piezoelectric polarization…”
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Comparison of high field electron transport in GaN and GaAs by Foutz, B. E., Eastman, L. F., Bhapkar, U. V., Shur, M. S.

“…An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN and GaAs. In particular, velocity overshoot and electron…”
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Results, Potential and Challenges of High Power GaN-Based Transistors by Eastman, L. F.

“…The fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) employs strong spontaneous and piezoelectric polarization. The material was grown by…”
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Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels by Ardaravičius, L., Ramonas, M., Kiprijanovic, O., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Chen, X., Sun, Y. J.

“…Nanosecond‐pulsed current–voltage measurements were used to study hot‐electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional electron gas…”
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Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels by Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are…”
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Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures by Cha, Ho-Young, Chen, X., Wu, H., Schaff, W. J., Spencer, M. G., Eastman, L. F.

“…Excellent ohmic characteristics for undoped-AlGaN/GaN heterostructures have been achieved by using a Si nano-interlayer: a 1-nm Si layer has been evaporated…”
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AlGaN/GaN heterostructures on insulating AlGaN nucleation layers by Smart, J. A., Schremer, A. T., Weimann, N. G., Ambacher, O., Eastman, L. F., Shealy, J. R.

“…A single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces. The…”
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Self-heating and microwave noise in AlGaN/GaN by Ardaravičius, L., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Equivalent noise temperature and spectral intensity of current fluctuations at 10 GHz frequency are investigated for Al0.15Ga0.85N/GaN channels. Dependence on…”
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Effects of γ-irradiation on AlGaN/GaN-based HEMTs by Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…γ‐ray radiation effect has been studied on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350…”
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Investigations of MBE grown InN and the influence of sputtering on the surface composition by Krischok, S., Yanev, V., Balykov, O., Himmerlich, M., Schaefer, J.A., Kosiba, R., Ecke, G., Cimalla, I., Cimalla, V., Ambacher, O., Lu, H., Schaff, W.J., Eastman, L.F.

“…In this study InN films with wurtzite structure grown by plasma induced molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy (XPS),…”
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Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors by Garrido, J. A., Foutz, B. E., Smart, J. A., Shealy, J. R., Murphy, M. J., Schaff, W. J., Eastman, L. F., Muñoz, E.

“…The 1/f low-frequency noise characteristics of AlGaN/GaN heterostructure field-effect transistors, grown on sapphire and SiC substrates by molecular beam…”
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Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure by CARIDI, E. A, CHANG, T. Y, GOOSSEN, K. W, EASTMAN, L. F

“…We report the first direct demonstration of a strain-generated built-in electric field in a (111) oriented strained-layer heterostructure. We present a model…”
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CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz by Asif Khan, M., Chen, Q., Shur, M.S., Dermott, B.T., Higgins, J.A., Burm, J., Schaff, W.J., Eastman, L.F.

“…We report on a 0.15-μm gate length AlGaN/GaN doped channel heterostructure field effect transistor (DC-HFET) with maximum frequency of oscillation in excess of…”
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Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures by Schöche, S., Shi, Junxia, Boosalis, A., Kühne, P., Herzinger, C. M., Woollam, J. A., Schaff, W. J., Eastman, L. F., Schubert, M., Hofmann, T.

“…The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640…”
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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy by Murphy, M. J., Chu, K., Wu, H., Yeo, W., Schaff, W. J., Ambacher, O., Eastman, L. F., Eustis, T. J., Silcox, J., Dimitrov, R., Stutzmann, M.

“…High-quality AlGaN/GaN heterostructures have been grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. Polarization effects are exploited to…”
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Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors by Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

“…The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by…”
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