Features Of Photoluminescence And Dielectric Properties Of Glass - Ferroelectric SbSI

The temperature dependence of dielectric properties and photoluminescence (PL) of glass semiconductor SbSI is studied. According to measurements of the dielectric constant and polarization the first-order structural phase transition into the polar state (dipole glass) takes place at T=198 K. A compl...

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Bibliographic Details
Published in:	Journal of Optoelectronics and Advanced Materials Vol. 5; no. 3; pp. 791 - 794
Main Authors:	Babaev, A A, Kamilov, I K, Kallaev, C N, Sultanov, S B, Amirova, A A, Dzhabrailov, A M
Format:	Journal Article
Language:	English
Published:	01-09-2003
Online Access:	Get full text
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Summary:	The temperature dependence of dielectric properties and photoluminescence (PL) of glass semiconductor SbSI is studied. According to measurements of the dielectric constant and polarization the first-order structural phase transition into the polar state (dipole glass) takes place at T=198 K. A complex spectrum of the PL in the glass SbSI is responsible for two types of structural units. A wide radiation band, location, and large PL maximum of the Stokes shift prove the existence of a strong; electron-phonon interaction.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1454-4164