Search Results - "Dyudelev, V. V."
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Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers
Published in Bulletin of the Lebedev Physics Institute (01-12-2023)“…We report the results of a comparison of metal–dielectric mirror coatings for mid-IR quantum-cascade lasers (QCLs). Samples of QCLs with Al 2 O 3 /Ti/Au and…”
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Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers
Published in Bulletin of the Lebedev Physics Institute (01-12-2023)“…Dielectric mirrors for mid-IR quantum cascade lasers are calculated. Optimal dielectric materials are selected to minimize the absorption of laser radiation…”
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Lasing in 9.6-μm Quantum Cascade Lasers
Published in Technical physics (01-10-2018)“…Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 μm at 140 K has been demonstrated. The active area is based on three-phonon resonance…”
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Generation of High-Power Ultrashort Optical Pulses Using a Semiconductor Laser with Controlled Current Pumping
Published in Technical physics (01-12-2017)“…Fiber-coupled semiconductor lasers are studied under pumping with high-power short current pulses. Appropriate parameters of the current pumping make it…”
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Lasing in 9.6-[mu]m Quantum Cascade Lasers
Published in Technical physics (01-10-2018)“…Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 [mu]m at 140 K has been demonstrated. The active area is based on three-phonon resonance…”
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Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range
Published in Technical physics letters (01-05-2010)“…Fast-response, uncooled p - i - n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of…”
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High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm)
Published in Technical physics letters (01-03-2008)“…Use of an external cavity with a grating ensures effective narrowing of the linewidth (∼0.35 nm) of a high-power multimode semiconductor laser with a broad…”
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VCSELs based on arrays of sub-monolayer InGaAs quantum dots
Published in Semiconductors (Woodbury, N.Y.) (01-05-2006)“…Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg…”
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