Search Results - "Dyudelev, V. V."

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    Lasing in 9.6-μm Quantum Cascade Lasers by Babichev, A. V., Gusev, G. A., Sofronov, A. N., Firsov, D. A., Vorob’ev, L. E., Usikova, A. A., Zadiranov, Yu. M., Il’inskaya, N. D., Nevedomskii, V. N., Dyudelev, V. V., Sokolovskii, G. S., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu

    Published in Technical physics (01-10-2018)
    “…Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 μm at 140 K has been demonstrated. The active area is based on three-phonon resonance…”
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    Journal Article
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    Generation of High-Power Ultrashort Optical Pulses Using a Semiconductor Laser with Controlled Current Pumping by Kolykhalova, E. D., Dyudelev, V. V., Zazulin, S. V., Losev, S. N., Deryagin, A. G., Kuchinskii, V. I., Efanov, M. V., Sokolovskii, G. S.

    Published in Technical physics (01-12-2017)
    “…Fiber-coupled semiconductor lasers are studied under pumping with high-power short current pulses. Appropriate parameters of the current pumping make it…”
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  5. 5

    Lasing in 9.6-[mu]m Quantum Cascade Lasers by Babichev, A. V, Gusev, G. A, Sofronov, A. N, Firsov, D. A, Vorob'ev, L. E, Usikova, A. A, Zadiranov, Yu. M

    Published in Technical physics (01-10-2018)
    “…Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 [mu]m at 140 K has been demonstrated. The active area is based on three-phonon resonance…”
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    Journal Article
  6. 6

    Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range by Andreev, I. A., Serebrennikova, O. Yu, Sokolovskii, G. S., Kunitsyna, E. V., Dyudelev, V. V., Gadzhiev, I. M., Deryagin, A. G., Grebenshchikova, E. A., Konovalov, G. G., Mikhailova, M. P., Il’inskaya, N. D., Kuchinskii, V. I., Yakovlev, Yu. P.

    Published in Technical physics letters (01-05-2010)
    “…Fast-response, uncooled p - i - n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of…”
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    High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm) by Vinokurov, D. A., Deryagin, A. G., Dyudelev, V. V., Kuchinskiĭ, V. I., Lyutetskiĭ, A. V., Pikhtin, N. A., Sokolovskiĭ, G. S., Stankevich, A. L., Tarasov, I. S.

    Published in Technical physics letters (01-03-2008)
    “…Use of an external cavity with a grating ensures effective narrowing of the linewidth (∼0.35 nm) of a high-power multimode semiconductor laser with a broad…”
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    VCSELs based on arrays of sub-monolayer InGaAs quantum dots by Blokhin, S. A., Maleev, N. A., Kuz’menkov, A. G., Shernyakov, Yu. M., Novikov, I. I., Gordeev, N. Yu, Dyudelev, V. V., Sokolovskiĭ, G. S., Kuchinskiĭ, V. I., Kulagina, M. M., Maximov, M. V., Ustinov, V. M., Kovsh, A. R., Mikhrin, S. S., Ledentsov, N. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2006)
    “…Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg…”
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