Search Results - "Dyczewski, Jan"

Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure by Grochowski, Jakub, Hanyu, Yuichiro, Abe, Katsumi, Kaczmarski, Jakub, Dyczewski, Jan, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

“…Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are employed in current flat-panel displays. It is known that deposition conditions and…”
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Transparent Amorphous Ru-Si-O Schottky Contacts to In-Ga-Zn-O by Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Dyczewski, Jan, Jung, Wojciech, Dynowska, Elzbieta, Piotrowska, Anna

“…Transparent amorphous oxide semiconductors (TAOSs), such as In-Ga-Zn-O (a-IGZO), are the subject of intensive experimental and theoretical research aimed at…”
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From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates by Borysiewicz, Michał A., Dynowska, Elżbieta, Kolkovsky, Valery, Dyczewski, Jan, Wielgus, Maciej, Kamińska, Eliana, Piotrowska, Anna

“…Thin polycrystalline ZnO films are deposited onto Si (100) substrates by means of DC reactive sputter deposition from a Zn target in an argon–oxygen mixture…”
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