Gas Immersion Laser Doping for superconducting nanodevices

Gas Immersion Laser Doping for superconducting nanodevices

•Superconducting silicon can be grown epitaxially by Gas Immersion Laser Doping.•We have grown superconducting Si/metallic Si bilayers with sharp ohmic interfaces.•Bilayer interface resistance and contact resistance with metals are negligible.•High transparency Josephson junctions were fabricated us...

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Bibliographic Details
Published in:Applied surface science Vol. 302; pp. 209 - 212
Main Authors: Chiodi, F., Grockowiak, A., Duvauchelle, J.E., Fossard, F., Lefloch, F., Klein, T., Marcenat, C., Débarre, D.
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 30-05-2014
Elsevier
Subjects:
Boron
Condensed Matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Josephson junctions
Laser doping
Nanostructures
Physics
Silicon
Superconductivity
Josephson junctions
Boron
Silicon
Nanostructures
Laser doping
Superconductivity
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Summary:•Superconducting silicon can be grown epitaxially by Gas Immersion Laser Doping.•We have grown superconducting Si/metallic Si bilayers with sharp ohmic interfaces.•Bilayer interface resistance and contact resistance with metals are negligible.•High transparency Josephson junctions were fabricated using standard processes.•Junctions 200–500nm long are superconducting at low temperature. We have conceived and fabricated Superconductor/Normal metal/Superconductor Josephson junctions made entirely of boron doped Silicon. We have used Gas Immersion Laser Doping to fabricate SN bilayers with good ohmic interfaces and well controlled concentration and doping depth. Standard fabrication processes, optimised for silicon, were employed to nanostructure the bilayers without affecting their transport properties. The junctions thus fabricated are proximity superconducting and show well understood I–V characteristics. This research opens the road to all-silicon, non-dissipative, Josephson Field Effect Transistors.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.10.101