Search Results - "Dutartre, D."

Scoring Cercospora Leaf Spot on Sugar Beet: Comparison of UGV and UAV Phenotyping Systems by Jay, S, Comar, A, Benicio, R, Beauvois, J, Dutartre, D, Daubige, G, Li, W, Labrosse, J, Thomas, S, Henry, N, Weiss, M, Baret, F

“…Selection of sugar beet (Beta vulgaris L.) cultivars that are resistant to Cercospora Leaf Spot (CLS) disease is critical to increase yield. Such selection…”
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0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

“…This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f T /f MAX )…”
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Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains by Hartmann, J.M., Benevent, V., Barnes, J.P., Veillerot, M., Lafond, D., Damlencourt, J.F., Morvan, S., Prévitali, B., Andrieu, F., Loubet, N., Dutartre, D.

“…► Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes. ► “Mushroom-free” Si raised sources and drains; conformal growth along spacers. ► SiGe:B CSEGE:…”
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BEOL Process Effects on ePCM Reliability by Redaelli, A., Gandolfo, A., Samanni, G., Gomiero, E., Petroni, E., Scotti, L., Lippiello, A., Mattavelli, P., Jasse, J., Codegoni, D., Serafini, A., Ranica, R., Boccaccio, C., Sandrini, J., Berthelon, R., Grenier, J.-C., Weber, O., Turgis, D., Valery, A., Medico, S. Del, Caubet, V., Reynard, J.-P., Dutartre, D., Favennec, L., Conte, A., Disegni, F., De Tomasi, M., Ventre, A., Baldo, M., Ielmini, D., Maurelli, A., Ferreira, P., Arnaud, F., Piazza, F., Cappelletti, P., Annunziata, R., Gonella, R.

“…The effect of back-end of line (BEOL) process on cell performance and reliability of Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM) is…”
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Improving Ge-rich GST ePCM reliability through BEOL engineering by Redaelli, A., Gandolfo, A., Samanni, G., Gomiero, E., Petroni, E., Scotti, L., Lippiello, A., Mattavelli, P., Jasse, J., Codegoni, D., Serafini, A., Ranica, R., Boccaccio, C., Sandrini, J., Berthelon, R., Grenier, JC, Weber, O., Turgis, D., Valery, A., Del Medico, S., Caubet, V., Reynard, JP, Dutartre, D., Favennec, L., Conte, A., Disegni, F., De Tomasi, M., Ventre, A., Baldo, M., Ielmini, D., Maurelli, A., Ferreira, P., Arnaud, F., Piazza, F., Cappelletti, P., Annunziata, R., Gonella, R.

“…This paper discusses the effect of back-end of line (BEOL) process on cell performance for a Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM). The…”
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Silicon-on-Nothing (SON)-an innovative process for advanced CMOS by Jurczak, M., Skotnicki, T., Paoli, M., Tormen, B., Martins, J., Regolini, J.L., Dutartre, D., Ribot, P., Lenoble, D., Pantel, R., Monfray, S.

“…A novel CMOS device architecture called silicon on nothing (SON) is proposed, which allows extremely thin (in the order of a few nanometers) buried dielectrics…”
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230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications by Chevalier, P., Fellous, C., Rubaldo, L., Pourchon, F., Pruvost, S., Beerkens, R., Saguin, F., Zerounian, N., Barbalat, B., Lepilliet, S., Dutartre, D., Celi, D., Telliez, I., Gloria, D., Aniel, F., Danneville, F., Chantre, A.

“…This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the…”
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Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices by Jurczak, M., Skotnicki, T., Gwoziecki, R., Paoli, M., Tormen, B., Ribot, P., Dutartre, D., Monfray, S., Galvier, J.

“…A new concept of dielectric pockets is proposed allowing suppression of short-channel effects (SCEs) and DIBL without increasing the channel doping. The…”
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A selective epitaxy collector module for high-speed Si/SiGe:C HBTs by Geynet, B., Chevalier, P., Brossard, F., Vandelle, B., Schwartzmann, T., Buczko, M., Avenier, G., Dutartre, D., Dambrine, G., Danneville, F., Chantre, A.

“…This paper presents the results of investigations on high-speed self-aligned Si/SiGe:C HBTs featuring a selective epitaxial growth of the collector. We detail…”
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Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD by Ribot, P, Dutartre, D

“…Low-temperature epitaxial depositions are greatly attractive in the way of device fabrication, in order to improve electrical performances of advanced…”
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Emerging silicon-on-nothing (SON) devices technology by Monfray, S., Skotnicki, T., Fenouillet-Beranger, C., Carriere, N., Chanemougame, D., Morand, Y., Descombes, S., Talbot, A., Dutartre, D., Jenny, C., Mazoyer, P., Palla, R., Leverd, F., Le Friec, Y., Pantel, R., Borel, S., Louis, D., Buffet, N.

“…In this paper we explain the advantages of very thin layers (in the channel and in the BOX) of the silicon-on-nothing (SON) transistors. Electrical results are…”
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Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution by Bidal, G., Loubet, N., Fenouillet-Beranger, C., Denorme, S., Perreau, P., Fleury, D., Clement, L., Laviron, C., Leverd, F., Gouraud, P., Barnola, S., Beneyton, R., Torres, A., Duluard, C., Chapon, J.D., Orlando, B., Salvetat, T., Grosjean, M., Deloffre, E., Pantel, R., Dutartre, D., Monfray, S., Ghibaudo, G., Boeuf, F., Skotnicki, T.

“…This work proposes a planar fully depleted “folded” technology integrated on bulk substrate as an innovative solution for upcoming low power nodes to enhance…”
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High-Performance High- K/Metal Planar Self-Aligned Gate-All-Around CMOS Devices by Pouydebasque, A., Denorme, S., Loubet, N., Wacquez, R., Bustos, J., Leverd, F., Deloffre, E., Barnola, S., Dutartre, D., Coronel, P., Skotnicki, T.

“…By introducing high- K dielectrics and metal gate in our planar self-aligned gate-all-around (GAA) fabrication process, we have successfully fabricated sub-35…”
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Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films by Morris, S., Le Cunff, D., Ristoiu, D., Vachellerie, V., Deleglise, F., Dutartre, D.

“…We use a novel analytical technique, previously shown to be able to decouple germanium and boron contents, to measure simultaneously the germanium and carbon…”
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A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters by Jouan, S., Planche, R., Baudry, H., Ribot, P., Chroboczek, J.A., Dutartre, D., Gloria, D., Laurens, M., Llinares, P., Marty, M., Monroy, A., Morin, C., Pantel, R., Perrotin, A., de Pontcharro, J., Regolini, J.L., Vincent, G., Chantre, A.

“…A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is…”
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Simultaneous optical measurement of Ge content and carbon doping in strained epitaxial SiGe films by Morris, S., Le Cunff, D., Ristoiu, D., Vachellerie, V., Deleglise, F., Dutartre, D.

“…We use an analytical technique, previously shown to be able to decouple germanium and boron contents, to measure simultaneously the germanium and carbon…”
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Thermal and chemical loading effects in non selective Si/SiGe epitaxy by Fellous, C, Romagna, F, Dutartre, D

“…Rapid thermal reduced pressure chemical vapour deposition of non-selective Si and SiGe epitaxy is used for the base formation in the fabrication of high…”
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Selective SiGe epitaxy by rtcvd for new device architectures by Ribot, P, Monfray, S, Skotnicki, T, Dutartre, D

“…CMOS technologies and devices are approaching their theoretical limits such as optical lithography, gate oxide thickness, etc. Consequently, new efforts are…”
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Inelastic electron scattering observation using energy filtered transmission electron microscopy for silicon–germanium nanostructures imaging by Pantel, R, Jullian, S, Delille, D, Dutartre, D, Chantre, A, Kermarrec, O, Campidelli, Y, Kwakman, L.F.T.Z

“…This paper presents a new technique using energy filtered TEM (EFTEM) for inelastic electron scattering contrast imaging of Germanium distribution in Si–SiGe…”
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Schottky barrier heights of W on Si1-xGex alloys by AUBRY, V, MEYER, F, WARREN, P, DUTARTRE, D

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