Search Results - "Dussaigne, Amélie"

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy by Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin

“…Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range…”
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Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors by Mrad, Mrad, Licitra, Christophe, Dussaigne, Amélie, Yon, Victor, Richy, Jérôme, Lafossas, Matthieu, Kanyandekwe, Joel, Feuillet, Guy, Charles, Matthew

“…•Ga pollution in CCS reactor strongly affects the growth process stability of InGaN.•Ga pollution decreases In incorporation and increases InGaN layer…”
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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters by Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, Raynaud, Christine

“…Aluminum nitride (AlN)-based acoustic filters are key devices of radio-frequency communications. However, the performance of electroacoustic resonators remains…”
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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications by Salomon, Damien, Dussaigne, Amelie, Lafossas, Matthieu, Durand, Christophe, Bougerol, Catherine, Ferret, Pierre, Eymery, Joel

“…GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiN x layer formed…”
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GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures by Avit, Geoffrey, André, Yamina, Bougerol, Catherine, Castelluci, Dominique, Dussaigne, Amélie, Ferret, Pierre, Gaugiran, Stéphanie, Gayral, Bruno, Gil, Evelyne, Lee, Yann, Ramdani, M. Reda, Roche, Elissa, Trassoudaine, Agnès

“…Selective area growth hydride vapor phase epitaxy (SAG-HVPE) and metal organic vapor phase epitaxy (MOVPE) processes are coupled for the synthesis of high…”
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High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate by Dussaigne, Amélie, Gonschorek, Marcus, Malinverni, Marco, Py, Marcel A, Martin, Denis, Mouti, Anas, Stadelmann, Pierre, Grandjean, Nicolas

“…High mobility Al 0.28 Ga 0.72 N/GaN two-dimensional electron gas (2DEG) is achieved on (111) oriented single crystal diamond substrate. The surface morphology…”
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Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103 , 032102 (2013)] by Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin

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Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on $a$-Plane GaN Substrates by Corfdir, Pierre, Dussaigne, Amélie, Teisseyre, Henryk, Suski, Tadeusz, Grzegory, Izabella, Lefebvre, Pierre, Giraud, Etienne, Shahmohammadi, Mehran, Phillips, Richard T, Ganiere, Jean-Daniel, Grandjean, Nicolas, Deveaud, Benoît

“…This article presents the dynamics of excitons in $a$-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all…”
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Nonlinear emission properties of an optically anisotropic GaN-based microcavity by Levrat, Jacques, Rossbach, Georg, Dussaigne, Amélie, Cosendey, Gatien, Glauser, Marlene, Cobet, Munise, Butté, Raphaël, Grandjean, Nicolas, Teisseyre, Henryk, Boćkowski, Michał, Grzegory, Izabella, Suski, Tadeusz

“…The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite…”
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Nanoscale Mapping of the Structural Relaxation in Microstructured In x Ga 1− x N Pseudosubstrates by Scanning X‐ray Diffraction Microscopy by Zatterin, Edoardo M., Barbier, Frédéric, Torrengo, Simona, Ferret, Pierre, Veux, Guillaume, Martin, Brigitte, Lévy, François, Schülli, Tobias U., Dussaigne, Amélie

“…The technological advancement of mobile devices for virtual and augmented reality requires displays that are faster, more energy‐efficient, and of higher…”
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Direct Imaging of p–n Junction in Core–Shell GaN Wires by Tchoulfian, P, Donatini, F, Levy, F, Dussaigne, A, Ferret, P, Pernot, J

“…While core–shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present…”
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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS 2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters by Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, Raynaud, Christine

“…Aluminum nitride (AlN)-based acoustic filters are key devices of radio-frequency communications. However, the performance of electroacoustic resonators remains…”
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells by Fedichkin, F., Andreakou, P., Jouault, B., Vladimirova, M., Guillet, T., Brimont, C., Valvin, P., Bretagnon, T., Dussaigne, A., Grandjean, N., Lefebvre, P.

“…We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially and…”
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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires by Tchoulfian, P., Donatini, F., Levy, F., Amstatt, B., Dussaigne, A., Ferret, P., Bustarret, E., Pernot, J.

“…Combined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches,…”
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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots by Bretagnon, Thierry, Lefebvre, Pierre, Valvin, Pierre, Bardoux, Richard, Guillet, Thierry, Taliercio, Thierry, Gil, Bernard, Grandjean, Nicolas, Semond, Fabrice, Damilano, B., Dussaigne, Amélie, Massies, Jean

“…Wurtzite GaN∕AlN quantum dots (QDs) are studied by time-resolved photoluminescence. Careful measurements allow us to reach the regime of a single electron-hole…”
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Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a -plane GaN by Corfdir, P., Ristić, J., Lefebvre, P., Zhu, T., Martin, D., Dussaigne, A., Ganière, J. D., Grandjean, N., Deveaud-Plédran, B.

“…Time-resolved cathodoluminescence at 27 K has been performed on a -plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination…”
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Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector by Byrne, Declan, Natali, Franck, Damilano, Benjamin, Dussaigne, Amelie, Grandjean, Nicolas, Massies, Jean

“…A blue resonant cavity light emitting diode with a 50% Al-content crack-free GaN/AlGaN distributed Bragg reflector is reported. The structure shows excellent…”
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Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy by Richter, Carsten, Kaganer, Vladimir M, Even, Armelle, Dussaigne, Amélie, Ferret, Pierre, Barbier, Frédéric, Vaillant, Yves-Matthieu Le, Schülli, Tobias U

“…Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and…”
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Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures by Corfdir, P., Levrat, J., Dussaigne, A., Lefebvre, P., Teisseyre, H., Grzegory, I., Suski, T., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B.

“…Both weakly and strongly confined excitons are studied by time-resolved photoluminescence in a nonpolar nitride-based heterostructure grown by molecular beam…”
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Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation by Bretagnon, Thierry, Kalliakos, Sokratis, Lefebvre, Pierre, Valvin, Pierre, Gil, Bernard, Grandjean, Nicolas, Dussaigne, Amelie, Damilano, B., Massies, Jean

“…The time dependence of the photoluminescence of GaN/AlN quantum dots (QD’s) after high photoexcitation is examined on a large time scale. A continuous change…”
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