Search Results - "Dussaigne, A."

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate by Even, A., Laval, G., Ledoux, O., Ferret, P., Sotta, D., Guiot, E., Levy, F., Robin, I. C., Dussaigne, A.

“…The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN heterostructure was investigated. Three types of InGaN pseudosubstrates…”
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Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice by Dussaigne, A., Barbier, F., Samuel, B., Even, A., Templier, R., Lévy, F., Ledoux, O., Rozhavskaia, M., Sotta, D.

“…•InGaN/GaN superlattice was used as a buffer layer on InGaN pseudo-substrate.•The V pit density was reduced by one order of magnitude.•(0 0 2) XRD ω scan…”
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Direct Imaging of p–n Junction in Core–Shell GaN Wires by Tchoulfian, P, Donatini, F, Levy, F, Dussaigne, A, Ferret, P, Pernot, J

“…While core–shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present…”
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells by Fedichkin, F., Andreakou, P., Jouault, B., Vladimirova, M., Guillet, T., Brimont, C., Valvin, P., Bretagnon, T., Dussaigne, A., Grandjean, N., Lefebvre, P.

“…We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially and…”
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Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field by Simeonov, D., Dussaigne, A., Butté, R., Grandjean, N.

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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires by Tchoulfian, P., Donatini, F., Levy, F., Amstatt, B., Dussaigne, A., Ferret, P., Bustarret, E., Pernot, J.

“…Combined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches,…”
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GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy by Dussaigne, A., Malinverni, M., Martin, D., Castiglia, A., Grandjean, N.

“…GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in…”
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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots by Bretagnon, Thierry, Lefebvre, Pierre, Valvin, Pierre, Bardoux, Richard, Guillet, Thierry, Taliercio, Thierry, Gil, Bernard, Grandjean, Nicolas, Semond, Fabrice, Damilano, B., Dussaigne, Amélie, Massies, Jean

“…Wurtzite GaN∕AlN quantum dots (QDs) are studied by time-resolved photoluminescence. Careful measurements allow us to reach the regime of a single electron-hole…”
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Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a -plane GaN by Corfdir, P., Ristić, J., Lefebvre, P., Zhu, T., Martin, D., Dussaigne, A., Ganière, J. D., Grandjean, N., Deveaud-Plédran, B.

“…Time-resolved cathodoluminescence at 27 K has been performed on a -plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination…”
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Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter by Damilano, B., Dussaigne, A., Brault, J., Huault, T., Natali, F., Demolon, P., De Mierry, P., Chenot, S., Massies, J.

“…A monolithic white light emitting diode using a (Ga,In)N/GaN multiple quantum well (MQW) light converter is demonstrated. Blue photons emitted under electrical…”
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In surface segregation in InGaN/GaN quantum wells by Dussaigne, A., Damilano, B., Grandjean, N., Massies, J.

“…We investigate both theoretically and experimentally the effects of the In surface segregation in InGaN/GaN quantum wells (QWs). It is shown that this…”
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High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy by Natali, F., Byrne, D., Dussaigne, A., Grandjean, N., Massies, J., Damilano, B.

“…We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free AlxGa1−xN/GaN distributed Bragg reflectors (DBRs) with high-Al…”
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Control of the polarity of GaN films using an Mg adsorption layer by Grandjean, N., Dussaigne, A., Pezzagna, S., Vennéguès, P.

“…The polarity of GaN epilayers grown by molecular beam epitaxy is controlled using Mg. This is achieved by simultaneously exposing the surface to Mg and NH 3…”
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Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green by Mutta, G. R., Ruterana, P., Doualan, J. L., Chauvat, M. P., Ivaldi, F., Kret, S., Kaufmann, N. A. K., Dussaigne, A., Martin, D., Grandjean, N.

“…Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and…”
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Nonpolar GaN-based microcavity using AlN∕GaN distributed Bragg reflector by Zhu, T., Dussaigne, A., Christmann, G., Pinquier, C., Feltin, E., Martin, D., Butté, R., Grandjean, N.

“…Nonpolar GaN based microcavity (MC) made of a bottom AlN∕GaN distributed Bragg reflector (DBR) and a top dielectric SiO2∕SiNx DBR has been fabricated on…”
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Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy by Potin, V., Hahn, E., Rosenauer, A., Gerthsen, D., Kuhn, B., Scholz, F., Dussaigne, A., Damilano, B., Grandjean, N.

“…We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples…”
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Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation by Bretagnon, Thierry, Kalliakos, Sokratis, Lefebvre, Pierre, Valvin, Pierre, Gil, Bernard, Grandjean, Nicolas, Dussaigne, Amelie, Damilano, B., Massies, Jean

“…The time dependence of the photoluminescence of GaN/AlN quantum dots (QD’s) after high photoexcitation is examined on a large time scale. A continuous change…”
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AlGaN-Based Linear Array for UV Solar-Blind Imaging From 240 to 280 nm by Mazzeo, G., Reverchon, J.-L., Duboz, J.-Y., Dussaigne, A.

“…The realization of a linear array of 300 pixels, with a 26-mum pitch, based on Al x Ga 1-x N metal-semiconductor-metal photodetectors, is described. The…”
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Dynamics of AlGaN based detectors in the deep-UV by Mazzeo, G., Reverchon, J.-L., Conte, G., Dussaigne, A., Duboz, J.-Y.

“…The photoconductive dynamic response of AlGaN based UV detectors to 193 nm excimer laser radiation is presented. Two different devices have been realized,…”
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Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes by Dalmasso, S., Damilano, B., Pernot, C., Dussaigne, A., Byrne, D., Grandjean, N., Leroux, M., Massies, J.

“…Multicolor, multi‐quantum well light emitting diodes have been fabricated by molecular beam epitaxy by inserting quantum wells of various widths in the active…”
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