Search Results - "Dusciac, D."

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  1. 1

    High energy photon reference for radiation protection: technical design of the LINAC beam and ionization chambers; and calculation of monoenergetic conversion coefficients by Dusciac, D., Bordy, J.-M., Daures, J., Blideanu, V.

    Published in EPJ Web of Conferences (01-01-2016)
    “…In this work, we present the results of the first part of a research project aimed at offering a complete response to dosimeters providers and nuclear…”
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    Journal Article Conference Proceeding
  2. 2

    Thermal decomposition of alkoxy monolayers grafted on silicon: A mechanistic model by Dusciac, D., Henry de Villeneuve, C., Allongue, P., Ozanam, F., Chazalviel, J.-N.

    Published in Surface science (01-03-2013)
    “…A recent spectroscopic study showed that alkoxy monolayers grafted on a (111) silicon surface thermally decompose in the 200–400°C range by fragmentation of…”
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    Journal Article
  3. 3

    Design and characterization of a near-field gamma imager for in situ measurements of fuel rod deformations by Amoyal, G., Schoepff, V., Carrel, F., Morenas, M., Dusciac, D.

    “…A prototype of gamma imaging system has been developed for the detection of fuel rod deformations, based on the WidePIX hybrid pixel detector, associated with…”
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    Journal Article
  4. 4

    Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2 by Dusciac, Dorin, Brizé, Virginie, Chazalviel, Jean-Noël, Lai, Yun-Feng, Roussel, Hervé, Blonkowski, Serge, Schafranek, Robert, Klein, Andreas, Henry de Villeneuve, Catherine, Allongue, Philippe, Ozanam, François, Dubourdieu, Catherine

    Published in Chemistry of materials (28-08-2012)
    “…Engineering of the silicon/high-permittivity (high-κ) dielectric interface by grafting an ultrathin organic layer on the silicon surface before HfO2 deposition…”
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    Journal Article
  5. 5

    Study of electrically active defects in high mobility HfO/sub 2/ MOSFETs by Militaru, L., Weber, O., Muller, M., Ducroquet, F., Dusciac, D., Plossu, C., Ernst, T., Guillaumot, B., Deleonibus, S., Skotnicki, T.

    “…We present a detailed analysis of electrically active gate oxide defects on damascene CMOS devices with a HfO/sub 2/ gate dielectric and a TiN/W gate…”
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    Conference Proceeding