Search Results - "Duru, R."

Advances in the Modification of Starch via Esterification for Enhanced Properties by Otache, M. A., Duru, R. U., Achugasim, O., Abayeh, O. J.

“…Starch, a renewable polysaccharide, has attracted growing interest as an alternative industrial feedstock due to its biodegradability, low cost, and readily…”
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Challenges and prospects of plastic waste management in Nigeria by Duru, R. U., Ikpeama, E. E., Ibekwe, J. A.

“…The combined properties of low cost, lightweight, and resistance to chemicals and corrosion has increased the use of plastic materials for packaging and…”
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Investigation of reoxidation mechanisms in nitrided tunnel oxides for Flash memory applications by Breil, N., Cassagnard, L., Arsac, C., Duru, R., Briend, G.

“…In the context of Flash memory performance improvement, the reoxidation of nitrided tunnel oxides is investigated. The impact of reoxidation on the spatial…”
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Weight-scale, XRR and corona charge method on back-end dielectrics for 65 and 45 nm technology nodes by Fossati, D., Duru, R., Desmercières, S., Royer, J.-C.

“…The monitoring of the back-end dielectrics for 65 and 45 nm technology nodes is of great interest to ensure the integration of those materials into damascene…”
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A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage by Sacchettini, Y., Carrere, J.-P., Doyen, C., Duru, R., Courouble, K., Ricq, S., Goiffon, V., Magnan, P.

“…Plasma process interaction with BSI image sensor is for the first time analyzed. The dark current degradation is modulated by the nature of the anti-reflective…”
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P-88: Supporting Intestinal Families in the Virtual World During the COVID-19 Pandemic by L, Hogg, J, Taylor, J, Logan, L, Morris, R, Chana, R, Duru, R, Martin, K, Martin, S, Pugh, G, Gupte

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1.62\mu \mathrm Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared by Steckel, J. S., Josse, E., Pattantyus-Abraham, A. G., Bidaud, M., Mortini, B., Bilgen, H., Arnaud, O., Allegret-Maret, S., Saguin, F., Mazet, L., Lhostis, S., Berger, T., Haxaire, K., Chapelon, L. L., Parmigiani, L., Gouraud, P., Brihoum, M., Bar, P., Guillermet, M., Favreau, S., Duru, R., Fantuz, J., Ricq, S., Ney, D., Hammad, I., Roy, D., Arnaud, A., Vianne, B., Nayak, G., Virollet, N., Farys, V., Malinge, P., Tournier, A., Lalanne, F., Crocherie, A., Galvier, J., Rabary, S., Noblanc, O., Wehbe-Alause, H., Acharya, S., Singh, A., Meitzner, J., Aher, D., Yang, H., Romero, J., Chen, B., Hsu, C., Cheng, K. C., Chang, Y., Sarmiento, M., Grange, C., Mazaleyrat, E., Rochereau, K.

“…We have developed a 1.62\mu \mathrm{m} pixel pitch global shutter sensor optimized for imaging in the near infrared (NIR) and shortwave infrared (SWIR) regions…”
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Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer by Oudot, E., Gros-Jean, M., Courouble, K., Bertin, F., Duru, R., Rochat, N., Vallée, Corentin

“…HfO2 synthesized by atomic layer deposition (ALD) can be used as a passivation material for photodetectors. This paper shows a significant reduction of density…”
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Interest of SiCO low k=4.5 spacer deposited at low temperature (400°C) in the perspective of 3D VLSI integration by Benoit, D., Mazurier, J., Varadarajan, B., Chhun, S., Lagrasta, S., Gaumer, C., Galpin, D., Fenouillet-Beranger, C., Vo-Thanh, D., Barge, D., Duru, R., Beneyton, R., Gong, B., Sun, N., Chauvet, N., Ruault, P., Winandy, D., van Schravendijk, B., Meijer, P., Hinsinger, O.

“…For the first time, the interest of a new SiCO low-k spacer material deposited at 400°C is evaluated in the perspective of a 3D VLSI integration. The benefits…”
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HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology by Le Cunff, D., Duru, R., Durand, A., Pernot, F., Wormington, M., Tokar, A., Rouchon, D., Gergaud, P.

“…This paper describes specific applications illustrating the use of High Resolution X-Ray Diffraction (HRXRD) for the inline control of advanced logic…”
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Benefit of combining metrology techniques for thin SiGe:B layers by Le Cunff, D., Nguyen, T., Duru, R., Abbate, F., Hoglund, J., Laurent, N., Pernot, F., Wormington, M.

“…This paper presents a study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin Silicon Germanium (SiGe)…”
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MBIR for in-line doping metrology of epitaxial SiGe:B and SiC:P layers by Duru, R., Le-Cunff, D., Nguyen, T., Barge, D., Campidelli, Y., Laurent, N., Hoglund, J.

“…This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of…”
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Impact of Focused Education on Adult Patients with Type 2 Diabetes in Primary Healthcare by Duru, Chidi R

“…The purpose of this study was to provide focused education to patients with type 2 diabetes in a primary healthcare setting to improve medication adherence,…”
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Measurement of rigidity in Parkinson's disease by Prochazka, Arthur, Bennett, David J., Stephens, Marilee J., Patrick, Susan K., Sears-Duru, Rosemary, Roberts, Ted, Jhamandas, Jack H.

“…Clinical assessment of rigidity in parkinsonian patients is largely qualitative. The reliability and validity of the assessments are sometimes in doubt…”
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450 GHz f} SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node by Gauthier, A., Borrel, J., Chevalier, P., Avenier, G., Montagne, A., Juhel, M., Duru, R., Clement, L. -R., Borowiak, C., Buczko, M., Gaquiere, C.

“…This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous…”
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Review of applications of Defect Photoluminescence Imaging (DPLI) during IC processing by Jastrzebski, L., Roffarello, Nadudvari, G., Kiss, Z., Lajtos, I., Pongracz, A., Molnar, G., Nagy, M., Dudas, L., Basa, P., Greenwood, B., Duru, R., Gambino, J., Le-Cunff, D., Cannac, M., Joblot, S., Mica, I., Polignano, M. L., Galbiati, A., Monge, P.

“…As Si is an indirect band gap material, the PL generated by phonon assisted band-to-band (B2B) radiative recombination (of energy equal to energy gap of Si) is…”
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Full Copper Electrochemical Mechanical Planarization (Ecmp) as a Technology Enabler for the 45 and 32nm Nodes by Mellier, M., Berger, T., Duru, R., Zaleski, M., Luche, M.C., Rivoire, M., Goldberg, C., Wyborn, G., Chang, K.-L., Wang, Y., Ripoche, V., Tsai, S., Thothadri, M., Hsu, W.-Y., Chen, L.

“…In this work, we demonstrate the capability of Ecmp to meet the 45 nm and 32 nm technology node requirements in terms of topography behavior, the related…”
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