Search Results - "Durğun Özben, E."

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs by Lopes, J.M.J., Durğun Özben, E., Roeckerath, M., Littmark, U., Lupták, R., Lenk, St, Luysberg, M., Besmehn, A., Breuer, U., Schubert, J., Mantl, S.

“…In this contribution we present results on the structural and electrical properties of amorphous REScO 3 ( RE = La, Gd, Tb, Sm) and LaLuO 3 thin films. The…”
Get full text

LaScO3 as a higher-κ dielectric for p-MOSFETs by DURGUN ÖZBEN, E, SCHNEE, M, MANTL, S, NICHAU, A, MUSSMANN, V, LUPTAK, R, LOPES, J. M. J, LENK, St, BOURDELLE, K. K, ZHAO, Q. T, SCHUBERT, J

Get full text

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process by Nichau, A., Durğun Özben, E., Schnee, M., Lopes, J.M.J., Besmehn, A., Luysberg, M., Knoll, L., Habicht, S., Mussmann, V., Luptak, R., Lenk, St, Rubio-Zuazo, J., Castro, G.R., Buca, D., Zhao, Q.T., Schubert, J., Mantl, S.

“…► MOSFETs with LaLuO3 ternary rare earth oxide. ► High temperature CMOS compatible processing up to 1000°C/5s. ► EELS and HAXPES interface and composition…”
Get full text

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors by Roeckerath, M., Lopes, J. M. J., Özben, E. Durğun, Urban, C., Schubert, J., Mantl, S., Jia, Y., Schlom, D. G.

“…Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction…”
Get full text

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon by Roeckerath, M., Lopes, J. M. J., Durğun Özben, E., Sandow, C., Lenk, S., Heeg, T., Schubert, J., Mantl, S.

“…Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by…”
Get full text

High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack by MINAMISAWA, R. A, SCHMIDT, M, DURGUN ÖZBEN, E, LOPES, J. M. J, HARTMANN, J. M, BOURDELLE, K. K, SCHUBERT, J, ZHAO, Q. T, BUCA, D, MANTL, S

Get full text

Behavior of charges locally injected into nanothin high-k SmScO3 dielectric by Gushchina, E. V., Dunaevskii, M. S., Alekseev, P. A., Durğun Özben, E., Makarenko, I. V., Titkov, A. N.

“…The behavior of charges locally injected from the probe of an atomic force microscope into nanothin films of high- k SmScO 3 dielectric deposited on a silicon…”
Get full text

LaScO 3 as a higher- κ dielectric for p-MOSFETs by Durğun Özben, E., Schnee, M., Nichau, A., Mussmann, V., Lupták, R., Lopes, J.M.J., Lenk, St, Bourdelle, K.K., Zhao, Q.T., Schubert, J., Mantl, S.

“…[Display omitted] ► LaScO 3 was successfully integrated in p-MOSFET devices on FD-SOI. ► 0.65 nm EOT was achieved in MOScap-devices. ► Steep inverse…”
Get full text

High mobility Si-Ge channels and novel high-k materials for nanomosfets by Yu, W, Zhang, B, Durgun-Özben, E, Minamisawa, R A, Luptak, R, Hagedorn, M, Holländer, B, Schubert, J, Hartmann, J M, Bourdelle, K K, Zhao, Q T, Buca, D, Mantl, S

“…The implementation of more powerful materials into leading edge CMOS devices allows performance improvements without scaling and without changing the circuit…”
Get full text

SmScO 3 thin films as an alternative gate dielectric by Durğun Özben, E., Lopes, J. M. J., Roeckerath, M., Lenk, St, Holländer, B., Jia, Y., Schlom, D. G., Schubert, J., Mantl, S.

“…Samarium scandate thin films deposited on (100) Si have been investigated structurally and electrically. Rutherford backscattering spectrometry and…”
Get full text

Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process by ÖZBEN, E. Durgun, LOPES, J. M. J, NICHAU, A, SCHNEE, M, LENK, S, BESMEHN, A, BOURDELLE, K. K, ZHAO, Q. T, SCHUBERT, J, MANTL, S

Get full text

MOSFETs with high mobility channel materials and higher-k/metal gate stack by Yu, W, Özben, E Durğun, Zhang, B, Nichau, A, Lopes, J M J, Lupták, R, Lenk, St, Hartmann, J M, Buca, D, Bourdelle, K K, Schubert, J, Zhao, Q T, Mantl, S

“…Integration of lanthanum lutetium oxide (LaLuO 3 ) with a κ value of 30 is demonstrated on high mobility biaxially tensile strained Si (sSi) and compressively…”
Get full text

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs by Nichau, A, Ozben, E Durğun, Schnee, M, Lopes, J M J, Besmehn, A, Luysberg, M, Knoll, L, Habicht, S, Mussmann, V, Luptak, R, Lenk, S, Rubio-Zuazo, J, Castro, G R, Buca, D, Zhao, Q T, Schubert, J, Mantl, S

“…The chemical reactions at the higher-k LaLuO 3 /Ti 1 N X /poly-Si gate stack interfaces are studied after high temperature treatment. A Ti-rich TiN metal layer…”
Get full text

Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate by Alekseev, P. A., Dunaevskii, M. S., Gushchina, E. V., Özben, E. Dürgun, Lahderanta, E., Titkov, A. N.

“…A charge leakage in LaScO 3 nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO 3 layer to the LaScO…”
Get full text

High mobility strained Si 0.5Ge 0.5/SSOI short channel field effect transistors with TiN/GdScO 3 gate stack by Minamisawa, R.A., Schmidt, M., Durgun Özben, E., Lopes, J.M.J., Hartmann, J.M., Bourdelle, K.K., Schubert, J., Zhao, Q.T., Buca, D., Mantl, S.

“…Short channel p-type metal-oxide-semiconductor field effect transistors (MOSFETs) with GdScO 3 gate dielectric were fabricated on a quantum well strained…”
Get full text

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics by Lopes, J. M. J., Littmark, U., Roeckerath, M., Durǧun Özben, E., Lenk, S., Breuer, U., Besmehn, A., Stärk, A., Grande, P. L., Sortica, M. A., Radtke, C., Schubert, J., Mantl, S.

“…The influence of post-deposition oxygen anneals on the properties of amorphous LaScO 3 films on Si(100) is reported. The use of an isotopically ( 18 O 2 )…”
Get full text

Isotopic labeling study of oxygen diffusion in amorphous LaSc03 high-κ films on Si(100) and its effects on the electrical characteristics by LOPES, J. M. J, LITTMARK, U, RADTKE, C, SCHUBERT, J, MANTL, S, ROECKERATH, M, DURGUN ÖZBEN, E, LENK, S, BREUER, U, BESMEHN, A, STÄRK, A, GRANDE, P. L, SORTICA, M. A

Get full text

Behavior of charges locally injected into nanothin high-k SmSc[O.sub.3] dielectric by Gushchina, E.V, Dunaevskii, M.S, Alekseev, P.A, Ozben, E. Durgun, Makarenko, I.V, Titkov, A.N

“…The behavior of charges locally injected from the probe of an atomic force microscope into nanothin films of high-k SmSc[O.sub.3] dielectric deposited on a…”
Get full text

Rare-earth based alternative gate dielectrics for future integration in MOSFETs by Lopes, J.M.J., Durgun-Ozben, E., Roeckerath, M., Littmark, U., Luptak, R., Lenk, St, Besmehn, A., Breuer, U., Schubert, J., Mantl, S.

“…In this contribution, results on the structural and electrical properties of high-κ REScO 3 (RE = La, Gd, Tb, Sm) and LaLuO 3 amorphous thin films are…”
Get full text

Integration of hbox LaLuO 3 Unknown character ( Kappa similar to hbox 30 ) as High- Kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process by Durgun Ozben, E, Lopes, JMJ, Nichau, A, Schnee, M, Lenk, S, Besmehn, A, Bourdelle, K K, Zhao, Q T, Schubert, J, Mantl, S

“…The integration of lanthanum lutetium oxide ( hbox LaLuO 3 ) with a Kappa value of 30 is, for the first time, demonstrated on strained and unstrained SOI…”
Get full text