Search Results - "Dupuis, Russell D."

History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes by Dupuis, R.D., Krames, M.R.

“…In a practical sense, the development of high-performance visible-spectrum light-emitting diodes (LEDs) has occurred over a period of over 60 years, beginning…”
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Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction by Sun, Haiding, Park, Young Jae, Li, Kuang-Hui, Torres Castanedo, C. G., Alowayed, Abdulmohsen, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

“…Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device…”
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Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates by Li, Xiao-Hang, Detchprohm, Theeradetch, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, P., Dupuis, Russell D., Wang, Shuo, Wei, Yong O., Xie, Hongen, Fischer, Alec M., Ponce, Fernando A., Wernicke, Tim, Reich, Christoph, Martens, Martin, Kneissl, Michael

“…Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on…”
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Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow by Wang, Shuo, Li, Xiaohang, Fischer, Alec M., Detchprohm, Theeradetch, Dupuis, Russell D., Ponce, Fernando A.

“…•BAlN thin films grown to record boron contents >0.09.•Microstructure evolution shows fine columnar structure and twin formation.•Only wurtzite structure…”
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Influence of TMAl preflow on AlN epitaxy on sapphire by Sun, Haiding, Wu, Feng, Park, Young Jae, Al tahtamouni, T. M., Li, Kuang-Hui, Alfaraj, Nasir, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

“…The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor…”
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Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate by Li, Xiao-Hang, Kao, Tsung-Ting, Satter, Md. Mahbub, Wei, Yong O., Wang, Shuo, Xie, Hongen, Shen, Shyh-Chiang, Yoder, P. Douglas, Fischer, Alec M., Ponce, Fernando A., Detchprohm, Theeradetch, Dupuis, Russell D.

“…We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown…”
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Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays by Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K., Lewis, Jay

“…GaN p-i-n ultraviolet avalanche photodiodes (UV-APDs) were fabricated from epitaxial structures grown on low-dislocation-density free-standing GaN substrates…”
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Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells by Li, Xiaohang, Xie, Hongen, Ponce, Fernando A., Ryou, Jae-Hyun, Detchprohm, Theeradetch, Dupuis, Russell D.

“…We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a…”
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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers by Choi, Suk, Ji, Mi-Hee, Kim, Jeomoh, Jin Kim, Hee, Satter, Md. M., Yoder, P. D., Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

“…Data and analysis are presented for the study of efficiency droop in visible III-nitride light-emitting diodes (LEDs) considering the effects of both electron…”
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Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors by Detchprohm, Theeradetch, Liu, Yuh-Shiuan, Mehta, Karan, Wang, Shuo, Xie, Hongen, Kao, Tsung-Ting, Shen, Shyh-Chiang, Yoder, Paul D., Ponce, Fernando A., Dupuis, Russell D.

“…Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220–250 nm with reflectivity close to unity were produced using epitaxial Al x Ga1- x N/AlN…”
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Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates by Wang, Xudong, Song, Jinhui, Li, Peng, Ryou, Jae Hyun, Dupuis, Russell D, Summers, Christopher J, Wang, Zhong L

“…Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a…”
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Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition by Li, Xiao-Hang, Wang, Shuo, Xie, Hongen, Wei, Yong O., Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, Paul, Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

“…We report a three‐step method to grow high‐quality AlN heteroepitaxial layers on sapphire substrates at relatively low temperatures by metalorganic chemical…”
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Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition by Li, Xiao-Hang, Wei, Yong O., Wang, Shuo, Xie, Hongen, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, P., Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

“…We studied temperature dependence of crystalline quality of AlN layers at 1050–1250°C with a fine increment step of around 18°C. The AlN layers were grown on…”
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BAlN thin layers for deep UV applications by Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed…”
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Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures by Kim, Seongjun, Ryou, Jae-Hyun, Dupuis, Russell D., Kim, Hyunsoo

“…The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon…”
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Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating by Choi, Suk, Jin Kim, Hee, Lochner, Zachary, Kim, Jeomoh, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun

“…We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial growth of AlInN layers. We observed substantial amount of Ga in AlInN…”
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Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors by Kao, Tsung-Ting, Liu, Yuh-Shiuan, Mahbub Satter, Md, Li, Xiao-Hang, Lochner, Zachary, Douglas Yoder, P., Detchprohm, Theeradetch, Dupuis, Russell D., Shen, Shyh-Chiang, Ryou, Jae-Hyun, Fischer, Alec M., Wei, Yong, Xie, Hongen, Ponce, Fernando A.

“…We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an AlxGa1−xN-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN…”
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Density-Controlled Growth of Aligned ZnO Nanowires Sharing a Common Contact:  A Simple, Low-Cost, and Mask-Free Technique for Large-Scale Applications by Wang, Xudong, Song, Jinhui, Summers, Christopher J, Ryou, Jae Hyun, Li, Peng, Dupuis, Russell D, Wang, Zhong L

“…An effective, low cost, simple, and mask-free pathway is demonstrated for achieving density control of the aligned ZnO nanowires grown for large-scale…”
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AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport by Satter, Md Mahbub, Lochner, Zachary, Tsung-Ting Kao, Yuh-Shiuan Liu, Xiao-Hang Li, Shyh-Chiang Shen, Dupuis, Russell D., Yoder, P. D.

“…An AlGaN deep ultraviolet laser diode design exploiting AlN substrates is presented, featuring an inverse-tapered p-waveguide layer. The 2-D optoelectronic…”
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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors by Yi-Che Lee, Yun Zhang, Hee-Jin Kim, Suk Choi, Lochner, Zachary, Dupuis, Russell D, Jae-Hyun Ryou, Shyh-Chiang Shen

“…We report high-current-gain n-p-n GaN/InGaN double-heterojunction bipolar transistors (DHBTs) using a direct-growth fabrication processing approach. The impact…”
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