Search Results - "Dunn, C.N."

Determination of germanium ionization coefficients from small-signal IMPATT diode characteristics by Decker, D.R., Dunn, C.N.

“…Small-signal measurements of germanium IMPATT diode admittance in the frequency range from 2 to 8 GHz were taken for various current densities. These…”
Get full text

A Ge backward detector diode with a low temperature coefficient at X-band by Dunn, C.N.

“…Many new microwave systems need detector diodes with large differential sensitivity, low change of output voltage with ambient temperature, low noise, and…”
Get full text

Germanium epitaxial mesa diodes for a 6-GHz ½-watt CW avalanche oscillator by Dunn, C.N., Olson, H.M.

Get full text

Determination of germanium ionization coefficients from small signal IMPATT diode characteristics by Decker, D.R., Dunn, C.N.

“…Small signal measurements of germanium IMPATT diode admittance in the frequency range from 2 to 8 GHz were taken as a function of current density. These…”
Get full text

Germanium epitaxial mesa diodes for a 6 GHz, 1/2-watt CW avalanche oscillator by Dunn, C.N., Olson, H.M.

“…Germanium epitaxial mesa diodes developed for a radio relay communications application are described. These diodes are capable of providing 1/2-watt CW at…”
Get full text

An analog/digital BCDMOS technology with dielectric isolation-devices and processes by Lu, C.-Y., Tsai, N.-S., Dunn, C.N., Riffe, P.C., Shibib, M.A., Furnanage, R.A., Goodwin, C.A.

“…A dielectrically isolated bipolar-CMOS-DMOS (BCDMOS) integrated-circuit technology that has been successfully developed for high-voltage applications (150-500…”
Get full text

I-1 GaAs IMPATT diodes prepared by molecular-beam epitaxy by Cho, A.Y., Dunn, C.N., Kuvas, R.L., Schroeder, W.E.

Get full text

A 50 MHz phase- and frequency-locked loop by Cordell, R.R., Forney, J.B., Dunn, C.N., Garrett, W.G.

“…A monolithic phase/frequency-locked loop has been developed for operation at up to 50 MHz. The loop combines wide capture range and narrow bandwidth, making it…”
Get full text

Determination of germanium ionization coefficients from small signal IMPATT diode characteristics by Decker, D.R., Dunn, C.N.

Get full text

Computer-Aided Small-Signal Characterization of IMPATT Diodes by Dunn, C.N., Dalley, J.E.

“…The use of a general purpose digital computer to convert microwave impedance measurement data to useful forms and simultaneously correct for system errors was…”
Get full text

Computer-Aided Small-Signal Characterization of IMPATT Diodes by Dunn, C.N., Dalley, J.E.

“…This paper is a discussion of IMPATT wafer small-signal characteristics in the frequency range of 2.0-8.0 GHz. These characteristics have been obtained by…”
Get full text

Large-Signal Silicon and Germanium Avalanche-Diode Characteristics by Decker, D.R., Dunn, C.N., Frank, R.L.

“…A technique for measurement of the large-signal single-frequency microwave amplifier admittance of avalanche diodes is described, and results are presented for…”
Get full text

The effect of injecting contacts on avalanche diode performance by Decker, D.R., Dunn, C.N., Frost, H.B.

“…Metal-semiconductor contact injection on the junction side of diffused-mesa avalanche diodes has been found to have a significant effect on the performance of…”
Get full text

Fabrication and noise performance of high-power GaAs IMPATTS by Irvin, J.C., Coleman, D.J., Johnson, W.A., Tatsuguchi, I., Decker, D.R., Dunn, C.N.

“…Schottky-barrier GaAs IMPATT diodes have been fabrirated in a double epitaxial layer structure on low-etch-pit density substrates. The resulting low defect…”
Get full text

Contributors by Adams, D.K., Blattner, D.J., Dalley, J.E., Dunn, C.N., Felsen, L.B., Gopinath, A., Ho, R.Y.C., Hornsby, J.S., Millican, G.L., Paglione, R.W., Siekanowicz, W.W., Wales, R.C., Walsh, T.E., Hung Yuet Yee

Get full text

Improved fabrication and noise performance of silicon double-drift millimeter-wave IMPATT diodes by Dunn, C.N., Morris, B.I., Paulnack, C.L., Seidel, T.E., Smith, L.J.

“…Silicon double-drift IMPATT diodes with both drift regions implanted into π (undoped) epi on p + substrates are discussed. By incorporating doubly-charged…”
Get full text

Contributors, Nov. 1970 by Berson, B.E., Bosch, B.G., Bowers, H.C., Cawsey, D., Kern K. N. Chang, Conn, D.R., Decker, D.R., Dunn, C.N., Engelmann, R.W.H., Enstrom, R.E., Evans, W.J., Frank, R.L., Fray, S.J., Frey, W., Gibbs, S.E., Greifing, P.T., Haddad, G.I., Isobe, T., Ito, Y., Khan, P.J., Komizo, H., Kondo, H., Walter H. Ku, Lee A. MacKenzie, Marx, R.E., Midford, T.A., Mitchell, H.R., Mouthaan, K., Nagano, S., Narayan, S.Y., Osborne, T.L., Owens, R.P., Pence, I.W., Perlman, B.S., Plants, S.T., Pollmann, H., Prager, H.J., Reynolds, J.F., Rosenbaum, F.J., Sasagawa, S., Scherer, E.F., Schroeder, W.E., Steinbrecher, D.H., Sterzer, F., Stewart, J.A.C., Taylor, B.C., Tokida, M., Wei Ching Tsai, Upadhyayula, C.L., Weisbrod, S.

Get full text