Search Results - "Duncan, Adam R."

Electron-Induced Single-Event Upsets in 45-nm and 28-nm Bulk CMOS SRAM-Based FPGAs Operating at Nominal Voltage by Gadlage, Matthew J., Roach, Austin H., Duncan, Adam R., Savage, Mark W., Kay, Matthew J.

“…Electron-induced single-event upsets (SEUs) are observed in 45-nm and 28-nm bulk complementary metal-oxide semiconductor static random-access memory-based…”
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Characterizing Radiation and Stress-Induced Degradation in an Embedded Split-Gate NOR Flash Memory by Duncan, Adam R., Gadlage, Matthew J., Roach, Austin H., Kay, Matthew J.

“…Radiation and stress-induced degradation are characterized in split-gate NOR flash cells through a set of unique experiments. Radiation and program/erase…”
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Multiple-Cell Upsets Induced by Single High-Energy Electrons by Gadlage, Matthew J., Roach, Austin H., Duncan, Adam R., Williams, Aaron M., Bossev, Dobrin P., Kay, Matthew J.

“…Multiple-cell upsets (MCUs) in static random access memory-based field-programmable gate arrays from three different technology nodes are recorded from…”
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Interrupted PROGRAM and ERASE Operations for Characterizing Radiation Effects in Commercial NAND Flash Memories by Roach, Austin H., Gadlage, Matthew J., Duncan, Adam R., Ingalls, James D., Kay, Matthew J.

“…A technique of interrupting PROGRAM and ERASE operations is used to extract information about the analog characteristics of commercial NAND Flash memory cells…”
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Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory by Kay, Matthew J., Gadlage, Matthew J., Duncan, Adam R., Ingalls, David, Howard, Andrew, Oldham, Timothy R.

“…Consecutive write operations performed on a Samsung NAND flash memory are shown to significantly increase the total ionizing dose level at which data…”
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Low-Energy Electron Irradiation of NAND Flash Memories by Gadlage, Matthew J., Roach, Austin H., Labello, Jesse M., Halstead, Matthew R., Kay, Matthew J., Duncan, Adam R., Ingalls, James D., Bossev, Dobrin P., Rogers, James P.

“…Data on NAND Flash memories exposed to electrons with energies ranging from 20 keV to 100 keV are presented. When the memories are exposed to electrons below…”
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Impact of X-Ray Exposure on a Triple-Level-Cell NAND Flash by Gadlage, Matthew J., Kay, Matthew J., Ingalls, J. David, Duncan, Adam R., Ashley, Shawn A.

“…The total ionizing dose response of a triple-level-cell (TLC) NAND flash is shown to be low enough that data corruption can occur as a result of an x-ray…”
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Using Charge Accumulation to Improve the Radiation Tolerance of Multi-Gb NAND Flash Memories by Kay, Matthew J., Gadlage, Matthew J., Duncan, Adam R., Ingalls, J. David, Savage, Mark W.

“…Consecutive write operations on 42-nm and 60-nm single-level cell (SLC) Samsung NAND flash memories are shown to significantly improve both the total ionizing…”
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Implications of the Logical Decode on the Radiation Response of a Multi-Level Cell NAND Flash Memory by Ingalls, J. David, Gadlage, Matthew J., Duncan, Adam R., Kay, Matthew J., Cole, Patrick L., Hunt, Ken K.

“…The radiation response of a multi-level cell (MLC) NAND flash is used to determine the organization of logical states as they correspond to floating gate…”
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Impact of Neutron-Induced Displacement Damage on the Multiple Bit Upset Sensitivity of a Bulk CMOS SRAM by Gadlage, M. J., Kay, M. J., Duncan, A. R., Savage, M. W., Ingalls, J. D., Cruz-Rodriguez, D., Howard, A.

“…Neutron irradiation of a multiple bit upset sensitive bulk CMOS SRAM prior to heavy ion exposure is shown to significantly increase the number of bits upset…”
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Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests by Olson, Brian D., Ingalls, J. David, Rice, Casey H., Hedge, Casey C., Cole, Patrick L., Duncan, Adam R., Armstrong, Sarah E.

“…Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is…”
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Soft Errors Induced by High-Energy Electrons by Gadlage, Matthew J., Roach, Austin H., Duncan, Adam R., Williams, Aaron M., Bossev, Dobrin P., Kay, Matthew J.

“…In the semiconductor reliability community, soft error research has primarily focused on neutrons and alpha particles. However, there are certain situations…”
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Heavy Ion Testing of Commercial GaN Transistors in the Radio Frequency Spectrum by Armstrong, Sarah E., Bole, Ken, Bradley, Holly, Johnson, Ethan, Staggs, James, Shedd, Walter, Cole, Patrick L., Rice, Casey H., Ingalls, J. David, Hedge, Casey C., Duncan, Adam R., Olson, Brian D.

“…Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore…”
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Total Ionizing Dose Effects in Commercial Floating-Gate-Alternative Non-Volatile Memories by Gadlage, Matthew J., Kay, Matthew J., Bruce, David I., Roach, Austin H., Duncan, Adam R., Williams, Aaron M., Ingalls, J. David

“…The total dose response of commercially-available floating-gate-alternative non-volatile memories is characterized. The response of MRAM, FRAM, CBRAM, ReRAM,…”
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Alpha-particle and neutron-induced single-event transient measurements in subthreshold circuits by Gadlage, Matthew J., Roach, Austin H., Duncan, Adam R., Halstead, Matthew R., Kay, Matthew J., Gadfort, Peter, Alhbin, Jonathan R., Stansberry, Scott

“…Experimental data from alpha particle, neutron, and heavy ion testing are discussed and analyzed from a sub-threshold voltage SET characterization circuit…”
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Simulation Study on the Effect of Multiple Node Charge Collection on Error Cross-Section in CMOS Sequential Logic by Casey, M.C., Duncan, A.R., Bhuva, B.L., Robinson, W.H., Massengill, L.W.

“…A technique for estimating error cross-section for combinational circuits based on charge collection at multiple nodes is presented. Ordinarily, charge…”
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Comparison of SEUTool results to experimental results in boeing radiation tolerant DSP (BDSP C30) by Duncan, A.R., Srinivasan, V., Sternberg, A.L., Robinson, W.H., Bhuva, B.L., Massengill, L.W.

“…A CAD tool (SEUTool) is analyzed for simulating single-event upsets (SEUs) in large combinational logic circuits. SEUTool cross-section results show excellent…”
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Single Event Effects in 14-Nm Intel Microprocessors by Duncan, Adam R., Szabo, Carl M., Bossev, Dobrin P., LaBel, Kenneth A., Williams, Aaron M., Gadlage, Matthew J., Ingalls, James D., Hedge, Casey H., Roach, Austin H., Kay, Matthew J.

“…Heavy ion and proton test results on multiple commercial 14-nm Intel microprocessors are presented. Testing was performed using commercial motherboards with a…”
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