Search Results - "Dumin, D.J."

The charging and discharging of high-voltage stress-generated traps in thin silicon oxide by Scott, R.S., Dumin, D.J.

“…Excess high-voltage stress-generated low-level leakage currents through 10 nm silicon oxides, previously described as DC currents, are shown to decay to the…”
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High field related thin oxide wearout and breakdown by Dumin, D.J., Mopuri, S.K., Vanchinathan, S., Scott, R.S., Subramoniam, R., Lewis, T.G.

“…The high voltage wearout and breakdown of thin silicon oxides has been described in terms of traps generated inside of the oxide and at the interfaces by a…”
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Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides by Jackson, J.C, Oralkan, Ö, Dumin, D.J, Brown, G.A

“…It was found that the breakdown times measured using time-dependent-dielectric-breakdown (TDDB) distributions could be shifted to shorter times when the amount…”
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Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films by Dumin, D.J., Dickerson, K.J., Brown, G.A.

“…Breakdown and wearout in MOS capacitors fabricated with 10 nm-thick silicon oxide films on p-type silicon are discussed. They have been stressed at high…”
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Announcement changes in the Editorial Board by Dumin, D.J., Ueda, D.

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Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides by Dumin, D.J., Maddux, J.R.

“…Increases in pre-tunneling leakage currents in thin oxides after the oxides are subjected to high voltage stresses are correlated with the number of traps…”
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MOS Integrated circuits fabricated on multilayer heteroepitaxial silicon-insulator structures for applications to 3-D integrated circuits by Sugiura, S., Yoshida, T., Kaneko, Y., Shono, K., Dumin, D.J.

“…Multiple layers of single-crystal silicon and boron phosphide have been grown on silicon and silicon-on-sapphire substrates. Up to four layers have been grown…”
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A model relating wearout to breakdown in thin oxides by Dumin, D.J., Maddux, J.R., Scott, R.S., Subramoniam, R.

“…A model has been developed relating wearout to breakdown in thin oxides. Wearout has been described in terms of trap generation inside of the oxide during high…”
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Limitations on oxide thicknesses in flash EEPROM applications by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.

“…Oxides used in EEPROMs have severe limitations placed on leakage currents due to long data retention time requirements. During write/erase (W/E) cycling,…”
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Thickness dependence of stress-induced leakage currents in silicon oxide by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.C.

“…The thickness dependence of high-voltage stress-induced leakage currents (SILC's) has been measured in oxides with thicknesses between 5 and 11 nm. The SILC's…”
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Properties of high-voltage stress generated traps in thin silicon oxide by Scott, R.S., Dumin, N.A., Hughes, T.W., Dumin, D.J., Moore, B.T.

“…It has previously been shown that trap generation inside thin oxides during high voltage stressing can be coupled to time-dependent-dielectric-breakdown…”
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Bipolar stressing, breakdown, and trap generation in thin silicon oxides by Dumin, D.J., Vanchinathan, S.

“…Thin silicon oxide films were stressed with bipolar pulses in which the magnitudes of both the positive and negative pulses were independently varied, The…”
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A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide by Chen, Y., Singh, R., Rajan, K., Dumin, D.J., DeBoer, S., Thakur, R.P.S.

“…Rapid photothermal annealing is based on the use of vacuum ultraviolet (VUV) photons as the source of optical energy and tungsten halogen lamps as the source…”
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The superposition of transient low-level leakage currents in stressed silicon oxides by Scott, R.S., Dumin, D.J.

“…Thin films of silicon oxide were stressed at high voltages, which generated traps inside of the oxides and at the oxide interfaces. The transient low-level…”
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Correlation of the decay of tunneling currents with trap generation inside thin oxides by Dumin, N.A, Dickerson, K.J, Dumin, D.J, Moore, B.T

“…The time decays of tunneling currents flowing through 8.4 and 10 nm thick oxides have been measured during constant-voltage stress testing. The densities of…”
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The electric field, oxide thickness, time and fluence dependences of trap generation in silicon oxides and their support of the E-model of oxide breakdown by Qian, D., Dumin, D.J.

“…The trap generation in oxides between 5 nm and 13.5 nm thick has been measured as a function of the oxide electric field, oxide thickness, stress time, and…”
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Analysis of charge injection and trapping in MOS capacitors formed on p-type silicon substrates by Hall, M.D., Dumin, D.J.

“…The changes due to charge injection in p-substrate (n-channel) MOS capacitors during accumulation and inversion biasing have been studied. The testing methods…”
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Comparison of oxide wearout resulting from DC and pulsed charge injection by Vigrass, W.J., Dumin, D.J.

“…Gate leakage currents in VLSI MOS transistors can be studied using MOS capacitors which consist of a thin-oxide dielectric sandwiched between a gate electrode…”
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Effects of nitrogen incorporation during growth on thin oxide wearout and breakdown by Dumin, N.A, Dumin, D.J, Hames, G.A, Wortman, J.J, Beck, S.E

“…Thin oxides, 6.4–7.6 nm thick, have been formed in oxygen with varying levels of nitrogen incorporated into the oxidation ambient. In addition to films with no…”
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Ballistic transport and properties of submicrometer Silicon MOSFET's from 300 to 4.2 K by Robertson, P.J., Dumin, D.J.

“…The characteristics of submicrometer silicon MOSFET's have been measured from 300 to 4.2 K, and the mobility versus temperature and carrier velocity versus…”
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