Search Results - "Dubrovskii, VG"

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment by Zhang, X, Dubrovskii, V. G, Sibirev, N. V, Cirlin, G. E, Sartel, C, Tchernycheva, M, Harmand, J. C, Glas, F

“…The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the…”
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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate by Cirlin, G. E, Bouravleuv, A. D, Soshnikov, I. P, Samsonenko, Yu. B, Dubrovskii, V. G, Arakcheeva, E. M, Tanklevskaya, E. M, Werner, P

“…We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties…”
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Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment by Dubrovskii, V. G., Cirlin, G. E., Soshnikov, I. P., Tonkikh, A. A., Sibirev, N. V., Samsonenko, Yu. B., Ustinov, V. M.

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Nucleation and initial radius of self-catalyzed III-V nanowires by Dubrovskii, V.G., Borie, S., Dagnet, T., Reynes, L., André, Y., Gil, E.

“…We treat theoretically the initial nucleation step of self-catalyzed III-V nanowires under simultaneously deposited group III and V vapor fluxes and with…”
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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate by Cirlin, G. E., Bouravleuv, A. D., Soshnikov, I. P., Samsonenko, Yu B., Dubrovskii, V. G., Arakcheeva, E. M., Tanklevskaya, E. M., Werner, P.

“…We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties…”
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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment by Zhang, X, Dubrovskii, VG, Sibirev, NV, Cirlin, GE, Sartel, C, Tchernycheva, M, Harmand, JC, Glas, F

“…The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the…”
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Growth of GaAs nanoscale whiskers by magnetron sputtering deposition by Dubrovskii, V.G., Soshnikov, I.P., Sibirev, N.V., Cirlin, G.E., Ustinov, V.M.

“…The possibility to grow long (up to several microns) GaAs nanoscale whiskers on the GaAs(1 1 1)B surface activated by Au by magnetron sputtering deposition is…”
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Effect of growth kinetics on the structural and optical properties of quantum dot ensembles by Dubrovskii, V.G., Cirlin, G.E., Musikhin, Yu.G., Samsonenko, Yu.B., Tonkikh, A.A., Polyakov, N.K., Egorov, V.A., Tsatsul’nikov, A.F., Krizhanovskaya, N.A., Ustinov, V.M., Werner, P.

“…The growth kinetics influence on the structural and optical properties of quantum dot ensembles in the Ge/Si(1 0 0) and InAs/GaAs(1 0 0) heteroepitaxial…”
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Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism by Dubrovskii, V. G., Sibirev, N. V., Cirlin, G. E.

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On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature by Dubrovskii, V. G., Soshnikov, I. P., Cirlin, G. E., Tonkikh, A. A., Samsonenko, Yu. B., Sibirev, N. V., Ustinov, V. M.

“…GaAs nanowhiskers were grown by molecular beam epitaxy on the GaAs(111)B surface activated by Au at the surface temperature of 585 °C. The dependence of…”
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Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy by Dubrovskii, V G, Sibirev, N V, Cirlin, G E, Harmand, J C, Ustinov, V M

“…A theoretical model of nanowire formation by the vapor-liquid-solid mechanism during molecular beam epitaxy and related growth techniques is presented. The…”
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Kinetically controlled engineering of quantum dot arrays by Dubrovskii, V. G.

“…A kinetic model for the formation of arrays of coherent strained islands is developed. The derived expressions provide a detailed characterization of quantum…”
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The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy by Cirlin, G. E., Dubrovskii, V. G., Sibirev, N. V., Soshnikov, I. P., Samsonenko, Yu. B., Tonkikh, A. A., Ustinov, V. M.

“…The formation of GaAs and AlGaAs nanowhiskers using molecular-beam epitaxy on GaAs (111)B surfaces activated with Au is theoretically and experimentally…”
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Diffusion-induced islanding in heteroepitaxial systems by Dubrovskii, V.G.

“…A microscopic lattice gas model for ultra-thin film dynamics is developed and applied to the case of heteroepitaxial growth. A set of non-linear kinetic…”
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Nanodimensional whisker growth by the generalized vapor-liquid-crystal mechanism by Dubrovskii, V. G., Sibirev, N. V.

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Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation by Dubrovskiı̆, V. G.

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Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires by Dubrovskii, Vladimir G, Sibirev, Nickolai V

“…We present a modification of the Kolmogorov-Johnson-Mehl-Avrami crystallization model to the case of a finite size crystal facet growing layer by layer. A…”
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A modified Kolmogorov model and the growth rate of a crystal face of arbitrary size by Sibirev, N. V., Dubrovskii, V. G.

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The effective thickness, temperature and growth rate behavior of quantum dot ensembles by Dubrovskii, V. G., Cirlin, G. E., Ustinov, V. M.

“…A kinetic model for the stress driven formation of quantum dots is studied, incorporating the growth of wetting layer, the island nucleation and size…”
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Time Variation of the Mean Quantum Dot Size at the Kinetic Growth Stage by Dubrovskii, V. G.

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