Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors
J. Low Temp. Phys. 214, 256 (2024) To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of...
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Main Authors: | , , , , , , , , , , , , , , |
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Format: | Journal Article |
Language: | English |
Published: |
26-01-2024
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Subjects: | |
Online Access: | Get full text |
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Summary: | J. Low Temp. Phys. 214, 256 (2024) To search for dark matter candidates with masses below $\mathcal{O}$(MeV),
the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap
semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors
with electronic bandgaps on the order of 1-100 meV. In order to detect the
charge signal produced by scattering or absorption events, SPLENDOR has
designed a two-stage cryogenic HEMT-based amplifier with an estimated charge
resolution approaching the single-electron level. A low-capacitance ($\sim$1.6
pF) HEMT is used as a buffer stage at $T=10\,\mathrm{mK}$ to mitigate effects
of stray capacitance at the input. The buffered signal is then amplified by a
higher-capacitance ($\sim$200 pF) HEMT amplifier stage at $T=4\,\mathrm{K}$.
Importantly, the design of this amplifier makes it usable with any insulating
material - allowing for rapid prototyping of a variety of novel detector
materials. We present the two-stage cryogenic amplifier design, preliminary
voltage noise performance, and estimated charge resolution of 7.2 electrons. |
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Bibliography: | LA-UR-24-20758 |
DOI: | 10.48550/arxiv.2311.02229 |