Search Results - "Dubourdieu, C"

Corrigendum to ‘Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice’ Ultramicroscopy 253 (2023) 113778 by Cherkashin, N., Louiset, A., Chmielewski, A., Kim, D.J., Dubourdieu, C., Schamm-Chardon, S.

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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice by Cherkashin, N., Louiset, A., Chmielewski, A., Kim, D.J., Dubourdieu, C., Schamm-Chardon, S.

“…•We propose two novel methods, AbStrain and Relative displacement, for the reciprocal space treatment of high-resolution transmission electron microscopy…”
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Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation by Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., Esseni, D.

“…In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly…”
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Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer by Louahadj, L., Bachelet, R., Regreny, P., Largeau, L., Dubourdieu, C., Saint-Girons, G.

“…Epitaxial SrTiO3 (STO) layers were grown on GaAs(001) substrates by molecular beam epitaxy. A Ti-based surface passivation was used prior to STO growth. The…”
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Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition by Rauwel, E., Dubourdieu, C., Holländer, B., Rochat, N., Ducroquet, F., Rossell, M. D., Van Tendeloo, G., Pelissier, B.

“…Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range…”
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Ferroelectric Pb(Zr,Ti)O3 epitaxial layers on GaAs by Louahadj, L., Le Bourdais, D., Largeau, L., Agnus, G., Mazet, L., Bachelet, R., Regreny, P., Albertini, D., Pillard, V., Dubourdieu, C., Gautier, B., Lecoeur, P., Saint-Girons, G.

“…Ferroelectric epitaxial Pb(Zr,Ti)O3 (PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The…”
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Off-Stoichiometry Effects on the Crystalline and Defect Structure of Hexagonal Manganite REMnO3 Films (RE = Y, Er, Dy) by Gélard, I, Jehanathan, N, Roussel, H, Gariglio, S, Lebedev, O. I, Van Tendeloo, G, Dubourdieu, C

“…The crystalline and defect structure of epitaxial hexagonal RE x Mn y O3 (RE = Er, Dy) films with varying cationic composition was investigated by X-ray…”
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Study of the La-related dipole in TiN/LaO x /HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering by Boujamaa, R, Martinez, E, Pierre, F, Renault, O, Detlefs, B, Zegenhagen, J, Baudot, S, Gros-Jean, M, Bertin, F, Dubourdieu, C

“…In this paper, we report the effect of high temperature annealing on the chemical and electronic structure of technologically relevant TiN/LaO x…”
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Magnetic anisotropy of ferromagnetic La0.7Sr0.3MnO3 epitaxial thin films: Dependence on temperature and film thickness by Steenbeck, K., Habisreuther, T., Dubourdieu, C., Sénateur, J. P.

“…The magnetic anisotropy of (001) oriented La0.7Sr0.3MnO3 films of thickness t=7–156 nm, deposited on LaAlO3 substrates, was measured by torque magnetometry in…”
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Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al2O3/HfO2 nanolaminates by BONVALOT, M, KAHN, M, VALLEE, C, GOURVEST, E, ABED, H, JOREL, C, DUBOURDIEU, C

“…The microstructure of thin HfO2-Al2O3 nanolaminate high I[ordm dielectric stacks grown by atomic vapor deposition has been studied by attenuated total…”
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HREM Study of Epitaxially Stabilized Hexagonal Rare Earth Manganites by Graboy, I. E, Bosak, A. A, Gorbenko, O. Yu, Kaul, A. R, Dubourdieu, C, Sénateur, J.-P, Svetchnikov, V. L, Zandbergen, H. W

“…The formation of the high-temperature hexagonal modification of DyMnO3 and nonexisting as bulk hexagonal EuMnO3, GdMnO3, and SmMnO3 was observed on ZrO2(Y2O3)…”
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Low-field magnetoresistance in perovskite manganites: Magnetic field, temperature, and current dependence by Gunnarsson, R., Ivanov, Z. G., Dubourdieu, C., Roussel, H.

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Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition by Durand, C., Vallée, C., Loup, V., Salicio, O., Dubourdieu, C., Blonkowski, S., Bonvalot, M., Holliger, P., Joubert, O.

“…Yttrium oxide-based metal–insulator–metal (MIM) capacitors were investigated. The dielectric films were grown on Si/TiSi2/TiN substrates using a low thermal…”
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Spin-polarized quasiparticles injection in La0.7Sr0.3MnO3∕SrTiO3∕Nb heterostructure devices by Fratila, L., Maurin, I., Dubourdieu, C., Villégier, J. C.

“…We report the effect of spin-polarized quasiparticle injection from a ferromagnetic manganite into a conventional Nb superconductor in a…”
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Thin films and superlattices of multiferroic hexagonal rare earth manganites by Dubourdieu, C., Huot, G., Gelard, I., Roussel, H., Lebedev, O.I., Van Tendeloo, G.

“…Hexagonal YMnO 3 and HoMnO 3 as well as (YMnO 3 /HoMnO 3 ) 15 superlattices were grown on (111) ZrO 2 (Y 2 O 3 ) and (111) Pt/TiO 2 /SiO 2 /p-type (100)Si…”
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Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies by Dubourdieu, C., Roussel, H., Jimenez, C., Audier, M., Sénateur, J.P., Lhostis, S., Auvray, L., Ducroquet, F., O'Sullivan, B.J., Hurley, P.K., Rushworth, S., Hubert-Pfalzgraf, L.

“…HfO 2 and SrTiO 3 films were grown on silicon by liquid injection metal organic chemical vapour deposition. The microstructure and structure of the films were…”
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A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron by Gibertini, P., Fehlings, L., Lancaster, S., Duong, Q. T., Mikolajick, T., Dubourdieu, C., Slesazeck, S., Covi, E., Deshpande, V.

“…Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes…”
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Amorphous GaOx based charge trap memory device for neuromorphic applications by Van Dijck, C., Maudet, F., Dubourdieu, C., Deshpande, V.

“…•Low temperature amorphous GaOx deposited 3-terminal field-effect based memory device.•Based on charge trap memory with retention of more than 102 s and…”
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Neutron diffraction, NMR and magneto-transport properties in the Pr0.6Sr0.4MnO3 perovskite manganite by BOUJELBEN, W, ELLOUZE, M, CHEIKH-ROUHOU, A, PIERRE, J, CAI, Q, YELON, W. B, SHIMIZU, K, DUBOURDIEU, C

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Effect of substitution of Ti by Zr in BaTiO3 thin films grown by MOCVD by Pantou, R, Dubourdieu, C, Weiss, F, Kreisel, J, Köbernik, G, Haessler, W

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