Search Results - "Du, Zhonghao"

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN by Xiao, Ming, Du, Zhonghao, Xie, Jinqiao, Beam, Edward, Yan, Xiaodong, Cheng, Kai, Wang, Han, Cao, Yu, Zhang, Yuhao

“…This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN…”
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Tri-gate GaN junction HEMT by Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Yan, Xiaodong, Cheng, Kai, Clavel, Michael, Hudait, Mantu K., Kravchenko, Ivan, Wang, Han, Zhang, Yuhao

“…This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the…”
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Tri-Gate GaN Junction HEMTs: Physics and Performance Space by Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Wang, Han, Zhang, Yuhao

“…We present the physics and performance space of the tri-gate GaN junction high electron mobility transistor (Tri-JHEMT), a new tri-gate GaN device proposed…”
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Linear Dichroism Conversion in Quasi‐1D Perovskite Chalcogenide by Wu, Jiangbin, Cong, Xin, Niu, Shanyuan, Liu, Fanxin, Zhao, Huan, Du, Zhonghao, Ravichandran, Jayakanth, Tan, Ping‐Heng, Wang, Han

“…Anisotropic photonic materials with linear dichroism are crucial components in many sensing, imaging, and communication applications. Such materials play an…”
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Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications by Liu, Hefei, Qin, Yuan, Chen, Hung-Yu, Wu, Jiangbin, Ma, Jiahui, Du, Zhonghao, Wang, Nan, Zou, Jingyi, Lin, Sen, Zhang, Xu, Zhang, Yuhao, Wang, Han

“…Artificial neuronal devices are critical building blocks of neuromorphic computing systems and currently the subject of intense research motivated by…”
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Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN by Yang, Zineng, Ma, Yunwei, Porter, Matthew, Gong, Hehe, Du, Zhonghao, Wang, Han, Luo, Yi, Wang, Lai, Zhang, Yuhao

“…Many emerging GaN electronic and optoelectronic devices comprise p-type gallium nitride (p-GaN) layers buried below n-type layers, which often show nonuniform…”
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Activating Thick Buried p-GaN for Device Applications by Ma, Yunwei, Xiao, Ming, Du, Zhonghao, Wang, Lei, Carlson, Eric, Guido, Louis, Wang, Han, Wang, Lai, Luo, Yi, Zhang, Yuhao

“…Many emerging GaN electronic and optoelectronic devices comprise p-GaN layers buried below n-GaN or AlGaN. The activation of these buried p-GaN layers usually…”
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A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties by Liu, Hefei, Wu, Tong, Yan, Xiaodong, Wu, Jiangbin, Wang, Nan, Du, Zhonghao, Yang, Hao, Chen, Buyun, Zhang, Zhihan, Liu, Fanxin, Wu, Wei, Guo, Jing, Wang, Han

“…Artificial neuronal devices that functionally resemble biological neurons are important toward realizing advanced brain emulation and for building bioinspired…”
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Non-iterative Pyramid Network for Unsupervised Deformable Medical Image Registration by Li, Zongmin, Li, Xuanting, Fan, Jiayue, Du, Zhonghao, Yang, Chaozhi

“…Large deformation is a key issue for deformable medical image registration. Decomposing a large deformation into several small deformations is an efficient…”
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1 kV Self-Aligned Vertical GaN Superjunction Diode by Ma, Yunwei, Porter, Matthew, Qin, Yuan, Spencer, Joseph, Du, Zhonghao, Xiao, Ming, Wang, Yifan, Kravchenko, Ivan, Briggs, Dayrl P., Hensley, Dale K., Udrea, Florin, Tadjer, Marko, Wang, Han, Zhang, Yuhao

“…This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the…”
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10-kV Ga 2 O 3 Charge-Balance Schottky Rectifier Operational at 200 °C by Qin, Yuan, Xiao, Ming, Porter, Matthew, Ma, Yunwei, Spencer, Joseph, Du, Zhonghao, Jacobs, Alan G., Sasaki, Kohei, Wang, Han, Tadjer, Marko, Zhang, Yuhao

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10 kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C by Qin, Yuan, Xiao, Ming, Porter, Matthew, Ma, Yunwei, Spencer, Joseph, Du, Zhonghao, Jacobs, Alan G., Sasaki, Kohei, Wang, Han, Tadjer, Marko, Zhang, Yuhao

“…This work demonstrates a lateral Ga 2 O 3 Schottky barrier diode (SBD) with a breakdown voltage ( BV ) over 10 kV, the highest BV reported in Ga 2 O 3 devices…”
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Spin–Phonon Coupling in Ferromagnetic Monolayer Chromium Tribromide by Wu, Jiangbin, Yao, Yu, Lin, Miao‐Ling, Rösner, Malte, Du, Zhonghao, Watanabe, Kenji, Taniguchi, Takashi, Tan, Ping‐Heng, Haas, Stephan, Wang, Han

“…Abstract Novel 2D magnets exhibit intrinsic electrically tunable magnetism down to the monolayer limit, which has significant value for nonvolatile memory and…”
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Spin–Phonon Coupling in Ferromagnetic Monolayer Chromium Tribromide by Wu, Jiangbin, Yao, Yu, Lin, Miao‐Ling, Rösner, Malte, Du, Zhonghao, Watanabe, Kenji, Taniguchi, Takashi, Tan, Ping‐Heng, Haas, Stephan, Wang, Han

“…Novel 2D magnets exhibit intrinsic electrically tunable magnetism down to the monolayer limit, which has significant value for nonvolatile memory and emerging…”
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1 kV Self-Aligned Vertical GaN Superjunction Diode by Ma, Yunwei, Porter, Matthew, Qin, Yuan, Spencer, Joseph, Du, Zhonghao, Xiao, Ming, Wang, Yifan, Kravchenko, Ivan, Briggs, Dayrl P., Hensley, Dale K., Udrea, Florin, Tadjer, Marko, Wang, Han, Zhang, Yuhao

“…This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the…”
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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices by Ma, Yunwei, Qin, Yuan, Porter, Matthew, Spencer, Joseph, Du, Zhonghao, Xiao, Ming, Wang, Boyan, Wang, Yifan, Jacobs, Alan G., Wang, Han, Tadjer, Marko, Zhang, Yuhao

“…Abstract Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to…”
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NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed by Xiao, Ming, Wang, Boyan, Zhang, Ruizhe, Song, Qihao, Spencer, Joseph, Du, Zhonghao, Qin, Yuan, Sasaki, Kohei, Wang, Han, Tadjer, Marko, Zhang, Yuhao

“…This work investigates the blocking electric field, capacitance, and switching speed of the p-type NiO based junction termination extension (JTE) for vertical…”
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Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability by Ma, Yunwei, Xiao, Ming, Zhang, Yuhao, Du, Zhonghao, Yan, Xiaodong, Wang, Han, Cheng, Kai, Clavel, Michael, Hudait, Mantu K., Tao, Lei, Lin, Feng, Kravchenko, Ivan

“…The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates…”
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First Demonstration of Vertical Superjunction Diode in GaN by Xiao, Ming, Ma, Yunwei, Du, Zhonghao, Qin, Yuan, Liu, Kai, Cheng, Kai, Udrea, Florin, Xie, Andy, Beam, Edward, Wang, Boyan, Spencer, Joseph, Tadjer, Marko, Anderson, Travis, Wang, Han, Zhang, Yuhao

“…We report the first experimental demonstration of a vertical superjunction device in GaN. P-type nickel oxide (NiO) is sputtered conformally in 6 \mu…”
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2 kV, 0.7 mΩcm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness by Qin, Yuan, Porter, Matthew, Xiao, Ming, Du, Zhonghao, Zhang, Hongming, Ma, Yunwei, Spencer, Joseph, Wang, Boyan, Song, Qihao, Sasaki, Kohei, Lin, Chia-Hung, Kravchenko, Ivan, Briggs, Dayrl P, Hensley, Dale K, Tadjer, Marko, Wang, Han, Zhang, Yuhao

“…We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10…”
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