Search Results - "Du, Xianghao"

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  1. 1

    Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO2 thin film by Jiang, Ran, Ma, Pengfei, Han, Zuyin, Du, Xianghao

    Published in Scientific reports (24-08-2017)
    “…A synaptic memristor based on IGZO and oxygen-deficient HfO 2 films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of…”
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    Journal Article
  2. 2

    Investigation of chemical distribution in the oxide bulk layer in Ti/HfO2/Pt memory devices using x-ray photoelectron spectroscopy by Jiang, Ran, Du, Xianghao, Han, Zuyin, Sun, Weideng

    Published in Applied physics letters (27-04-2015)
    “…Resistive switching (RS) of Ti/HfO2/Pt memory devices was studied using X-ray photoelectron spectroscopy. Hf4+ monotonously decreases with depth increasing…”
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    Journal Article
  3. 3

    Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells by Jiang, Ran, Wu, Zhengran, Du, Xianghao, Han, Zuyin, Sun, Weideng

    Published in Applied physics letters (06-07-2015)
    “…Greatly improved resistance performance, including high resistance ratio between the high resistance state and the low resistance state, long-time retention,…”
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    Journal Article
  4. 4

    Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories by Jiang, Ran, Han, Zuyin, Du, Xianghao

    Published in Microelectronics and reliability (01-08-2016)
    “…Reliability/Uniformity of resistance switching in Ti/HfO2/Pt memory structure was improved by inserting an interfacial layer of 5nm-thick TiO2 between Ti and…”
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    Journal Article
  5. 5
  6. 6

    Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures by Jiang, Ran, Han, Zuyin, Sun, Weideng, Du, Xianghao, Wu, Zhengran, Jung, Hyung-Suk

    Published in Applied physics letters (12-10-2015)
    “…Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors…”
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    Journal Article
  7. 7

    Strong photoluminescence of the porous silicon with HfO2-filled microcavities by Jiang, Ran, Wu, Zhengran, Du, Xianghao, Han, Zuyin, Sun, Weideng

    Published in Applied physics letters (22-06-2015)
    “…Greatly enhanced blue emission was observed at room temperature in the single-crystal silicon with HfO2 filled into its microcavities. The broad blue band…”
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    Journal Article
  8. 8

    RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities by Jiang, Ran, Du, Xianghao, Sun, Weideng, Han, Zuyin, Wu, Zhengran

    Published in Scientific reports (27-10-2015)
    “…With HfO 2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one…”
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    Journal Article
  9. 9

    Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities by Jiang, Ran, Du, Xianghao, Sun, Weideng, Han, Zuyin, Wu, Zhengran

    Published in Scientific reports (27-10-2015)
    “…With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand,…”
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    Journal Article
  10. 10

    Strong photoluminescence of the porous silicon with HfO{sub 2}-filled microcavities by Jiang, Ran, Wu, Zhengran, Du, Xianghao, Han, Zuyin, Sun, Weideng

    Published in Applied physics letters (22-06-2015)
    “…Greatly enhanced blue emission was observed at room temperature in the single-crystal silicon with HfO{sub 2} filled into its microcavities. The broad blue…”
    Get full text
    Journal Article
  11. 11

    Investigation of chemical distribution in the oxide bulk layer in Ti/HfO{sub 2}/Pt memory devices using x-ray photoelectron spectroscopy by Jiang, Ran, Du, Xianghao, Han, Zuyin, Sun, Weideng

    Published in Applied physics letters (27-04-2015)
    “…Resistive switching (RS) of Ti/HfO{sub 2}/Pt memory devices was studied using X-ray photoelectron spectroscopy. Hf{sup 4+} monotonously decreases with depth…”
    Get full text
    Journal Article
  12. 12
  13. 13

    Habituation/Fatigue behavior of a synapse memristor based on IGZO-HfO 2 thin film by Jiang, Ran, Ma, Pengfei, Han, Zuyin, Du, Xianghao

    Published in Scientific reports (24-08-2017)
    “…A synaptic memristor based on IGZO and oxygen-deficient HfO films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of…”
    Get full text
    Journal Article