Search Results - "Du, FangZhou"
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Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
Published in Applied physics letters (15-07-2024)“…This work demonstrates a high-performance monolithically integrated GaN inverters platform, which incorporates enhancement-mode (E-mode) and depletion-mode…”
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High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique
Published in Applied physics letters (23-09-2024)“…This study presents a β-Ga2O3 Schottky barrier diode (SBD) with a Mg current blocking layer (Mg-CBL) fabricated via the Mg-doped spin-on-glass (Mg-SOG)…”
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3
Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
Published in Applied physics letters (10-06-2024)“…In this work, high threshold voltage and breakdown voltage E-mode GaN HEMTs using an Al:HfOx-based charge trapping layer (CTL) are presented. The developed GaN…”
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Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance
Published in Applied physics letters (21-11-2022)“…In this work, we use Si/Tl5Al1/TiN for a source/drain ohmic contact to demonstrate an ultra-low contact resistance of 0.11 Ω mm (ρc = 2.62 × 10−7 Ω cm2) on…”
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Ingredients in Zijuan Pu'er Tea Extract Alleviate β-Amyloid Peptide Toxicity in a Caenorhabditis elegans Model of Alzheimer's Disease Likely through DAF-16
Published in Molecules (Basel, Switzerland) (18-02-2019)“…Amyloid-β, one of the hallmarks of Alzheimer's disease (AD), is toxic to neurons and can also cause brain cell death. Oxidative stress is known to play an…”
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Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance
Published in Applied physics letters (04-09-2023)“…This work adopts interface charge engineering to fabricate normally off metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) on an in…”
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Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity
Published in Applied physics letters (28-08-2023)“…In this work, the carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN with a very low specific contact resistivity of 1.98 × 10−5 Ω cm2 is…”
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8
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
Published in Applied physics letters (25-03-2024)“…This work develops a regrown fishbone trench (RFT) structure in selective area growth (SAG) technique to fabricate recessed-gate normally off GaN…”
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9
Characterization of mixed-culture biofilms established in microbial fuel cells
Published in Biomass & bioenergy (01-11-2012)“…For the successful operation of a microbial fuel cell, it is important to characterize the biofilm on the anode. The behavior of MFCs during initial biofilm…”
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Microbial fuel cell as power supply for implantable medical devices: A novel configuration design for simulating colonic environment
Published in Biosensors & bioelectronics (15-03-2013)“…This study focused on providing power for implantable medical devices (IMDs) using a microbial fuel cell (MFC) implanted in human transverse colon. Considering…”
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11
Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures
Published in Micromachines (Basel) (27-01-2024)“…The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO ) exhibits a remarkably high electromechanical coupling coefficient and minimal…”
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12
Continuous flowing membraneless microbial fuel cells with separated electrode chambers
Published in Bioresource technology (01-10-2011)“…► We designed a new membraneless microbial fuel cell structure and operation model to lower the cost. ► Protons in this model transfer via electrolyte flow,…”
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Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate
Published in Crystals (Basel) (01-01-2023)“…In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure…”
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14
Adipose-Derived Stem-Cell-Membrane-Coated PLGA-PEI Nanoparticles Promote Wound Healing via Efficient Delivery of miR-21
Published in Pharmaceutics (01-09-2024)“…miRNAs have been shown to be involved in the regulation of a variety of physiological and pathological processes, but their use in the treatment of diseases is…”
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Artificial Intelligence Algorithms Enable Automated Characterization of the Positive and Negative Dielectrophoretic Ranges of Applied Frequency
Published in Micromachines (Basel) (28-02-2022)“…The present work describes the phenomenological approach to automatically determine the frequency range for positive and negative dielectrophoresis (DEP)-an…”
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Novel pneumatically assisted atomization device for living cell delivery: application of sprayed mesenchymal stem cells for skin regeneration
Published in Bio-design and manufacturing (2022)“…Large cutaneous wounds pose a severe medical problem and may be deadly in cases when regeneration is impaired. Recently, topical stem cell therapy has been…”
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Electricity generation directly using human feces wastewater for life support system
Published in Acta astronautica (01-05-2011)“…Wastewater reuse and power regeneration are key issues in the research of bioregeneration life support system (BLSS). Microbial fuel cell (MFC) can generate…”
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Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
Published in Nanomaterials (Basel, Switzerland) (10-09-2024)“…In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were…”
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Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors
Published in IEEE journal of the Electron Devices Society (2024)“…This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N 2 and N 2 O…”
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The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure
Published in Crystals (Basel) (19-05-2022)“…This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various…”
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