Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers

Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers

We report on a high resolution X-ray diffraction analysis of three antimonide-based mid-infrared laser samples (designed for optical pumping) with an active type-II structure. The deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth Vol. 257; no. 1-2; pp. 42 - 50
Main Authors: Hoffmann, G., Schimper, H.J., Schwender, C., Herhammer, N., West, G.F., Vogelgesang, B., Drumm, J.O., Fouckhardt, H., Scheib, M.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-09-2003
Elsevier
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Stoichiometry
Gallium antimonides
High energy electron diffraction
Indium antimonides
Non radiative recombination
Optical pumping
XRD
Experimental study
Lattice parameters
Indium arsenides
Semiconductor lasers
Infrared laser
Molecular beam epitaxy
Quantum well lasers
Chemical composition
Aluminium antimonides
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on a high resolution X-ray diffraction analysis of three antimonide-based mid-infrared laser samples (designed for optical pumping) with an active type-II structure. The deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and asymmetrical strain. Layer compositions are determined and layer sequences are examined accurately also considering the results of reflective high-energy electron diffraction studies during growth. Layer thicknesses and strain values of the type-II structure quantum wells as well as stoichiometry of the mixed anion interfaces are extracted. By designing the antimonide-to-arsenide interfaces in sample II, we achieved exact lattice matching of the active region to the substrate. Based on the knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time resolved photoluminescence as well as laser properties under optically pumped laser operation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(03)01387-3