Search Results - "Druilhe, R."

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  1. 1

    Influence of a ZnMnTe buffer layer on the growth of ZnTe on (0 0 1)GaAs by MOVPE by Zozime, A, Seibt, M, Ertel, J, Tromson-Carli, A, Druilhe, R, Grattepain, C, Triboulet, R

    Published in Journal of crystal growth (01-02-2003)
    “…ZnTe epilayers have been grown on (0 0 1) GaAs after depositing a Zn 0.9Mn 0.1Te (ZMT) buffer layer. This layer has a sphalerite structure and is (1 1 1)…”
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    Journal Article
  2. 2

    Analysis of the CVD in a horizontal reactor. II. The epitaxy of CdTe by Kuhn, W.S., Angermeier, D., Druilhe, R., Gebhardt, W., Triboulet, R.

    Published in Journal of crystal growth (01-02-1998)
    “…We studied the growth of CdTe on (1 0 0)Si substrates covered with a ZnTe Ge buffer layer. The growth was performed in a horizontal quartz reactor and…”
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    Journal Article
  3. 3

    Hydrogen-arsenic interactions in MOVPE-grown CdTe: effects of rapid thermal annealing by Svob, L., Marfaing, Y., Clerjaud, B., Côte, D., Lebkiri, A., Druilhe, R.

    Published in Journal of crystal growth (01-02-1996)
    “…Short thermal treatments (5 and 30 s) have been performed on MOVPE grown CdTe layers doped with arsenic in the concentration range 8 × 1016 to 7 × 1018cm−3. In…”
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    Journal Article Conference Proceeding
  4. 4

    Analysis of the CVD in a horizontal reactor. I. The epitaxy of Ge by Kuhn, W.S., Angermeier, D., Druilhe, R., Gebhardt, W., Triboulet, R.

    Published in Journal of crystal growth (01-02-1998)
    “…We studied the growth of Ge on (1 0 0)Si substrates in a horizontal quartz reactor. GeH 4 was employed as precursor in 1 atm H 2 carrier gas. The growth rates…”
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    Journal Article
  5. 5

    Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs by Tromson-Carli, A., Zozime, A., Ertel, J., Seibt, M., Druilhe, R., Grattepain, C., Triboulet, R.

    Published in Journal of crystal growth (01-01-1997)
    “…The improvement of a ZnTe surface layer quality is reported. For the first time a ZnTe layer of (111) orientation has been grown on (100) GaAs substrate. This…”
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    Journal Article Conference Proceeding
  6. 6

    Twin-free CdHgTe layers grown by MOCVD on vicinal (211) GaAs surfaces by Tromson-Carli, A., Girard-François, A., Druilhe, R., Grattepain, C., Triboulet, R.

    Published in Materials letters (01-04-1995)
    “…Following a study on the morphological and structural properties of CdTe and CdZnTe layers grown by MOCVD on GaAs substrates of (h11) orientation and A or B…”
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    Journal Article
  7. 7

    Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation by Tromson-Carli, A., Svob, L., Marfaing, Y., Druilhe, R., Desjonqueres, F., Triboulet, R.

    “…X-ray double diffraction and photoluminescence experiments were performed on a series of CdTe layers grown by MOVPE on CdTe, CdZnTe and GaAs substrates. Some…”
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    Journal Article
  8. 8