Search Results - "Drozdov, Yu. N"

Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates by Drozdov, Yu. N., Kraev, S. A., Okhapkin, A. I., Daniltsev, V. M., Skorokhodov, E. V.

“…The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are…”
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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS by Orlov, L. K., Vdovin, V. I., Drozdov, Yu. N., Orlov, M. L., Ivina, N. L., Steinman, E. A.

“…The work discusses mechanisms of formation, crystal structure, some features of defect formation, and composition of the solid carbide film formed from a…”
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Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut by Drozdov, Yu. N., Khrikin, O. I., Yunin, P. A.

“…The deformation of a (0001)GaN epitaxial layer on the (11 0) sapphire a -cut is studied by X-ray diffractometry. Anisotropic-layer deformation is calculated by…”
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Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire by Yunin, P. A., Drozdov, Yu. N., Khrykin, O. I., Grigoryev, V. A.

“…The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a -plane (11 0) sapphire substrates are…”
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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials by Drozdov, M. N., Drozdov, Yu. N., Okhapkin, A. I., Kraev, S. A., Lobaev, M. V.

“…New possibilities offered by the method of secondary ion mass spectrometry (SIMS) for analysis of the phase composition of carbon-containing materials are…”
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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry by Drozdov, M. N., Drozdov, Yu. N., Lobaev, M. A., Yunin, P. A.

“…A new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary- ion mass spectrometers with time-of-flight mass…”
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Study of the Structural and Morphological Properties of HPHT Diamond Substrates by Yunin, P. A., Volkov, P. V., Drozdov, Yu. N., Koliadin, A. V., Korolev, S. A., Radischev, D. B., Surovegina, E. A., Shashkin, V. I.

“…The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied…”
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Characterization of the cleaved edge cross section of the heterostructures with GaMnAs layer by the confocal micro-Raman spectroscopy by Kudrin, A.V., Plankina, S.M., Vikhrova, O.V., Nezhdanov, A.V., Mashin, A.I., Drozdov, Yu.N., Shvetsov, A.V.

“…•The cross section of sub-micron thick heterostructures was investigated by the micro-Raman spectroscopy (MRS).•The shift of a TO mode position in top GaMnAs…”
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Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers by Drozdov, M. N., Demidov, E. V., Drozdov, Yu. N., Kraev, S. A., Shashkin, V. I., Arkhipova, E. A., Lobaev, M. A., Vikharev, A. L., Gorbachev, A. M., Radishchev, D. B., Isaev, V. A., Bogdanov, S. A.

“…The formation of Au/Mo/Ti ohmic contacts to p -diamond epitaxial films has been studied. Specifically, the influence of annealing on the electrical properties…”
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Grazing Incidence X-Ray Diffraction Study of Tantalum Thin Films by Yunin, P. A., Drozdov, Yu. N., Gusev, N. S.

“…The features of the analysis of thin films by small-angle X-ray reflectometry and grazing incidence X-ray diffractometry are considered by the example of…”
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The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond by Drozdov, M. N., Arkhipova, E. A., Drozdov, Yu. N., Kraev, S. A., Shashkin, V. I., Parafin, A. E., Lobaev, M. A., Vikharev, A. L., Gorbachev, A. M., Radishchev, D. B., Isaev, V. A., Bogdanov, S. A.

“…— The influence of pulsed laser annealing on the formation of ohmic molybdenum /titanium contacts to the diamond has been studied. Using the method of…”
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Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates by Yunin, P. A., Drozdov, Yu. N., Chernov, V. V., Isaev, V. A., Bogdanov, S. A., Muchnikov, A. B.

“…Methods of the experimental diagnostics and control of the misorientation angle for single-crystal HPHT (High Pressure High Temperature) diamond substrates are…”
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Evidences for direct magnetic patterning via diffusive transformations using femtosecond laser interferometry by Polushkin, N. I., Oliveira, V., Conde, O., Vilar, R., Drozdov, Yu. N., Apolinário, A., García-García, A., Teixeira, J. M., Kakazei, G. N.

“…The application of femtosecond laser interferometry to direct patterning of thin-film magnetic alloys is demonstrated. The formation of stripe gratings with…”
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A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam by Drozdov, M. N., Drozdov, Yu. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V.

“…New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry…”
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Peculiarities in magnetron sputtering of YBCO epitaxial films for applications in superconductor electronics devices by Drozdov, Yu. N., Masterov, D. V., Pavlov, S. A., Parafin, A. E., Yunin, P. A.

“…We consider the main factors determining the growth of YBa 2 Cu 3 O 7–δ high- T c superconductor films during magnetron sputtering in the planar axial…”
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Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry by Drozdov, M. N., Danil’tsev, V. M., Drozdov, Yu. N., Khrykin, O. I., Yunin, P. A.

“…New possibilities of the method of secondary ion mass spectrometry (SIMS) in application to quantitative analysis of the atomic composition of InGaAs…”
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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source by Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., Kraev, S. A., Surovegina, E. A., Shashkin, V. I., Yunin, P. A.

“…The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source…”
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Investigation of X-ray diffraction limitations upon the analysis of tellurium-atom injection into GaAs epitaxial layers by Drozdov, Yu. N., Danil’tsev, V. M., Drozdov, M. N., Yunin, P. A., Demidov, E. V., Folomin, P. I., Gritsenko, A. B., Korolev, S. A., Surovegina, E. A.

“…GaAs lattice “superdilation” caused by an introduced tellurium impurity, which is well known in publications, is experimentally studied. This phenomenon…”
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Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry by Drozdov, M. N., Drozdov, Yu. N., Yunin, P. A., Folomin, P. I., Gritsenko, A. B., Kryukov, V. L., Kryukov, E. V.

“…A new opportunity to analyze the atomic composition of thick (>100 μm) epitaxial GaAs layers by SIMS with lateral imaging of the cross section of a structure…”
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Prototypes of photovoltaic cells based on subphthalocyanine with a lower buffer layer by Pakhomov, G. L., Travkin, V. V., Tropanova, A. N., Gudkov, E. Yu, Drozdov, Yu. N.

“…Prototype organic photovoltaic cells containing a planar subphthalocyanine/fullerene heterojunction are fabricated. Their current-voltage characteristics are…”
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