Search Results - "Drozdov, N"

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions by Lobaev, Mikhail A., Gorbachev, Alexei M., Bogdanov, Sergey A., Vikharev, Anatoly L., Radishev, Dmitry B., Isaev, Vladimir A., Drozdov, Mikhail N.

“…The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the…”
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Decomposition of ultrathin LiF cathode underlayer in organic-based devices evidenced by ToF-SIMS depth profiling by Pakhomov, Georgy L., Drozdov, Mikhail N., Travkin, Vlad V., Bochkarev, Mikhail N.

“…•Chemical composition of the multilayer organic-based devices incorporating an ultrathin LiF cathode underlayer was analyzed using the time-of-flight secondary…”
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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability by Karaeva, M E, Savinykh, D O, Orlova, A I, Nokhrin, A V, Boldin, M S, Murashov, A A, Chuvil'deev, V N, Skuratov, V A, Issatov, A T, Yunin, P A, Nazarov, A A, Drozdov, M N, Potanina, E A, Tabachkova, N Y

“…This paper introduces the results of hydrolytic stability tests and radiation resistance tests of phosphate molybdates and phosphate tungstates Na Zr (PO ) (XO…”
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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers by Yunin, P.A., Drozdov, Yu.N., Drozdov, M.N., Khrykin, O.I., Shashkin, V.I.

“…The possibilities of quantitative secondary ion mass spectrometry (SIMS) depth profiling of Al in AlxGa1 − xN/AlN/GaN transistor heterostructures are shown…”
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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials by Drozdov, M. N., Drozdov, Yu. N., Okhapkin, A. I., Kraev, S. A., Lobaev, M. V.

“…New possibilities offered by the method of secondary ion mass spectrometry (SIMS) for analysis of the phase composition of carbon-containing materials are…”
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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry by Drozdov, M. N., Drozdov, Yu. N., Lobaev, M. A., Yunin, P. A.

“…A new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary- ion mass spectrometers with time-of-flight mass…”
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Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers by Drozdov, M. N., Demidov, E. V., Drozdov, Yu. N., Kraev, S. A., Shashkin, V. I., Arkhipova, E. A., Lobaev, M. A., Vikharev, A. L., Gorbachev, A. M., Radishchev, D. B., Isaev, V. A., Bogdanov, S. A.

“…The formation of Au/Mo/Ti ohmic contacts to p -diamond epitaxial films has been studied. Specifically, the influence of annealing on the electrical properties…”
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The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond by Drozdov, M. N., Arkhipova, E. A., Drozdov, Yu. N., Kraev, S. A., Shashkin, V. I., Parafin, A. E., Lobaev, M. A., Vikharev, A. L., Gorbachev, A. M., Radishchev, D. B., Isaev, V. A., Bogdanov, S. A.

“…— The influence of pulsed laser annealing on the formation of ohmic molybdenum /titanium contacts to the diamond has been studied. Using the method of…”
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Novel microwave plasma-assisted CVD reactor for diamond delta doping by Vikharev, A. L., Gorbachev, A. M., Lobaev, M. A., Muchnikov, A. B., Radishev, D. B., Isaev, V. A., Chernov, V. V., Bogdanov, S. A., Drozdov, M. N., Butler, J. E.

“…We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas…”
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Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates by Drozdov, Yu. N., Kraev, S. A., Okhapkin, A. I., Daniltsev, V. M., Skorokhodov, E. V.

“…The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are…”
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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry by Drozdov, M.N., Drozdov, Y.N., Csik, A., Novikov, A.V., Vad, K., Yunin, P.A., Yurasov, D.V., Belykh, S.F., Gololobov, G.P., Suvorov, D.V., Tolstogouzov, A.

“…Quantification of Ge in Si1–xGex structures (0.092≤x≤0.78) was carried out by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas…”
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SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States by Drozdov, M. N., Drozdov, Yu. N., Okhapkin, A. I., Yunin, P. A., Streletskii, O. A., Ieshkin, A. E.

“…We have studied a new approach to the analysis of carbon-containing materials by secondary ion mass spectrometry (SIMS), which allows determining the contents…”
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Prognostic value of proadrenomedullin in patients with COVID-19 pneumonia by Astapovskii, Aleksandr A., Drozdov, Vladimir N., Shikh, Evgenia V., Melkonyan, George G., Sizova, Zhanna M., Zakharova, Valeria L., Shindryaeva, Natalia N., Lapidus, Natalia I.

“…Objective The aim of the study was to assess the role of mid-regional proadrenomedullin (MR-proADM) in comparison with routine laboratory tests in patients…”
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A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam by Drozdov, M. N., Drozdov, Yu. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V.

“…New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry…”
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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS by Orlov, L. K., Vdovin, V. I., Drozdov, Yu. N., Orlov, M. L., Ivina, N. L., Steinman, E. A.

“…The work discusses mechanisms of formation, crystal structure, some features of defect formation, and composition of the solid carbide film formed from a…”
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Improving the Operation of Pump-ejector Systems at Varying Flow Rates of Associated Petroleum Gas by Drozdov, A. N., Gorbyleva, Ya. A.

“…Application of pump-ejector systems for the utilization of associated petroleum gas reduces the negative environmental impact of its flaring, and also allows…”
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Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films by Yunin, P. A., Okhapkin, A. I., Drozdov, M. N., Korolev, S. A., Arkhipova, E. A., Kraev, S. A., Drozdov, Yu. N., Shashkin, V. I., Radishev, D. B.

“…It is known that diamond-like carbon layers consist of carbon components with sp 2 (graphite) and sp 3 (diamond) hybridizations of electron orbitals. The…”
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Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide by Okhapkin, A. I., Kraev, S. A., Arkhipova, E. A., Daniltsev, V. M., Khrykin, O. I., Yunin, P. A., Drozdov, M. N.

“…In this study, the dependence of the plasma-chemical-etching rate and the surface roughness of a gallium-arsenide crater on the concentration of…”
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Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut by Drozdov, Yu. N., Khrikin, O. I., Yunin, P. A.

“…The deformation of a (0001)GaN epitaxial layer on the (11 0) sapphire a -cut is studied by X-ray diffractometry. Anisotropic-layer deformation is calculated by…”
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Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry by Drozdov, M. N., Danil’tsev, V. M., Drozdov, Yu. N., Khrykin, O. I., Yunin, P. A.

“…New possibilities of the method of secondary ion mass spectrometry (SIMS) in application to quantitative analysis of the atomic composition of InGaAs…”
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